Characterization of a pentacene thin-film transistor with a HfO 2/Al2O3 gate insulator

H. J. Kim, S. J. Kang, D. S. Park, K. B. Chung, M. Noh, C. N. Whang, M. H. Cho

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We fabricated pentacene thin-film transistors on HfO2/Al 2O3 gate insulator layers in an ultra-high vacuum system for the first time. The HfO2/Al2O3 was used as a gate insulator to decrease the operating voltage of the pentacene thin-film transistors. The field-effect mobility of the devices with HfO 2/Al2O3 was obtained by using the I-V characteristics, and the value was 0.024 cm2/Vs. The threshold voltage of the pentacene thin-film transistors with HfO2/Al 2O3 was decreased dramatically compared to that for devices using SiO2 (15.3 → -0.25 V). Therefore, a thin HfO 2/Al2O3 gate insulator layer can be used in pentacene thin-film transistors to lower the operating voltage.

Original languageEnglish
Pages (from-to)935-938
Number of pages4
JournalJournal of the Korean Physical Society
Volume45
Issue number4
Publication statusPublished - 2004 Oct

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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