Tris-(8-hydroxyquinoline) aluminum (Alq3) films have been grown on silicon substrates by several techniques: neutral-cluster-beam deposition; thermal evaporation; and ionized-cluster-beam deposition technique. The films were characterized by low angle X-ray reflectivity, atomic force microscopy, Fourier transformed infrared (FTIR) spectroscopy and photoluminescence. According to the FTIR spectroscopy measurement, the spectra of all the Alq3 samples show almost the same signals of atomic binding regardless of the process conditions. However, the photoluminescence intensities of the films are different. When all the films are adjusted to the same thickness, neutral-cluster-beam deposition films show more intense photoluminescence than the thermal-evaporated ones, while ionized-cluster-beam deposition samples are found to be inferior in intensity. Since the photoluminescence intensity of the 8-hydroxyquinoline aluminum layers is one of the important factors for the performance of organic light emitting devices, the neutral-cluster-beam deposition seems to be a promising method for the film deposition of organic electroluminescence materials.
Bibliographical noteFunding Information:
This work was supported in part by the Korea Science and Engineering Foundation through Atomic-scale Surface Science Research Center at Yonsei University and in other part by Funds from Ministry of Industry and Resources in Korea (administration number A00-A04-2208-05-1-3) and by the Brain Korea 21 Project.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry