Characteristics of Y2O3 films on Si(100) by ionized cluster beam deposition

M. H. Cho, S. W. Whangbo, C. N. Whang, S. C. Choi, S. B. Kang, S. I. Lee, M. Y. Lee

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


In this study, the Y2O3 films on p-type Si(100) have been fabricated by UHV reactive ionized cluster beam deposition (r-ICB) systems. The crystallinity of the films was investigated by glancing X-ray diffraction (GXRD) and in-situ reflection of high energy electron diffraction (RHEED) analyses. The results show that the preferentially oriented crystallinity of the films was increased with acceleration voltages as well as substrate temperatures. Especially, at the substrate temperature of 700 °C and the acceleration voltage of 5 kV, the Y2O3 films grow epitaxially in direction of Y2O3 (110)//Si(100). The characteristics of Al/Y2O3/Si MIS structure were obtained by C-V, and I-V measurements. The breakdown field strength of the epitaxially grown films increases up to 2 MV/cm without any interface silicon oxide layer, and the dielectric constant is found to be ε = 15.6. these results demonstrated that the yttrium oxide films have potential application to the gate insulator of the future VLSI/ULSI devices.

Original languageEnglish
Pages (from-to)345-349
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1997
EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1997 Mar 31 → …

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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