Characterization and light-emitting properties of Au/SiOx/p-Si and Au/Ni-implanted-SiOx/p-Si structures

H. S. Bae; W. S. Lee; T. G. Kim; C. N. Whang; J. H. Song; S. Im

doi:10.1016/S0040-6090(01)01392-X

Characterization and light-emitting properties of Au/SiO_x/p-Si and Au/Ni-implanted-SiO_x/p-Si structures

H. S. Bae, W. S. Lee, T. G. Kim, C. N. Whang, J. H. Song, S. Im

Department of Physics

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

SiO_x layers were fabricated by thermal evaporation of SiO powders onto p-type Si(100) substrates at 200°C to investigate the electrical and light-emitting properties of the layers. After deposition, Ni ions of 70 keV were also implanted into SiO_x layers at room temperature. Then both of the as-deposited and as-implanted samples were annealed in N₂ ambient for 2 h at 500°C. Violet photoluminescence (PL) due to radiative defects was observed from all the SiO_x samples but annealed ones showed more intense PL than unannealed samples. Red electroluminescence (EL) was obtained from the SiO_x in metal-insulator-semiconductor (MIS) structures and the annealed SiO_x layers also exhibit more intense EL than unannealed layers. Particularly, the SiO_x annealed after Ni-implantation showed the most intense EL which may be caused by highly concentrated radiative defects in the implanted SiO_x.

Original language	English
Pages (from-to)	485-489
Number of pages	5
Journal	Thin Solid Films
Volume	398-399
DOIs	https://doi.org/10.1016/S0040-6090(01)01392-X
Publication status	Published - 2001 Nov

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(01)01392-X

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Bae, H. S., Lee, W. S., Kim, T. G., Whang, C. N., Song, J. H., & Im, S. (2001). Characterization and light-emitting properties of Au/SiO_x/p-Si and Au/Ni-implanted-SiO_x/p-Si structures. Thin Solid Films, 398-399, 485-489. https://doi.org/10.1016/S0040-6090(01)01392-X

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title = "Characterization and light-emitting properties of Au/SiOx/p-Si and Au/Ni-implanted-SiOx/p-Si structures",

abstract = "SiOx layers were fabricated by thermal evaporation of SiO powders onto p-type Si(100) substrates at 200°C to investigate the electrical and light-emitting properties of the layers. After deposition, Ni ions of 70 keV were also implanted into SiOx layers at room temperature. Then both of the as-deposited and as-implanted samples were annealed in N2 ambient for 2 h at 500°C. Violet photoluminescence (PL) due to radiative defects was observed from all the SiOx samples but annealed ones showed more intense PL than unannealed samples. Red electroluminescence (EL) was obtained from the SiOx in metal-insulator-semiconductor (MIS) structures and the annealed SiOx layers also exhibit more intense EL than unannealed layers. Particularly, the SiOx annealed after Ni-implantation showed the most intense EL which may be caused by highly concentrated radiative defects in the implanted SiOx.",

author = "Bae, {H. S.} and Lee, {W. S.} and Kim, {T. G.} and Whang, {C. N.} and Song, {J. H.} and S. Im",

year = "2001",

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AU - Bae, H. S.

AU - Lee, W. S.

AU - Kim, T. G.

AU - Whang, C. N.

AU - Song, J. H.

AU - Im, S.

PY - 2001/11

Y1 - 2001/11

N2 - SiOx layers were fabricated by thermal evaporation of SiO powders onto p-type Si(100) substrates at 200°C to investigate the electrical and light-emitting properties of the layers. After deposition, Ni ions of 70 keV were also implanted into SiOx layers at room temperature. Then both of the as-deposited and as-implanted samples were annealed in N2 ambient for 2 h at 500°C. Violet photoluminescence (PL) due to radiative defects was observed from all the SiOx samples but annealed ones showed more intense PL than unannealed samples. Red electroluminescence (EL) was obtained from the SiOx in metal-insulator-semiconductor (MIS) structures and the annealed SiOx layers also exhibit more intense EL than unannealed layers. Particularly, the SiOx annealed after Ni-implantation showed the most intense EL which may be caused by highly concentrated radiative defects in the implanted SiOx.

AB - SiOx layers were fabricated by thermal evaporation of SiO powders onto p-type Si(100) substrates at 200°C to investigate the electrical and light-emitting properties of the layers. After deposition, Ni ions of 70 keV were also implanted into SiOx layers at room temperature. Then both of the as-deposited and as-implanted samples were annealed in N2 ambient for 2 h at 500°C. Violet photoluminescence (PL) due to radiative defects was observed from all the SiOx samples but annealed ones showed more intense PL than unannealed samples. Red electroluminescence (EL) was obtained from the SiOx in metal-insulator-semiconductor (MIS) structures and the annealed SiOx layers also exhibit more intense EL than unannealed layers. Particularly, the SiOx annealed after Ni-implantation showed the most intense EL which may be caused by highly concentrated radiative defects in the implanted SiOx.

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