Characterization of Ge and C implanted Si1-XGex and Si1-Y-ZGeYCZ layers

Ashawant Gupta; Yao Wu Cheng; Jianmin Qiao; M. Mahmudur Rahman; Cary Y. Yang; Seongil Im; Nathan W. Cheung; Paul K.L. Yu

Characterization of Ge and C implanted Si_1-XGe_x and Si_1-Y-ZGe_YC_Z layers

Ashawant Gupta, Yao Wu Cheng, Jianmin Qiao, M. Mahmudur Rahman, Cary Y. Yang, Seongil Im, Nathan W. Cheung, Paul K.L. Yu

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In an attempt to substantiate our previous findings of boron deactivation and/or donor complex formation due to high-dose Ge and C implantation, SiGe and SiGeC layers were fabricated and characterized. Cross-sectional transmission electron microscopy indicated that the SiGe layer with peak Ge concentration of 5 at% was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of Ge as a result of strain relaxation. Results of spreading resistance profiling were found to be consistent with the model of dopant deactivation due to Ge implantation and subsequent solid phase epitaxial growth of the amorphous layer. Furthermore, for unstrained SiGe layers (Ge peak concentration ≥7 at%), formation of donor complexes is indicated. Preliminary photoluminescence results correlate with the spreading resistance profiling results and indicate shallow donor complex formation.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Editors	M.A. Tischler, R.T. Collins, M.L.W. Thewalt, G. Abstreiter
Publisher	Publ by Materials Research Society
Pages	135-138
Number of pages	4
ISBN (Print)	1558991948
Publication status	Published - 1993
Event	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA Duration: 1993 Apr 12 → 1993 Apr 14

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	298
ISSN (Print)	0272-9172

Other

Other	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials
City	San Francisco, CA, USA
Period	93/4/12 → 93/4/14

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Gupta, A., Cheng, Y. W., Qiao, J., Rahman, M. M., Yang, C. Y., Im, S., Cheung, N. W., & Yu, P. K. L. (1993). Characterization of Ge and C implanted Si_1-XGe_x and Si_1-Y-ZGe_YC_Z layers. In M. A. Tischler, R. T. Collins, M. L. W. Thewalt, & G. Abstreiter (Eds.), Materials Research Society Symposium Proceedings (pp. 135-138). (Materials Research Society Symposium Proceedings; Vol. 298). Publ by Materials Research Society.

@inproceedings{ecfcdb5d4819462ea35e0d358d5563ca,

title = "Characterization of Ge and C implanted Si1-XGex and Si1-Y-ZGeYCZ layers",

abstract = "In an attempt to substantiate our previous findings of boron deactivation and/or donor complex formation due to high-dose Ge and C implantation, SiGe and SiGeC layers were fabricated and characterized. Cross-sectional transmission electron microscopy indicated that the SiGe layer with peak Ge concentration of 5 at% was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of Ge as a result of strain relaxation. Results of spreading resistance profiling were found to be consistent with the model of dopant deactivation due to Ge implantation and subsequent solid phase epitaxial growth of the amorphous layer. Furthermore, for unstrained SiGe layers (Ge peak concentration ≥7 at%), formation of donor complexes is indicated. Preliminary photoluminescence results correlate with the spreading resistance profiling results and indicate shallow donor complex formation.",

author = "Ashawant Gupta and Cheng, {Yao Wu} and Jianmin Qiao and Rahman, {M. Mahmudur} and Yang, {Cary Y.} and Seongil Im and Cheung, {Nathan W.} and Yu, {Paul K.L.}",

year = "1993",

language = "English",

isbn = "1558991948",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "135--138",

editor = "M.A. Tischler and R.T. Collins and M.L.W. Thewalt and G. Abstreiter",

booktitle = "Materials Research Society Symposium Proceedings",

note = "Proceedings of the Symposium on Silicon-Based Optoelectronic Materials ; Conference date: 12-04-1993 Through 14-04-1993",

}

Gupta, A, Cheng, YW, Qiao, J, Rahman, MM, Yang, CY, Im, S, Cheung, NW & Yu, PKL 1993, Characterization of Ge and C implanted Si_1-XGe_x and Si_1-Y-ZGe_YC_Z layers. in MA Tischler, RT Collins, MLW Thewalt & G Abstreiter (eds), Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 298, Publ by Materials Research Society, pp. 135-138, Proceedings of the Symposium on Silicon-Based Optoelectronic Materials, San Francisco, CA, USA, 93/4/12.

Characterization of Ge and C implanted Si_1-XGe_x and Si_1-Y-ZGe_YC_Z layers. / Gupta, Ashawant; Cheng, Yao Wu; Qiao, Jianmin et al.

Materials Research Society Symposium Proceedings. ed. / M.A. Tischler; R.T. Collins; M.L.W. Thewalt; G. Abstreiter. Publ by Materials Research Society, 1993. p. 135-138 (Materials Research Society Symposium Proceedings; Vol. 298).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Characterization of Ge and C implanted Si1-XGex and Si1-Y-ZGeYCZ layers

AU - Gupta, Ashawant

AU - Cheng, Yao Wu

AU - Qiao, Jianmin

AU - Rahman, M. Mahmudur

AU - Yang, Cary Y.

AU - Im, Seongil

AU - Cheung, Nathan W.

AU - Yu, Paul K.L.

PY - 1993

Y1 - 1993

N2 - In an attempt to substantiate our previous findings of boron deactivation and/or donor complex formation due to high-dose Ge and C implantation, SiGe and SiGeC layers were fabricated and characterized. Cross-sectional transmission electron microscopy indicated that the SiGe layer with peak Ge concentration of 5 at% was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of Ge as a result of strain relaxation. Results of spreading resistance profiling were found to be consistent with the model of dopant deactivation due to Ge implantation and subsequent solid phase epitaxial growth of the amorphous layer. Furthermore, for unstrained SiGe layers (Ge peak concentration ≥7 at%), formation of donor complexes is indicated. Preliminary photoluminescence results correlate with the spreading resistance profiling results and indicate shallow donor complex formation.

AB - In an attempt to substantiate our previous findings of boron deactivation and/or donor complex formation due to high-dose Ge and C implantation, SiGe and SiGeC layers were fabricated and characterized. Cross-sectional transmission electron microscopy indicated that the SiGe layer with peak Ge concentration of 5 at% was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of Ge as a result of strain relaxation. Results of spreading resistance profiling were found to be consistent with the model of dopant deactivation due to Ge implantation and subsequent solid phase epitaxial growth of the amorphous layer. Furthermore, for unstrained SiGe layers (Ge peak concentration ≥7 at%), formation of donor complexes is indicated. Preliminary photoluminescence results correlate with the spreading resistance profiling results and indicate shallow donor complex formation.

UR - http://www.scopus.com/inward/record.url?scp=0027806565&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027806565&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027806565

SN - 1558991948

T3 - Materials Research Society Symposium Proceedings

SP - 135

EP - 138

BT - Materials Research Society Symposium Proceedings

A2 - Tischler, M.A.

A2 - Collins, R.T.

A2 - Thewalt, M.L.W.

A2 - Abstreiter, G.

PB - Publ by Materials Research Society

T2 - Proceedings of the Symposium on Silicon-Based Optoelectronic Materials

Y2 - 12 April 1993 through 14 April 1993

ER -