p-ZnO thin film formation on Si substrate is investigated using rf magnetron sputtering followed by Zn 3 P 2 diffusion process. In order to form p-ZnO thin film, n-ZnO thin film is initially deposited on Si substrate using rf magnetron sputtering. Then, Zn 3 P 2 source diffusion by closed ampoule technique is performed on ZnO/Si test structure. The electrical and optical characteristics of the ZnO thin films are investigated and the effect of Zn 3 P 2 diffusion on the properties of ZnO thin films are examined. From the analysis results, it is verified that p-type ZnO thin film on p-Si substrate is formed by dopants diffusion.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films