Characteristics of vertical type polymer light emitting transistor using dimethyldicyanoquinonediimine as a N-type buffer layer

Hyun Sik Min; Jong Wook Park; Jeong Ho Cho; Se Young Oh

doi:10.1166/jnn.2014.8462

Characteristics of vertical type polymer light emitting transistor using dimethyldicyanoquinonediimine as a N-type buffer layer

Hyun Sik Min, Jong Wook Park, Jeong Ho Cho, Se Young Oh

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Contact resistance between a metal electrode and an organic active layer is one of the most critical issues in the research and development of organic electronic devices. In the present work, we have fabricated vertical type organic light emitting transistor (OLET) using P3HT as a organic active semiconductor and DMDCNQI as a charge transfer material. The device configuration is ITO/PEDOT:PSS/P3HT/Al gate/P3HT/DMDCNQI/Al. The characteristics of OLET were investigated from the measurement of current-radiance voltage characteristics The needle form of highly conducting DMDCNQI-Al charge transfer complex was obtained, which resulted in the improvement of device performance due to the low organic-metal contact resistance and the high electron transport ability.

Original language	English
Pages (from-to)	6314-6317
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	14
Issue number	8
DOIs	https://doi.org/10.1166/jnn.2014.8462
Publication status	Published - 2014 Aug

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

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title = "Characteristics of vertical type polymer light emitting transistor using dimethyldicyanoquinonediimine as a N-type buffer layer",

abstract = "Contact resistance between a metal electrode and an organic active layer is one of the most critical issues in the research and development of organic electronic devices. In the present work, we have fabricated vertical type organic light emitting transistor (OLET) using P3HT as a organic active semiconductor and DMDCNQI as a charge transfer material. The device configuration is ITO/PEDOT:PSS/P3HT/Al gate/P3HT/DMDCNQI/Al. The characteristics of OLET were investigated from the measurement of current-radiance voltage characteristics The needle form of highly conducting DMDCNQI-Al charge transfer complex was obtained, which resulted in the improvement of device performance due to the low organic-metal contact resistance and the high electron transport ability.",

author = "Min, {Hyun Sik} and Park, {Jong Wook} and Cho, {Jeong Ho} and Oh, {Se Young}",

year = "2014",

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T1 - Characteristics of vertical type polymer light emitting transistor using dimethyldicyanoquinonediimine as a N-type buffer layer

AU - Min, Hyun Sik

AU - Park, Jong Wook

AU - Cho, Jeong Ho

AU - Oh, Se Young

PY - 2014/8

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N2 - Contact resistance between a metal electrode and an organic active layer is one of the most critical issues in the research and development of organic electronic devices. In the present work, we have fabricated vertical type organic light emitting transistor (OLET) using P3HT as a organic active semiconductor and DMDCNQI as a charge transfer material. The device configuration is ITO/PEDOT:PSS/P3HT/Al gate/P3HT/DMDCNQI/Al. The characteristics of OLET were investigated from the measurement of current-radiance voltage characteristics The needle form of highly conducting DMDCNQI-Al charge transfer complex was obtained, which resulted in the improvement of device performance due to the low organic-metal contact resistance and the high electron transport ability.

AB - Contact resistance between a metal electrode and an organic active layer is one of the most critical issues in the research and development of organic electronic devices. In the present work, we have fabricated vertical type organic light emitting transistor (OLET) using P3HT as a organic active semiconductor and DMDCNQI as a charge transfer material. The device configuration is ITO/PEDOT:PSS/P3HT/Al gate/P3HT/DMDCNQI/Al. The characteristics of OLET were investigated from the measurement of current-radiance voltage characteristics The needle form of highly conducting DMDCNQI-Al charge transfer complex was obtained, which resulted in the improvement of device performance due to the low organic-metal contact resistance and the high electron transport ability.

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Characteristics of vertical type polymer light emitting transistor using dimethyldicyanoquinonediimine as a N-type buffer layer

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