Characteristics of ZnO/Si prepared by Zn3P2 diffusion

Young Don Ko, Jihoun Jung, Kyu Hyun Bang, Min Chul Park, Kwang Soo Huh, Jae Min Myoung, Ilgu Yun

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

p-ZnO thin film formation on Si substrate is investigated using rf magnetron sputtering followed by Zn3P2 diffusion process. In order to form p-ZnO thin film, n-ZnO thin film is initially deposited on Si substrate using rf magnetron sputtering. Then, Zn3P2 source diffusion by closed ampoule technique is performed on ZnO/Si test structure. The electrical and optical characteristics of the ZnO thin films are investigated and the effect of Zn3P2 diffusion on the properties of ZnO thin films are examined. From the analysis results, it is verified that p-type ZnO thin film on p-Si substrate is formed by dopants diffusion.

Original languageEnglish
Pages (from-to)266-271
Number of pages6
JournalApplied Surface Science
Volume202
Issue number3-4
DOIs
Publication statusPublished - 2002 Dec 30

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Thin films
Magnetron sputtering
Substrates
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Ko, Young Don ; Jung, Jihoun ; Bang, Kyu Hyun ; Park, Min Chul ; Huh, Kwang Soo ; Myoung, Jae Min ; Yun, Ilgu. / Characteristics of ZnO/Si prepared by Zn3P2 diffusion. In: Applied Surface Science. 2002 ; Vol. 202, No. 3-4. pp. 266-271.
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Characteristics of ZnO/Si prepared by Zn3P2 diffusion. / Ko, Young Don; Jung, Jihoun; Bang, Kyu Hyun; Park, Min Chul; Huh, Kwang Soo; Myoung, Jae Min; Yun, Ilgu.

In: Applied Surface Science, Vol. 202, No. 3-4, 30.12.2002, p. 266-271.

Research output: Contribution to journalArticle

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T1 - Characteristics of ZnO/Si prepared by Zn3P2 diffusion

AU - Ko, Young Don

AU - Jung, Jihoun

AU - Bang, Kyu Hyun

AU - Park, Min Chul

AU - Huh, Kwang Soo

AU - Myoung, Jae Min

AU - Yun, Ilgu

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AB - p-ZnO thin film formation on Si substrate is investigated using rf magnetron sputtering followed by Zn3P2 diffusion process. In order to form p-ZnO thin film, n-ZnO thin film is initially deposited on Si substrate using rf magnetron sputtering. Then, Zn3P2 source diffusion by closed ampoule technique is performed on ZnO/Si test structure. The electrical and optical characteristics of the ZnO thin films are investigated and the effect of Zn3P2 diffusion on the properties of ZnO thin films are examined. From the analysis results, it is verified that p-type ZnO thin film on p-Si substrate is formed by dopants diffusion.

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