Characterization of an extended cavity violet diode laser

R. S. Conroy, J. J. Hewett, G. P.T. Lancaster, W. Sibbett, J. W. Allen, K. Dholakia

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Abstract

We describe the construction and characterization of a GaN violet laser diode in a compact, extended cavity geometry. Up to 3.5 mW of single frequency power at 392 nm is generated which is continuously tuneable over 6 GHz and coarsely tuneable over 2.7 nm. We place an upper limit on the linewidth of 5 MHz. The performance of the violet diode laser is compared to that of visible laser diodes in our extended cavity geometry. Possible spectroscopic applications are discussed.

Original languageEnglish
Pages (from-to)185-188
Number of pages4
JournalOptics Communications
Volume175
Issue number1
DOIs
Publication statusPublished - 2000 Feb 15

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

Cite this

Conroy, R. S., Hewett, J. J., Lancaster, G. P. T., Sibbett, W., Allen, J. W., & Dholakia, K. (2000). Characterization of an extended cavity violet diode laser. Optics Communications, 175(1), 185-188. https://doi.org/10.1016/S0030-4018(99)00742-7