Characterization of Ge and C implanted Si1-XGex and Si1-Y-ZGeYCZ layers

Ashawant Gupta, Yao Wu Cheng, Jianmin Qiao, M. Mahmudur Rahman, Cary Y. Yang, Seongil Im, Nathan W. Cheung, Paul K.L. Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In an attempt to substantiate our previous findings of boron deactivation and/or donor complex formation due to high-dose Ge and C implantation, SiGe and SiGeC layers were fabricated and characterized. Cross-sectional transmission electron microscopy indicated that the SiGe layer with peak Ge concentration of 5 at% was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of Ge as a result of strain relaxation. Results of spreading resistance profiling were found to be consistent with the model of dopant deactivation due to Ge implantation and subsequent solid phase epitaxial growth of the amorphous layer. Furthermore, for unstrained SiGe layers (Ge peak concentration ≥7 at%), formation of donor complexes is indicated. Preliminary photoluminescence results correlate with the spreading resistance profiling results and indicate shallow donor complex formation.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsM.A. Tischler, R.T. Collins, M.L.W. Thewalt, G. Abstreiter
PublisherPubl by Materials Research Society
Pages135-138
Number of pages4
Volume298
ISBN (Print)1558991948
Publication statusPublished - 1993 Dec 1
EventProceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA
Duration: 1993 Apr 121993 Apr 14

Other

OtherProceedings of the Symposium on Silicon-Based Optoelectronic Materials
CitySan Francisco, CA, USA
Period93/4/1293/4/14

Fingerprint

Strain relaxation
Boron
Stacking faults
Epitaxial growth
Ion implantation
Photoluminescence
Doping (additives)
Transmission electron microscopy
deactivation
implantation
crystal defects
solid phases
boron
photoluminescence
dosage
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Gupta, A., Cheng, Y. W., Qiao, J., Rahman, M. M., Yang, C. Y., Im, S., ... Yu, P. K. L. (1993). Characterization of Ge and C implanted Si1-XGex and Si1-Y-ZGeYCZ layers. In M. A. Tischler, R. T. Collins, M. L. W. Thewalt, & G. Abstreiter (Eds.), Materials Research Society Symposium Proceedings (Vol. 298, pp. 135-138). Publ by Materials Research Society.
Gupta, Ashawant ; Cheng, Yao Wu ; Qiao, Jianmin ; Rahman, M. Mahmudur ; Yang, Cary Y. ; Im, Seongil ; Cheung, Nathan W. ; Yu, Paul K.L. / Characterization of Ge and C implanted Si1-XGex and Si1-Y-ZGeYCZ layers. Materials Research Society Symposium Proceedings. editor / M.A. Tischler ; R.T. Collins ; M.L.W. Thewalt ; G. Abstreiter. Vol. 298 Publ by Materials Research Society, 1993. pp. 135-138
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abstract = "In an attempt to substantiate our previous findings of boron deactivation and/or donor complex formation due to high-dose Ge and C implantation, SiGe and SiGeC layers were fabricated and characterized. Cross-sectional transmission electron microscopy indicated that the SiGe layer with peak Ge concentration of 5 at{\%} was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of Ge as a result of strain relaxation. Results of spreading resistance profiling were found to be consistent with the model of dopant deactivation due to Ge implantation and subsequent solid phase epitaxial growth of the amorphous layer. Furthermore, for unstrained SiGe layers (Ge peak concentration ≥7 at{\%}), formation of donor complexes is indicated. Preliminary photoluminescence results correlate with the spreading resistance profiling results and indicate shallow donor complex formation.",
author = "Ashawant Gupta and Cheng, {Yao Wu} and Jianmin Qiao and Rahman, {M. Mahmudur} and Yang, {Cary Y.} and Seongil Im and Cheung, {Nathan W.} and Yu, {Paul K.L.}",
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Gupta, A, Cheng, YW, Qiao, J, Rahman, MM, Yang, CY, Im, S, Cheung, NW & Yu, PKL 1993, Characterization of Ge and C implanted Si1-XGex and Si1-Y-ZGeYCZ layers. in MA Tischler, RT Collins, MLW Thewalt & G Abstreiter (eds), Materials Research Society Symposium Proceedings. vol. 298, Publ by Materials Research Society, pp. 135-138, Proceedings of the Symposium on Silicon-Based Optoelectronic Materials, San Francisco, CA, USA, 93/4/12.

Characterization of Ge and C implanted Si1-XGex and Si1-Y-ZGeYCZ layers. / Gupta, Ashawant; Cheng, Yao Wu; Qiao, Jianmin; Rahman, M. Mahmudur; Yang, Cary Y.; Im, Seongil; Cheung, Nathan W.; Yu, Paul K.L.

Materials Research Society Symposium Proceedings. ed. / M.A. Tischler; R.T. Collins; M.L.W. Thewalt; G. Abstreiter. Vol. 298 Publ by Materials Research Society, 1993. p. 135-138.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Characterization of Ge and C implanted Si1-XGex and Si1-Y-ZGeYCZ layers

AU - Gupta, Ashawant

AU - Cheng, Yao Wu

AU - Qiao, Jianmin

AU - Rahman, M. Mahmudur

AU - Yang, Cary Y.

AU - Im, Seongil

AU - Cheung, Nathan W.

AU - Yu, Paul K.L.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - In an attempt to substantiate our previous findings of boron deactivation and/or donor complex formation due to high-dose Ge and C implantation, SiGe and SiGeC layers were fabricated and characterized. Cross-sectional transmission electron microscopy indicated that the SiGe layer with peak Ge concentration of 5 at% was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of Ge as a result of strain relaxation. Results of spreading resistance profiling were found to be consistent with the model of dopant deactivation due to Ge implantation and subsequent solid phase epitaxial growth of the amorphous layer. Furthermore, for unstrained SiGe layers (Ge peak concentration ≥7 at%), formation of donor complexes is indicated. Preliminary photoluminescence results correlate with the spreading resistance profiling results and indicate shallow donor complex formation.

AB - In an attempt to substantiate our previous findings of boron deactivation and/or donor complex formation due to high-dose Ge and C implantation, SiGe and SiGeC layers were fabricated and characterized. Cross-sectional transmission electron microscopy indicated that the SiGe layer with peak Ge concentration of 5 at% was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of Ge as a result of strain relaxation. Results of spreading resistance profiling were found to be consistent with the model of dopant deactivation due to Ge implantation and subsequent solid phase epitaxial growth of the amorphous layer. Furthermore, for unstrained SiGe layers (Ge peak concentration ≥7 at%), formation of donor complexes is indicated. Preliminary photoluminescence results correlate with the spreading resistance profiling results and indicate shallow donor complex formation.

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M3 - Conference contribution

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Gupta A, Cheng YW, Qiao J, Rahman MM, Yang CY, Im S et al. Characterization of Ge and C implanted Si1-XGex and Si1-Y-ZGeYCZ layers. In Tischler MA, Collins RT, Thewalt MLW, Abstreiter G, editors, Materials Research Society Symposium Proceedings. Vol. 298. Publ by Materials Research Society. 1993. p. 135-138