We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. RF sputtering was performed to deposit ZnO films on p-Si substrates at various substrate temperatures of 300, 480 and 550 °C using Ar:O2 ratios of 6:1. Typical rectifying behaviors were observed from most of the diodes as characterized by the current-voltage (I-V) measurement. Some of the diodes exhibit photoelectric effects under illumination using monochromatic red light with a wavelength of 670 nm. Maximum quantum efficiency of 53% was obtained under a reverse bias condition from a diode with ZnO film deposited at 480 °C. Measuring photoluminescence, transmittance, sheet resistance from the ZnO films, and characterizing the n-ZnO/p-Si interface with X-ray photoelectron spectroscopy, it is concluded that the diodes with n-ZnO deposited at 480 °C conserve relatively a high film quality and good interface junction to exhibit the best photoelectric property.
Bibliographical noteFunding Information:
The work has been supported by the Brain Korea 21 project and partly supported by Korea Research Foundation KISTEP fund (#M2-0204-25-0033-02-A09-03-004).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry