Characterization of ferromagnetic Ga1-xMnxN layers grown on sapphire (0001) substrates

I. T. Yoon, C. S. Park, H. J. Kim, Y. G. Kim, T. W. Kang, M. C. Jeong, M. H. Ham, J. M. Myoung

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Abstract

The Ga1-xMnxN epilayers with a well-ordered ferromagnetic structure were grown on sapphire (0001) substrates. Ga 1-xMnxN films exhibited n-type conductivity and ferromagnetic ordering with a Curie temperature (TC) above room temperature. The photoluminescence (PL) measurements revealed that the Mn acceptor level of Ga1-xMnxN layers having low Mn content was located at around 330 meV above the top of the valence band. The results show that the excitation and temperature-dependent PL provided convincing evidence of a band-edge exciton-acceptor transition character.

Original languageEnglish
Pages (from-to)591-596
Number of pages6
JournalJournal of Applied Physics
Volume95
Issue number2
DOIs
Publication statusPublished - 2004 Jan 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Yoon, I. T., Park, C. S., Kim, H. J., Kim, Y. G., Kang, T. W., Jeong, M. C., Ham, M. H., & Myoung, J. M. (2004). Characterization of ferromagnetic Ga1-xMnxN layers grown on sapphire (0001) substrates. Journal of Applied Physics, 95(2), 591-596. https://doi.org/10.1063/1.1633340