Characterization of Al2O3 films grown by electron beam evaporator on Si substrates

Myoung Yone Seo, Edward Namkyu Cho, Chang Eun Kim, Pyung Moon, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

We report the characterization of aluminum oxide (Al2O 3) films which are grown on Si substrates by electron beam evaporator. This paper focuses on the characteristic variation of Al2O3 films depending on the different annealing techniques, such as post-deposition annealing and post-metallization annealing. The capacitance-voltage (C-V) curves indicate a negative charge and interface trap charge density between the Al2O3 film and Si interface. The current-voltage (I-V) curves show a leakage current. The x-ray diffraction (XRD) patterns show the crystallinity of Al2O3 films. Based on the results, the annealing effect is important condition to increase negative fixed charge in the Al2O3 films.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages238-239
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

Fingerprint

Evaporators
Electron beams
Annealing
Substrates
Electric potential
Metallizing
Charge density
Leakage currents
Diffraction patterns
Capacitance
Aluminum
X rays
Oxides

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Seo, M. Y., Cho, E. N., Kim, C. E., Moon, P., & Yun, I. (2010). Characterization of Al2O3 films grown by electron beam evaporator on Si substrates. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 238-239). [5424657] https://doi.org/10.1109/INEC.2010.5424657
Seo, Myoung Yone ; Cho, Edward Namkyu ; Kim, Chang Eun ; Moon, Pyung ; Yun, Ilgu. / Characterization of Al2O3 films grown by electron beam evaporator on Si substrates. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 238-239
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title = "Characterization of Al2O3 films grown by electron beam evaporator on Si substrates",
abstract = "We report the characterization of aluminum oxide (Al2O 3) films which are grown on Si substrates by electron beam evaporator. This paper focuses on the characteristic variation of Al2O3 films depending on the different annealing techniques, such as post-deposition annealing and post-metallization annealing. The capacitance-voltage (C-V) curves indicate a negative charge and interface trap charge density between the Al2O3 film and Si interface. The current-voltage (I-V) curves show a leakage current. The x-ray diffraction (XRD) patterns show the crystallinity of Al2O3 films. Based on the results, the annealing effect is important condition to increase negative fixed charge in the Al2O3 films.",
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Seo, MY, Cho, EN, Kim, CE, Moon, P & Yun, I 2010, Characterization of Al2O3 films grown by electron beam evaporator on Si substrates. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424657, pp. 238-239, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424657

Characterization of Al2O3 films grown by electron beam evaporator on Si substrates. / Seo, Myoung Yone; Cho, Edward Namkyu; Kim, Chang Eun; Moon, Pyung; Yun, Ilgu.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 238-239 5424657.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Seo, Myoung Yone

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N2 - We report the characterization of aluminum oxide (Al2O 3) films which are grown on Si substrates by electron beam evaporator. This paper focuses on the characteristic variation of Al2O3 films depending on the different annealing techniques, such as post-deposition annealing and post-metallization annealing. The capacitance-voltage (C-V) curves indicate a negative charge and interface trap charge density between the Al2O3 film and Si interface. The current-voltage (I-V) curves show a leakage current. The x-ray diffraction (XRD) patterns show the crystallinity of Al2O3 films. Based on the results, the annealing effect is important condition to increase negative fixed charge in the Al2O3 films.

AB - We report the characterization of aluminum oxide (Al2O 3) films which are grown on Si substrates by electron beam evaporator. This paper focuses on the characteristic variation of Al2O3 films depending on the different annealing techniques, such as post-deposition annealing and post-metallization annealing. The capacitance-voltage (C-V) curves indicate a negative charge and interface trap charge density between the Al2O3 film and Si interface. The current-voltage (I-V) curves show a leakage current. The x-ray diffraction (XRD) patterns show the crystallinity of Al2O3 films. Based on the results, the annealing effect is important condition to increase negative fixed charge in the Al2O3 films.

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Seo MY, Cho EN, Kim CE, Moon P, Yun I. Characterization of Al2O3 films grown by electron beam evaporator on Si substrates. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 238-239. 5424657 https://doi.org/10.1109/INEC.2010.5424657