Characterization of a solution-processed YHfZnO gate insulator for thin-film transistors

Si Joon Kim, Dong Lim Kim, Doo Na Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A solution-processed multicomponent oxide, yttrium hafnium zinc oxide (YHZO), was synthesized and deposited as a gate insulator. The YHZO film annealed at 600°C contained an amorphous phase based on the results of thermogravimetry, differential thermal analysis, and X-ray diffraction. The electrical characteristics of the YHZO film were analyzed by measuring the leakage current. The high dielectric constant (16.4) and high breakdown voltage (71.6 V) of the YHZO films resulted from the characteristics of HfO2 and Y2O3, respectively. To examine if YHZO can be applied to thin-film transistors (TFTs), indium gallium zinc oxide TFTs with a YHZO gate insulator were also fabricated. The desirable characteristics of the YHZO films when used as a gate insulator show that the limitations of the general binary-oxide-based materials and of the conventional vacuum processes can be overcome.

Original languageEnglish
Pages (from-to)165-168
Number of pages4
JournalJournal of Information Display
Volume11
Issue number4
DOIs
Publication statusPublished - 2010 Jan 1

Fingerprint

Hafnium
Zinc Oxide
Thin film transistors
Zinc oxide
Yttrium
Oxide films
Gallium
Indium
Yttrium oxide
Electric breakdown
Leakage currents
Differential thermal analysis
Oxides
Thermogravimetric analysis
Permittivity
Vacuum
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

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abstract = "A solution-processed multicomponent oxide, yttrium hafnium zinc oxide (YHZO), was synthesized and deposited as a gate insulator. The YHZO film annealed at 600°C contained an amorphous phase based on the results of thermogravimetry, differential thermal analysis, and X-ray diffraction. The electrical characteristics of the YHZO film were analyzed by measuring the leakage current. The high dielectric constant (16.4) and high breakdown voltage (71.6 V) of the YHZO films resulted from the characteristics of HfO2 and Y2O3, respectively. To examine if YHZO can be applied to thin-film transistors (TFTs), indium gallium zinc oxide TFTs with a YHZO gate insulator were also fabricated. The desirable characteristics of the YHZO films when used as a gate insulator show that the limitations of the general binary-oxide-based materials and of the conventional vacuum processes can be overcome.",
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Characterization of a solution-processed YHfZnO gate insulator for thin-film transistors. / Kim, Si Joon; Kim, Dong Lim; Kim, Doo Na; Kim, Hyun Jae.

In: Journal of Information Display, Vol. 11, No. 4, 01.01.2010, p. 165-168.

Research output: Contribution to journalArticle

TY - JOUR

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N2 - A solution-processed multicomponent oxide, yttrium hafnium zinc oxide (YHZO), was synthesized and deposited as a gate insulator. The YHZO film annealed at 600°C contained an amorphous phase based on the results of thermogravimetry, differential thermal analysis, and X-ray diffraction. The electrical characteristics of the YHZO film were analyzed by measuring the leakage current. The high dielectric constant (16.4) and high breakdown voltage (71.6 V) of the YHZO films resulted from the characteristics of HfO2 and Y2O3, respectively. To examine if YHZO can be applied to thin-film transistors (TFTs), indium gallium zinc oxide TFTs with a YHZO gate insulator were also fabricated. The desirable characteristics of the YHZO films when used as a gate insulator show that the limitations of the general binary-oxide-based materials and of the conventional vacuum processes can be overcome.

AB - A solution-processed multicomponent oxide, yttrium hafnium zinc oxide (YHZO), was synthesized and deposited as a gate insulator. The YHZO film annealed at 600°C contained an amorphous phase based on the results of thermogravimetry, differential thermal analysis, and X-ray diffraction. The electrical characteristics of the YHZO film were analyzed by measuring the leakage current. The high dielectric constant (16.4) and high breakdown voltage (71.6 V) of the YHZO films resulted from the characteristics of HfO2 and Y2O3, respectively. To examine if YHZO can be applied to thin-film transistors (TFTs), indium gallium zinc oxide TFTs with a YHZO gate insulator were also fabricated. The desirable characteristics of the YHZO films when used as a gate insulator show that the limitations of the general binary-oxide-based materials and of the conventional vacuum processes can be overcome.

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