We describe the construction and characterization of a GaN violet laser diode in a compact, extended cavity geometry. Up to 3.5 mW of single frequency power at 392 nm is generated which is continuously tuneable over 6 GHz and coarsely tuneable over 2.7 nm. We place an upper limit on the linewidth of 5 MHz. The performance of the violet diode laser is compared to that of visible laser diodes in our extended cavity geometry. Possible spectroscopic applications are discussed.
Bibliographical noteFunding Information:
We would like to thank the Royal Society, the Leverhulme Trust and the UK Engineering and Physical Sciences Research Council for their support of this work. K.D. is a Royal Society of Edinburgh Research Fellow.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering