Abstract
Contact resistance between a metal electrode and an organic active layer is one of the most critical issues in the research and development of organic electronic devices. In the present work, we have fabricated vertical type organic light emitting transistor (OLET) using P3HT as a organic active semiconductor and DMDCNQI as a charge transfer material. The device configuration is ITO/PEDOT:PSS/P3HT/Al gate/P3HT/DMDCNQI/Al. The characteristics of OLET were investigated from the measurement of current-radiance voltage characteristics The needle form of highly conducting DMDCNQI-Al charge transfer complex was obtained, which resulted in the improvement of device performance due to the low organic-metal contact resistance and the high electron transport ability.
| Original language | English |
|---|---|
| Pages (from-to) | 6314-6317 |
| Number of pages | 4 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 14 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics
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Characteristics of vertical type polymer light emitting transistor using dimethyldicyanoquinonediimine as a N-type buffer layer. / Min, Hyun Sik; Park, Jong Wook; Cho, Jeong Ho; Oh, Se Young.
In: Journal of Nanoscience and Nanotechnology, Vol. 14, No. 8, 01.01.2014, p. 6314-6317.Research output: Contribution to journal › Article
TY - JOUR
T1 - Characteristics of vertical type polymer light emitting transistor using dimethyldicyanoquinonediimine as a N-type buffer layer
AU - Min, Hyun Sik
AU - Park, Jong Wook
AU - Cho, Jeong Ho
AU - Oh, Se Young
PY - 2014/1/1
Y1 - 2014/1/1
N2 - Contact resistance between a metal electrode and an organic active layer is one of the most critical issues in the research and development of organic electronic devices. In the present work, we have fabricated vertical type organic light emitting transistor (OLET) using P3HT as a organic active semiconductor and DMDCNQI as a charge transfer material. The device configuration is ITO/PEDOT:PSS/P3HT/Al gate/P3HT/DMDCNQI/Al. The characteristics of OLET were investigated from the measurement of current-radiance voltage characteristics The needle form of highly conducting DMDCNQI-Al charge transfer complex was obtained, which resulted in the improvement of device performance due to the low organic-metal contact resistance and the high electron transport ability.
AB - Contact resistance between a metal electrode and an organic active layer is one of the most critical issues in the research and development of organic electronic devices. In the present work, we have fabricated vertical type organic light emitting transistor (OLET) using P3HT as a organic active semiconductor and DMDCNQI as a charge transfer material. The device configuration is ITO/PEDOT:PSS/P3HT/Al gate/P3HT/DMDCNQI/Al. The characteristics of OLET were investigated from the measurement of current-radiance voltage characteristics The needle form of highly conducting DMDCNQI-Al charge transfer complex was obtained, which resulted in the improvement of device performance due to the low organic-metal contact resistance and the high electron transport ability.
UR - http://www.scopus.com/inward/record.url?scp=84906568868&partnerID=8YFLogxK
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U2 - 10.1166/jnn.2014.8462
DO - 10.1166/jnn.2014.8462
M3 - Article
VL - 14
SP - 6314
EP - 6317
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 8
ER -