Characterization of a pentacene thin-film transistor with a HfO 2/Al2O3 gate insulator

H. J. Kim, S. J. Kang, D. S. Park, K. B. Chung, M. Noh, C. N. Whang, Mann-Ho Cho

Research output: Contribution to journalArticle

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Abstract

We fabricated pentacene thin-film transistors on HfO2/Al 2O3 gate insulator layers in an ultra-high vacuum system for the first time. The HfO2/Al2O3 was used as a gate insulator to decrease the operating voltage of the pentacene thin-film transistors. The field-effect mobility of the devices with HfO 2/Al2O3 was obtained by using the I-V characteristics, and the value was 0.024 cm2/Vs. The threshold voltage of the pentacene thin-film transistors with HfO2/Al 2O3 was decreased dramatically compared to that for devices using SiO2 (15.3 → -0.25 V). Therefore, a thin HfO 2/Al2O3 gate insulator layer can be used in pentacene thin-film transistors to lower the operating voltage.

Original languageEnglish
Pages (from-to)935-938
Number of pages4
JournalJournal of the Korean Physical Society
Volume45
Issue number4
Publication statusPublished - 2004 Oct 1

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transistors
insulators
thin films
vacuum systems
electric potential
threshold voltage
ultrahigh vacuum

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, H. J., Kang, S. J., Park, D. S., Chung, K. B., Noh, M., Whang, C. N., & Cho, M-H. (2004). Characterization of a pentacene thin-film transistor with a HfO 2/Al2O3 gate insulator. Journal of the Korean Physical Society, 45(4), 935-938.
Kim, H. J. ; Kang, S. J. ; Park, D. S. ; Chung, K. B. ; Noh, M. ; Whang, C. N. ; Cho, Mann-Ho. / Characterization of a pentacene thin-film transistor with a HfO 2/Al2O3 gate insulator. In: Journal of the Korean Physical Society. 2004 ; Vol. 45, No. 4. pp. 935-938.
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Kim, HJ, Kang, SJ, Park, DS, Chung, KB, Noh, M, Whang, CN & Cho, M-H 2004, 'Characterization of a pentacene thin-film transistor with a HfO 2/Al2O3 gate insulator', Journal of the Korean Physical Society, vol. 45, no. 4, pp. 935-938.

Characterization of a pentacene thin-film transistor with a HfO 2/Al2O3 gate insulator. / Kim, H. J.; Kang, S. J.; Park, D. S.; Chung, K. B.; Noh, M.; Whang, C. N.; Cho, Mann-Ho.

In: Journal of the Korean Physical Society, Vol. 45, No. 4, 01.10.2004, p. 935-938.

Research output: Contribution to journalArticle

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AU - Kim, H. J.

AU - Kang, S. J.

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AU - Noh, M.

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AU - Cho, Mann-Ho

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AB - We fabricated pentacene thin-film transistors on HfO2/Al 2O3 gate insulator layers in an ultra-high vacuum system for the first time. The HfO2/Al2O3 was used as a gate insulator to decrease the operating voltage of the pentacene thin-film transistors. The field-effect mobility of the devices with HfO 2/Al2O3 was obtained by using the I-V characteristics, and the value was 0.024 cm2/Vs. The threshold voltage of the pentacene thin-film transistors with HfO2/Al 2O3 was decreased dramatically compared to that for devices using SiO2 (15.3 → -0.25 V). Therefore, a thin HfO 2/Al2O3 gate insulator layer can be used in pentacene thin-film transistors to lower the operating voltage.

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Kim HJ, Kang SJ, Park DS, Chung KB, Noh M, Whang CN et al. Characterization of a pentacene thin-film transistor with a HfO 2/Al2O3 gate insulator. Journal of the Korean Physical Society. 2004 Oct 1;45(4):935-938.