Characterization of HfO x N y thin film formation by in-situ plasma enhanced atomic layer deposition using NH 3 and N 2 plasmas

Young Bok Lee, Il Kwon Oh, Edward Namkyu Cho, Pyung Moon, Hyungjun Kim, Ilgu Yun

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The structural and electrical characteristics of in-situ nitrogen-incorporated plasma enhanced atomic layer deposition (PE-ALD) HfO x N y thin films using NH 3 and N 2 plasmas as reactants were comparatively studied. The HfO x N y test structures prepared using NH 3 and N 2 plasmas were analyzed by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and high resolution transmission electron microscopy (HR-TEM) to investigate the chemical composition, crystallinity, and cross-sectional layers including the interfacial layer, respectively. By utilizing NH 3 and N 2 plasmas, the nitrogen-incorporated HfO x N y thin films fabricated by in-situ PE-ALD showed a high dielectric constant and thermal stability, which suppresses the interfacial layer and increases the crystallization temperature. The high leakage current densities of the HfO x N y thin film test structures fabricated using NH 3 and N 2 plasmas caused by lowering the energy bandgap and band offset are related to the HfN bond ratio and dielectric constant.

Original languageEnglish
Pages (from-to)757-762
Number of pages6
JournalApplied Surface Science
Volume349
DOIs
Publication statusPublished - 2015 Sep 15

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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