Characteristics of vertical type polymer light emitting transistor using dimethyldicyanoquinonediimine as a N-type buffer layer

Hyun Sik Min, Jong Wook Park, Jeong Ho Cho, Se Young Oh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Contact resistance between a metal electrode and an organic active layer is one of the most critical issues in the research and development of organic electronic devices. In the present work, we have fabricated vertical type organic light emitting transistor (OLET) using P3HT as a organic active semiconductor and DMDCNQI as a charge transfer material. The device configuration is ITO/PEDOT:PSS/P3HT/Al gate/P3HT/DMDCNQI/Al. The characteristics of OLET were investigated from the measurement of current-radiance voltage characteristics The needle form of highly conducting DMDCNQI-Al charge transfer complex was obtained, which resulted in the improvement of device performance due to the low organic-metal contact resistance and the high electron transport ability.

Original languageEnglish
Pages (from-to)6314-6317
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume14
Issue number8
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Contact resistance
Buffer layers
Charge transfer
Polymers
Transistors
transistors
buffers
Metals
contact resistance
polymers
charge transfer
Needles
Semiconductor materials
research and development
ITO (semiconductors)
radiance
needles
metals
Electrodes
Electric potential

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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abstract = "Contact resistance between a metal electrode and an organic active layer is one of the most critical issues in the research and development of organic electronic devices. In the present work, we have fabricated vertical type organic light emitting transistor (OLET) using P3HT as a organic active semiconductor and DMDCNQI as a charge transfer material. The device configuration is ITO/PEDOT:PSS/P3HT/Al gate/P3HT/DMDCNQI/Al. The characteristics of OLET were investigated from the measurement of current-radiance voltage characteristics The needle form of highly conducting DMDCNQI-Al charge transfer complex was obtained, which resulted in the improvement of device performance due to the low organic-metal contact resistance and the high electron transport ability.",
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Characteristics of vertical type polymer light emitting transistor using dimethyldicyanoquinonediimine as a N-type buffer layer. / Min, Hyun Sik; Park, Jong Wook; Cho, Jeong Ho; Oh, Se Young.

In: Journal of Nanoscience and Nanotechnology, Vol. 14, No. 8, 01.01.2014, p. 6314-6317.

Research output: Contribution to journalArticle

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