Characterization of Ag doped p-type ZnO films

G. H. Kim, B. D. Ahn, D. L. Kim, K. H. Jung, Sang Youn Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ag-doped ZnO thinf films have been fabricated by pulsed laser deposition. Thermal analysis and X-ray photoelectron spectroscopy (XPS) were systematically investigated to verify the doping mechanism of Ag doped ZnO thin film depending on deposition temperature. The fabricated p-type Ag doped ZnO films shows the hole concentration in the range from 4.9×10 16 to 6.0×10 17 cm -3 . ZnO exhibits n-type conductivity due to its native defects, such as zinc interstitials and oxygen vacancies. This strong n-type conductivity of ZnO restricts the application and it is difficult to fabricate p-type conductive ZnO 1 . Therefore, research on ZnO has been mainly focused on the simple synthesis of p-type ZnO and intrinsic ZnO having insulating properties using various techniques and studying its doping properties 2-4 . Recently, Li et al. 5 reported that a ZnO p - n diode could be fabricated using a structure of ZnO:Ag/ZnO homo-junction on n-Si substrate. In previous letter 6 , we also reported that Ag-doped p-type ZnO thin films have been fabricated and characterized. In this study, thermal analysis and X-ray photoelectron spectroscopy (XPS) were systematically performed to investigate doping mechanism of Ag doped ZnO thin film depending on deposition temperature,. Ag doped ZnO thin films were grown on (0001) sapphire substrates by pulsed laser deposition (PLD). The electrical properties of Ag-doped ZnO films have been investigated by Hall measurement. Thermal behavior of the samples was measured in the temperature range from 30°C to 400°C. XPS analysis of Ag doped ZnO thin films were performed to investigate the effects of deposition temperature on the film composition and the chemical bonding. Table 1 shows the Hall measurement results of the Ag doped ZnO thin film at various deposition temperatures. In our previous report 8 , we reported that the electrical properties are divided by different three temperature regions from 100°C to 175°C (region I), 175°C to 275°C (region II), and 275°C to 400°C (region III). In each region, Ag doped ZnO thin films exhibit various electrical properties, such as semi-insulating (region I), .p-type (region II), and n-type (region III) properties depending on deposition temperatures. In the case of Ag doped ZnO films deposited at the region I, it shows semi-insulator behavior with a low carrier concentration and high resistivity. While Ag-doped ZnO films deposited at the region II exhibit .p-type conductivity. The hole concentration, carrier mobility, and resistivity of p-type Ag-doped ZnO films are measured to be in the range from 4.9×10 16 to 6.0×10 17 cm -3 , 0.29 to 2.32 cm 2 /Vs, and 34 to 54 Ω cm, respectively. The Ag doped ZnO films deposited at the region III show a transition from p-type to n-type conductivity with the electron concentration of up to 2.27×10 20 cm -3 . This means that a role of Ag atoms in ZnO is changed by depending on deposition temperature. Consequently, it is possible to control of conductivity of ZnO films from intrinsic ZnO to p-type ZnO using Ag dopant and suitable deposition conditions.

Original languageEnglish
Title of host publicationZinc Oxide Materials and Devices II
DOIs
Publication statusPublished - 2007 May 24
EventZinc Oxide Materials and Devices II - San Jose, CA, United States
Duration: 2007 Jan 212007 Jan 24

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6474
ISSN (Print)0277-786X

Other

OtherZinc Oxide Materials and Devices II
CountryUnited States
CitySan Jose, CA
Period07/1/2107/1/24

Fingerprint

Thin films
thin films
conductivity
Doping (additives)
Hole concentration
Temperature
Electric properties
temperature
X ray photoelectron spectroscopy
electrical properties
photoelectron spectroscopy
Pulsed laser deposition
Thin Films
Thermoanalysis
pulsed laser deposition
thermal analysis
Conductivity
Zinc Oxide
electrical resistivity
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kim, G. H., Ahn, B. D., Kim, D. L., Jung, K. H., & Lee, S. Y. (2007). Characterization of Ag doped p-type ZnO films. In Zinc Oxide Materials and Devices II [647409] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6474). https://doi.org/10.1117/12.699613
Kim, G. H. ; Ahn, B. D. ; Kim, D. L. ; Jung, K. H. ; Lee, Sang Youn. / Characterization of Ag doped p-type ZnO films. Zinc Oxide Materials and Devices II. 2007. (Proceedings of SPIE - The International Society for Optical Engineering).
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title = "Characterization of Ag doped p-type ZnO films",
abstract = "Ag-doped ZnO thinf films have been fabricated by pulsed laser deposition. Thermal analysis and X-ray photoelectron spectroscopy (XPS) were systematically investigated to verify the doping mechanism of Ag doped ZnO thin film depending on deposition temperature. The fabricated p-type Ag doped ZnO films shows the hole concentration in the range from 4.9×10 16 to 6.0×10 17 cm -3 . ZnO exhibits n-type conductivity due to its native defects, such as zinc interstitials and oxygen vacancies. This strong n-type conductivity of ZnO restricts the application and it is difficult to fabricate p-type conductive ZnO 1 . Therefore, research on ZnO has been mainly focused on the simple synthesis of p-type ZnO and intrinsic ZnO having insulating properties using various techniques and studying its doping properties 2-4 . Recently, Li et al. 5 reported that a ZnO p - n diode could be fabricated using a structure of ZnO:Ag/ZnO homo-junction on n-Si substrate. In previous letter 6 , we also reported that Ag-doped p-type ZnO thin films have been fabricated and characterized. In this study, thermal analysis and X-ray photoelectron spectroscopy (XPS) were systematically performed to investigate doping mechanism of Ag doped ZnO thin film depending on deposition temperature,. Ag doped ZnO thin films were grown on (0001) sapphire substrates by pulsed laser deposition (PLD). The electrical properties of Ag-doped ZnO films have been investigated by Hall measurement. Thermal behavior of the samples was measured in the temperature range from 30°C to 400°C. XPS analysis of Ag doped ZnO thin films were performed to investigate the effects of deposition temperature on the film composition and the chemical bonding. Table 1 shows the Hall measurement results of the Ag doped ZnO thin film at various deposition temperatures. In our previous report 8 , we reported that the electrical properties are divided by different three temperature regions from 100°C to 175°C (region I), 175°C to 275°C (region II), and 275°C to 400°C (region III). In each region, Ag doped ZnO thin films exhibit various electrical properties, such as semi-insulating (region I), .p-type (region II), and n-type (region III) properties depending on deposition temperatures. In the case of Ag doped ZnO films deposited at the region I, it shows semi-insulator behavior with a low carrier concentration and high resistivity. While Ag-doped ZnO films deposited at the region II exhibit .p-type conductivity. The hole concentration, carrier mobility, and resistivity of p-type Ag-doped ZnO films are measured to be in the range from 4.9×10 16 to 6.0×10 17 cm -3 , 0.29 to 2.32 cm 2 /Vs, and 34 to 54 Ω cm, respectively. The Ag doped ZnO films deposited at the region III show a transition from p-type to n-type conductivity with the electron concentration of up to 2.27×10 20 cm -3 . This means that a role of Ag atoms in ZnO is changed by depending on deposition temperature. Consequently, it is possible to control of conductivity of ZnO films from intrinsic ZnO to p-type ZnO using Ag dopant and suitable deposition conditions.",
author = "Kim, {G. H.} and Ahn, {B. D.} and Kim, {D. L.} and Jung, {K. H.} and Lee, {Sang Youn}",
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language = "English",
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series = "Proceedings of SPIE - The International Society for Optical Engineering",
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Kim, GH, Ahn, BD, Kim, DL, Jung, KH & Lee, SY 2007, Characterization of Ag doped p-type ZnO films. in Zinc Oxide Materials and Devices II., 647409, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6474, Zinc Oxide Materials and Devices II, San Jose, CA, United States, 07/1/21. https://doi.org/10.1117/12.699613

Characterization of Ag doped p-type ZnO films. / Kim, G. H.; Ahn, B. D.; Kim, D. L.; Jung, K. H.; Lee, Sang Youn.

Zinc Oxide Materials and Devices II. 2007. 647409 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6474).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Characterization of Ag doped p-type ZnO films

AU - Kim, G. H.

AU - Ahn, B. D.

AU - Kim, D. L.

AU - Jung, K. H.

AU - Lee, Sang Youn

PY - 2007/5/24

Y1 - 2007/5/24

N2 - Ag-doped ZnO thinf films have been fabricated by pulsed laser deposition. Thermal analysis and X-ray photoelectron spectroscopy (XPS) were systematically investigated to verify the doping mechanism of Ag doped ZnO thin film depending on deposition temperature. The fabricated p-type Ag doped ZnO films shows the hole concentration in the range from 4.9×10 16 to 6.0×10 17 cm -3 . ZnO exhibits n-type conductivity due to its native defects, such as zinc interstitials and oxygen vacancies. This strong n-type conductivity of ZnO restricts the application and it is difficult to fabricate p-type conductive ZnO 1 . Therefore, research on ZnO has been mainly focused on the simple synthesis of p-type ZnO and intrinsic ZnO having insulating properties using various techniques and studying its doping properties 2-4 . Recently, Li et al. 5 reported that a ZnO p - n diode could be fabricated using a structure of ZnO:Ag/ZnO homo-junction on n-Si substrate. In previous letter 6 , we also reported that Ag-doped p-type ZnO thin films have been fabricated and characterized. In this study, thermal analysis and X-ray photoelectron spectroscopy (XPS) were systematically performed to investigate doping mechanism of Ag doped ZnO thin film depending on deposition temperature,. Ag doped ZnO thin films were grown on (0001) sapphire substrates by pulsed laser deposition (PLD). The electrical properties of Ag-doped ZnO films have been investigated by Hall measurement. Thermal behavior of the samples was measured in the temperature range from 30°C to 400°C. XPS analysis of Ag doped ZnO thin films were performed to investigate the effects of deposition temperature on the film composition and the chemical bonding. Table 1 shows the Hall measurement results of the Ag doped ZnO thin film at various deposition temperatures. In our previous report 8 , we reported that the electrical properties are divided by different three temperature regions from 100°C to 175°C (region I), 175°C to 275°C (region II), and 275°C to 400°C (region III). In each region, Ag doped ZnO thin films exhibit various electrical properties, such as semi-insulating (region I), .p-type (region II), and n-type (region III) properties depending on deposition temperatures. In the case of Ag doped ZnO films deposited at the region I, it shows semi-insulator behavior with a low carrier concentration and high resistivity. While Ag-doped ZnO films deposited at the region II exhibit .p-type conductivity. The hole concentration, carrier mobility, and resistivity of p-type Ag-doped ZnO films are measured to be in the range from 4.9×10 16 to 6.0×10 17 cm -3 , 0.29 to 2.32 cm 2 /Vs, and 34 to 54 Ω cm, respectively. The Ag doped ZnO films deposited at the region III show a transition from p-type to n-type conductivity with the electron concentration of up to 2.27×10 20 cm -3 . This means that a role of Ag atoms in ZnO is changed by depending on deposition temperature. Consequently, it is possible to control of conductivity of ZnO films from intrinsic ZnO to p-type ZnO using Ag dopant and suitable deposition conditions.

AB - Ag-doped ZnO thinf films have been fabricated by pulsed laser deposition. Thermal analysis and X-ray photoelectron spectroscopy (XPS) were systematically investigated to verify the doping mechanism of Ag doped ZnO thin film depending on deposition temperature. The fabricated p-type Ag doped ZnO films shows the hole concentration in the range from 4.9×10 16 to 6.0×10 17 cm -3 . ZnO exhibits n-type conductivity due to its native defects, such as zinc interstitials and oxygen vacancies. This strong n-type conductivity of ZnO restricts the application and it is difficult to fabricate p-type conductive ZnO 1 . Therefore, research on ZnO has been mainly focused on the simple synthesis of p-type ZnO and intrinsic ZnO having insulating properties using various techniques and studying its doping properties 2-4 . Recently, Li et al. 5 reported that a ZnO p - n diode could be fabricated using a structure of ZnO:Ag/ZnO homo-junction on n-Si substrate. In previous letter 6 , we also reported that Ag-doped p-type ZnO thin films have been fabricated and characterized. In this study, thermal analysis and X-ray photoelectron spectroscopy (XPS) were systematically performed to investigate doping mechanism of Ag doped ZnO thin film depending on deposition temperature,. Ag doped ZnO thin films were grown on (0001) sapphire substrates by pulsed laser deposition (PLD). The electrical properties of Ag-doped ZnO films have been investigated by Hall measurement. Thermal behavior of the samples was measured in the temperature range from 30°C to 400°C. XPS analysis of Ag doped ZnO thin films were performed to investigate the effects of deposition temperature on the film composition and the chemical bonding. Table 1 shows the Hall measurement results of the Ag doped ZnO thin film at various deposition temperatures. In our previous report 8 , we reported that the electrical properties are divided by different three temperature regions from 100°C to 175°C (region I), 175°C to 275°C (region II), and 275°C to 400°C (region III). In each region, Ag doped ZnO thin films exhibit various electrical properties, such as semi-insulating (region I), .p-type (region II), and n-type (region III) properties depending on deposition temperatures. In the case of Ag doped ZnO films deposited at the region I, it shows semi-insulator behavior with a low carrier concentration and high resistivity. While Ag-doped ZnO films deposited at the region II exhibit .p-type conductivity. The hole concentration, carrier mobility, and resistivity of p-type Ag-doped ZnO films are measured to be in the range from 4.9×10 16 to 6.0×10 17 cm -3 , 0.29 to 2.32 cm 2 /Vs, and 34 to 54 Ω cm, respectively. The Ag doped ZnO films deposited at the region III show a transition from p-type to n-type conductivity with the electron concentration of up to 2.27×10 20 cm -3 . This means that a role of Ag atoms in ZnO is changed by depending on deposition temperature. Consequently, it is possible to control of conductivity of ZnO films from intrinsic ZnO to p-type ZnO using Ag dopant and suitable deposition conditions.

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Kim GH, Ahn BD, Kim DL, Jung KH, Lee SY. Characterization of Ag doped p-type ZnO films. In Zinc Oxide Materials and Devices II. 2007. 647409. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.699613