Characteristics of Y2O3 films on Si(100) by ionized cluster beam deposition

M. H. Cho, S. W. Whangbo, C. N. Whang, S. C. Choi, S. B. Kang, S. I. Lee, M. Y. Lee

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

In this study, the Y2O3 films on p-type Si(100) have been fabricated by UHV reactive ionized cluster beam deposition (r-ICB) systems. The crystallinity of the films was investigated by glancing X-ray diffraction (GXRD) and in-situ reflection of high energy electron diffraction (RHEED) analyses. The results show that the preferentially oriented crystallinity of the films was increased with acceleration voltages as well as substrate temperatures. Especially, at the substrate temperature of 700 °C and the acceleration voltage of 5 kV, the Y2O3 films grow epitaxially in direction of Y2O3 (110)//Si(100). The characteristics of Al/Y2O3/Si MIS structure were obtained by C-V, and I-V measurements. The breakdown field strength of the epitaxially grown films increases up to 2 MV/cm without any interface silicon oxide layer, and the dielectric constant is found to be ε = 15.6. these results demonstrated that the yttrium oxide films have potential application to the gate insulator of the future VLSI/ULSI devices.

Original languageEnglish
Pages (from-to)345-349
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume477
Publication statusPublished - 1997 Dec 1
EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1997 Mar 31 → …

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crystallinity
High energy electron diffraction
yttrium oxides
Yttrium oxide
Management information systems
Silicon oxides
Electric potential
electric potential
very large scale integration
MIS (semiconductors)
Substrates
silicon oxides
high energy electrons
Oxide films
oxide films
field strength
Permittivity
electron diffraction
breakdown
insulators

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Cho, M. H., Whangbo, S. W., Whang, C. N., Choi, S. C., Kang, S. B., Lee, S. I., & Lee, M. Y. (1997). Characteristics of Y2O3 films on Si(100) by ionized cluster beam deposition. Materials Research Society Symposium - Proceedings, 477, 345-349.
Cho, M. H. ; Whangbo, S. W. ; Whang, C. N. ; Choi, S. C. ; Kang, S. B. ; Lee, S. I. ; Lee, M. Y. / Characteristics of Y2O3 films on Si(100) by ionized cluster beam deposition. In: Materials Research Society Symposium - Proceedings. 1997 ; Vol. 477. pp. 345-349.
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abstract = "In this study, the Y2O3 films on p-type Si(100) have been fabricated by UHV reactive ionized cluster beam deposition (r-ICB) systems. The crystallinity of the films was investigated by glancing X-ray diffraction (GXRD) and in-situ reflection of high energy electron diffraction (RHEED) analyses. The results show that the preferentially oriented crystallinity of the films was increased with acceleration voltages as well as substrate temperatures. Especially, at the substrate temperature of 700 °C and the acceleration voltage of 5 kV, the Y2O3 films grow epitaxially in direction of Y2O3 (110)//Si(100). The characteristics of Al/Y2O3/Si MIS structure were obtained by C-V, and I-V measurements. The breakdown field strength of the epitaxially grown films increases up to 2 MV/cm without any interface silicon oxide layer, and the dielectric constant is found to be ε = 15.6. these results demonstrated that the yttrium oxide films have potential application to the gate insulator of the future VLSI/ULSI devices.",
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Cho, MH, Whangbo, SW, Whang, CN, Choi, SC, Kang, SB, Lee, SI & Lee, MY 1997, 'Characteristics of Y2O3 films on Si(100) by ionized cluster beam deposition', Materials Research Society Symposium - Proceedings, vol. 477, pp. 345-349.

Characteristics of Y2O3 films on Si(100) by ionized cluster beam deposition. / Cho, M. H.; Whangbo, S. W.; Whang, C. N.; Choi, S. C.; Kang, S. B.; Lee, S. I.; Lee, M. Y.

In: Materials Research Society Symposium - Proceedings, Vol. 477, 01.12.1997, p. 345-349.

Research output: Contribution to journalConference article

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AU - Cho, M. H.

AU - Whangbo, S. W.

AU - Whang, C. N.

AU - Choi, S. C.

AU - Kang, S. B.

AU - Lee, S. I.

AU - Lee, M. Y.

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Y1 - 1997/12/1

N2 - In this study, the Y2O3 films on p-type Si(100) have been fabricated by UHV reactive ionized cluster beam deposition (r-ICB) systems. The crystallinity of the films was investigated by glancing X-ray diffraction (GXRD) and in-situ reflection of high energy electron diffraction (RHEED) analyses. The results show that the preferentially oriented crystallinity of the films was increased with acceleration voltages as well as substrate temperatures. Especially, at the substrate temperature of 700 °C and the acceleration voltage of 5 kV, the Y2O3 films grow epitaxially in direction of Y2O3 (110)//Si(100). The characteristics of Al/Y2O3/Si MIS structure were obtained by C-V, and I-V measurements. The breakdown field strength of the epitaxially grown films increases up to 2 MV/cm without any interface silicon oxide layer, and the dielectric constant is found to be ε = 15.6. these results demonstrated that the yttrium oxide films have potential application to the gate insulator of the future VLSI/ULSI devices.

AB - In this study, the Y2O3 films on p-type Si(100) have been fabricated by UHV reactive ionized cluster beam deposition (r-ICB) systems. The crystallinity of the films was investigated by glancing X-ray diffraction (GXRD) and in-situ reflection of high energy electron diffraction (RHEED) analyses. The results show that the preferentially oriented crystallinity of the films was increased with acceleration voltages as well as substrate temperatures. Especially, at the substrate temperature of 700 °C and the acceleration voltage of 5 kV, the Y2O3 films grow epitaxially in direction of Y2O3 (110)//Si(100). The characteristics of Al/Y2O3/Si MIS structure were obtained by C-V, and I-V measurements. The breakdown field strength of the epitaxially grown films increases up to 2 MV/cm without any interface silicon oxide layer, and the dielectric constant is found to be ε = 15.6. these results demonstrated that the yttrium oxide films have potential application to the gate insulator of the future VLSI/ULSI devices.

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