Abstract
In this study, the Y2O3 films on p-type Si(100) have been fabricated by UHV reactive ionized cluster beam deposition (r-ICB) systems. The crystallinity of the films was investigated by glancing X-ray diffraction (GXRD) and in-situ reflection of high energy electron diffraction (RHEED) analyses. The results show that the preferentially oriented crystallinity of the films was increased with acceleration voltages as well as substrate temperatures. Especially, at the substrate temperature of 700 °C and the acceleration voltage of 5 kV, the Y2O3 films grow epitaxially in direction of Y2O3 (110)//Si(100). The characteristics of Al/Y2O3/Si MIS structure were obtained by C-V, and I-V measurements. The breakdown field strength of the epitaxially grown films increases up to 2 MV/cm without any interface silicon oxide layer, and the dielectric constant is found to be ε = 15.6. these results demonstrated that the yttrium oxide films have potential application to the gate insulator of the future VLSI/ULSI devices.
| Original language | English |
|---|---|
| Pages (from-to) | 345-349 |
| Number of pages | 5 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 477 |
| Publication status | Published - 1997 Dec 1 |
| Event | Proceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA Duration: 1997 Mar 31 → … |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Characteristics of Y2O3 films on Si(100) by ionized cluster beam deposition. / Cho, M. H.; Whangbo, S. W.; Whang, C. N.; Choi, S. C.; Kang, S. B.; Lee, S. I.; Lee, M. Y.
In: Materials Research Society Symposium - Proceedings, Vol. 477, 01.12.1997, p. 345-349.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Characteristics of Y2O3 films on Si(100) by ionized cluster beam deposition
AU - Cho, M. H.
AU - Whangbo, S. W.
AU - Whang, C. N.
AU - Choi, S. C.
AU - Kang, S. B.
AU - Lee, S. I.
AU - Lee, M. Y.
PY - 1997/12/1
Y1 - 1997/12/1
N2 - In this study, the Y2O3 films on p-type Si(100) have been fabricated by UHV reactive ionized cluster beam deposition (r-ICB) systems. The crystallinity of the films was investigated by glancing X-ray diffraction (GXRD) and in-situ reflection of high energy electron diffraction (RHEED) analyses. The results show that the preferentially oriented crystallinity of the films was increased with acceleration voltages as well as substrate temperatures. Especially, at the substrate temperature of 700 °C and the acceleration voltage of 5 kV, the Y2O3 films grow epitaxially in direction of Y2O3 (110)//Si(100). The characteristics of Al/Y2O3/Si MIS structure were obtained by C-V, and I-V measurements. The breakdown field strength of the epitaxially grown films increases up to 2 MV/cm without any interface silicon oxide layer, and the dielectric constant is found to be ε = 15.6. these results demonstrated that the yttrium oxide films have potential application to the gate insulator of the future VLSI/ULSI devices.
AB - In this study, the Y2O3 films on p-type Si(100) have been fabricated by UHV reactive ionized cluster beam deposition (r-ICB) systems. The crystallinity of the films was investigated by glancing X-ray diffraction (GXRD) and in-situ reflection of high energy electron diffraction (RHEED) analyses. The results show that the preferentially oriented crystallinity of the films was increased with acceleration voltages as well as substrate temperatures. Especially, at the substrate temperature of 700 °C and the acceleration voltage of 5 kV, the Y2O3 films grow epitaxially in direction of Y2O3 (110)//Si(100). The characteristics of Al/Y2O3/Si MIS structure were obtained by C-V, and I-V measurements. The breakdown field strength of the epitaxially grown films increases up to 2 MV/cm without any interface silicon oxide layer, and the dielectric constant is found to be ε = 15.6. these results demonstrated that the yttrium oxide films have potential application to the gate insulator of the future VLSI/ULSI devices.
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M3 - Conference article
AN - SCOPUS:0031347473
VL - 477
SP - 345
EP - 349
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -