Mixed thin films of ZnO and ZnS were deposited by using atomic layer deposition (ALD) to achieve film properties for active channel materials of transparent electronic devices and the characteristics of ZnO, ZnS and their mixed films with various composition ratios were examined. The chemical bond states of mixed films consisting of ZnO and ZnS phases were analyzed and no sulfate or sulfite phases were observed. The structures of the ZnO and the ZnS films exhibited wurtzite hexagonal crystalline structures. However, the mixed films did not show any specific preferred orientation; the amorphous character of the mixed films was due to the large lattice mismatch between the ZnO and the ZnS films. The ZnO thin film showed a low resistivity with a higher carrier concentration (up to ∼1019 cm-3) than the ZnS thin film which showed ∼1012 cm-3 carrier concentration. The mixed films exhibited carrier concentrations of 1015-10 18 cm-3 and a resistivity range of 102 -10 3 Ω · cm, depending on the composition. Furthermore, no significant changes in the electrical properties of the mixed films were observed with respect to the post-heat treatments.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)