Characteristics of ZnO/Si prepared by Zn 3 P 2 diffusion

Young Don Ko, Jihoun Jung, Kyu Hyun Bang, Min Chul Park, Kwang Soo Huh, Jae Min Myoung, Ilgu Yun

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

p-ZnO thin film formation on Si substrate is investigated using rf magnetron sputtering followed by Zn 3 P 2 diffusion process. In order to form p-ZnO thin film, n-ZnO thin film is initially deposited on Si substrate using rf magnetron sputtering. Then, Zn 3 P 2 source diffusion by closed ampoule technique is performed on ZnO/Si test structure. The electrical and optical characteristics of the ZnO thin films are investigated and the effect of Zn 3 P 2 diffusion on the properties of ZnO thin films are examined. From the analysis results, it is verified that p-type ZnO thin film on p-Si substrate is formed by dopants diffusion.

Original languageEnglish
Pages (from-to)266-271
Number of pages6
JournalApplied Surface Science
Volume202
Issue number3-4
DOIs
Publication statusPublished - 2002 Dec 30

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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