Abstract
SiOx layers were fabricated by thermal evaporation of SiO powders onto p-type Si(100) substrates at 200°C to investigate the electrical and light-emitting properties of the layers. After deposition, Ni ions of 70 keV were also implanted into SiOx layers at room temperature. Then both of the as-deposited and as-implanted samples were annealed in N2 ambient for 2 h at 500°C. Violet photoluminescence (PL) due to radiative defects was observed from all the SiOx samples but annealed ones showed more intense PL than unannealed samples. Red electroluminescence (EL) was obtained from the SiOx in metal-insulator-semiconductor (MIS) structures and the annealed SiOx layers also exhibit more intense EL than unannealed layers. Particularly, the SiOx annealed after Ni-implantation showed the most intense EL which may be caused by highly concentrated radiative defects in the implanted SiOx.
| Original language | English |
|---|---|
| Pages (from-to) | 485-489 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 398-399 |
| DOIs | |
| Publication status | Published - 2001 Nov |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Characterization and light-emitting properties of Au/SiOx/p-Si and Au/Ni-implanted-SiOx/p-Si structures. / Bae, H. S.; Lee, W. S.; Kim, T. G.; Whang, C. N.; Song, J. H.; Im, S.
In: Thin Solid Films, Vol. 398-399, 11.2001, p. 485-489.Research output: Contribution to journal › Article
TY - JOUR
T1 - Characterization and light-emitting properties of Au/SiOx/p-Si and Au/Ni-implanted-SiOx/p-Si structures
AU - Bae, H. S.
AU - Lee, W. S.
AU - Kim, T. G.
AU - Whang, C. N.
AU - Song, J. H.
AU - Im, S.
PY - 2001/11
Y1 - 2001/11
N2 - SiOx layers were fabricated by thermal evaporation of SiO powders onto p-type Si(100) substrates at 200°C to investigate the electrical and light-emitting properties of the layers. After deposition, Ni ions of 70 keV were also implanted into SiOx layers at room temperature. Then both of the as-deposited and as-implanted samples were annealed in N2 ambient for 2 h at 500°C. Violet photoluminescence (PL) due to radiative defects was observed from all the SiOx samples but annealed ones showed more intense PL than unannealed samples. Red electroluminescence (EL) was obtained from the SiOx in metal-insulator-semiconductor (MIS) structures and the annealed SiOx layers also exhibit more intense EL than unannealed layers. Particularly, the SiOx annealed after Ni-implantation showed the most intense EL which may be caused by highly concentrated radiative defects in the implanted SiOx.
AB - SiOx layers were fabricated by thermal evaporation of SiO powders onto p-type Si(100) substrates at 200°C to investigate the electrical and light-emitting properties of the layers. After deposition, Ni ions of 70 keV were also implanted into SiOx layers at room temperature. Then both of the as-deposited and as-implanted samples were annealed in N2 ambient for 2 h at 500°C. Violet photoluminescence (PL) due to radiative defects was observed from all the SiOx samples but annealed ones showed more intense PL than unannealed samples. Red electroluminescence (EL) was obtained from the SiOx in metal-insulator-semiconductor (MIS) structures and the annealed SiOx layers also exhibit more intense EL than unannealed layers. Particularly, the SiOx annealed after Ni-implantation showed the most intense EL which may be caused by highly concentrated radiative defects in the implanted SiOx.
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U2 - 10.1016/S0040-6090(01)01392-X
DO - 10.1016/S0040-6090(01)01392-X
M3 - Article
AN - SCOPUS:18344405357
VL - 398-399
SP - 485
EP - 489
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -