Characterization of Ge and C implanted Si1-XGex and Si1-Y-ZGeYCZ layers

Ashawant Gupta, Yao Wu Cheng, Jianmin Qiao, M. Mahmudur Rahman, Cary Y. Yang, Seongil Im, Nathan W. Cheung, Paul K.L. Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


In an attempt to substantiate our previous findings of boron deactivation and/or donor complex formation due to high-dose Ge and C implantation, SiGe and SiGeC layers were fabricated and characterized. Cross-sectional transmission electron microscopy indicated that the SiGe layer with peak Ge concentration of 5 at% was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of Ge as a result of strain relaxation. Results of spreading resistance profiling were found to be consistent with the model of dopant deactivation due to Ge implantation and subsequent solid phase epitaxial growth of the amorphous layer. Furthermore, for unstrained SiGe layers (Ge peak concentration ≥7 at%), formation of donor complexes is indicated. Preliminary photoluminescence results correlate with the spreading resistance profiling results and indicate shallow donor complex formation.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsM.A. Tischler, R.T. Collins, M.L.W. Thewalt, G. Abstreiter
PublisherPubl by Materials Research Society
Number of pages4
ISBN (Print)1558991948
Publication statusPublished - 1993
EventProceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA
Duration: 1993 Apr 121993 Apr 14

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the Symposium on Silicon-Based Optoelectronic Materials
CitySan Francisco, CA, USA

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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