Characterization of films and interfaces in n-ZnO/p-Si photodiodes

J. Y. Lee, Y. S. Choi, W. H. Choi, H. W. Yeom, Y. K. Yoon, Jae Hoon Kim, Seongil Im

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. RF sputtering was performed to deposit ZnO films on p-Si substrates at various substrate temperatures of 300, 480 and 550 °C using Ar:O2 ratios of 6:1. Typical rectifying behaviors were observed from most of the diodes as characterized by the current-voltage (I-V) measurement. Some of the diodes exhibit photoelectric effects under illumination using monochromatic red light with a wavelength of 670 nm. Maximum quantum efficiency of 53% was obtained under a reverse bias condition from a diode with ZnO film deposited at 480 °C. Measuring photoluminescence, transmittance, sheet resistance from the ZnO films, and characterizing the n-ZnO/p-Si interface with X-ray photoelectron spectroscopy, it is concluded that the diodes with n-ZnO deposited at 480 °C conserve relatively a high film quality and good interface junction to exhibit the best photoelectric property.

Original languageEnglish
Pages (from-to)112-116
Number of pages5
JournalThin Solid Films
Volume420-421
DOIs
Publication statusPublished - 2002 Dec 2

Fingerprint

Photodiodes
photodiodes
Diodes
diodes
Photoelectricity
photoelectric effect
Sheet resistance
Substrates
Quantum efficiency
Sputtering
Heterojunctions
heterojunctions
quantum efficiency
transmittance
Photoluminescence
Deposits
X ray photoelectron spectroscopy
Lighting
sputtering
illumination

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Lee, J. Y. ; Choi, Y. S. ; Choi, W. H. ; Yeom, H. W. ; Yoon, Y. K. ; Kim, Jae Hoon ; Im, Seongil. / Characterization of films and interfaces in n-ZnO/p-Si photodiodes. In: Thin Solid Films. 2002 ; Vol. 420-421. pp. 112-116.
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Characterization of films and interfaces in n-ZnO/p-Si photodiodes. / Lee, J. Y.; Choi, Y. S.; Choi, W. H.; Yeom, H. W.; Yoon, Y. K.; Kim, Jae Hoon; Im, Seongil.

In: Thin Solid Films, Vol. 420-421, 02.12.2002, p. 112-116.

Research output: Contribution to journalArticle

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T1 - Characterization of films and interfaces in n-ZnO/p-Si photodiodes

AU - Lee, J. Y.

AU - Choi, Y. S.

AU - Choi, W. H.

AU - Yeom, H. W.

AU - Yoon, Y. K.

AU - Kim, Jae Hoon

AU - Im, Seongil

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N2 - We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. RF sputtering was performed to deposit ZnO films on p-Si substrates at various substrate temperatures of 300, 480 and 550 °C using Ar:O2 ratios of 6:1. Typical rectifying behaviors were observed from most of the diodes as characterized by the current-voltage (I-V) measurement. Some of the diodes exhibit photoelectric effects under illumination using monochromatic red light with a wavelength of 670 nm. Maximum quantum efficiency of 53% was obtained under a reverse bias condition from a diode with ZnO film deposited at 480 °C. Measuring photoluminescence, transmittance, sheet resistance from the ZnO films, and characterizing the n-ZnO/p-Si interface with X-ray photoelectron spectroscopy, it is concluded that the diodes with n-ZnO deposited at 480 °C conserve relatively a high film quality and good interface junction to exhibit the best photoelectric property.

AB - We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. RF sputtering was performed to deposit ZnO films on p-Si substrates at various substrate temperatures of 300, 480 and 550 °C using Ar:O2 ratios of 6:1. Typical rectifying behaviors were observed from most of the diodes as characterized by the current-voltage (I-V) measurement. Some of the diodes exhibit photoelectric effects under illumination using monochromatic red light with a wavelength of 670 nm. Maximum quantum efficiency of 53% was obtained under a reverse bias condition from a diode with ZnO film deposited at 480 °C. Measuring photoluminescence, transmittance, sheet resistance from the ZnO films, and characterizing the n-ZnO/p-Si interface with X-ray photoelectron spectroscopy, it is concluded that the diodes with n-ZnO deposited at 480 °C conserve relatively a high film quality and good interface junction to exhibit the best photoelectric property.

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