Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas

Young Bok Lee, Il Kwon Oh, Edward Namkyu Cho, Pyung Moon, Hyungjun Kim, Ilgu Yun

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The structural and electrical characteristics of in-situ nitrogen-incorporated plasma enhanced atomic layer deposition (PE-ALD) HfOxNy thin films using NH3 and N2 plasmas as reactants were comparatively studied. The HfOxNy test structures prepared using NH3 and N2 plasmas were analyzed by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and high resolution transmission electron microscopy (HR-TEM) to investigate the chemical composition, crystallinity, and cross-sectional layers including the interfacial layer, respectively. By utilizing NH3 and N2 plasmas, the nitrogen-incorporated HfOxNy thin films fabricated by in-situ PE-ALD showed a high dielectric constant and thermal stability, which suppresses the interfacial layer and increases the crystallization temperature. The high leakage current densities of the HfOxNy thin film test structures fabricated using NH3 and N2 plasmas caused by lowering the energy bandgap and band offset are related to the HfN bond ratio and dielectric constant.

Original languageEnglish
Pages (from-to)757-762
Number of pages6
JournalApplied Surface Science
Volume349
DOIs
Publication statusPublished - 2015 Jan 1

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Atomic layer deposition
Plasmas
Thin films
Permittivity
Nitrogen plasma
High resolution transmission electron microscopy
Crystallization
Leakage currents
Energy gap
Thermodynamic stability
Current density
Nitrogen
X ray photoelectron spectroscopy
X ray diffraction
Chemical analysis
Temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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title = "Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas",
abstract = "The structural and electrical characteristics of in-situ nitrogen-incorporated plasma enhanced atomic layer deposition (PE-ALD) HfOxNy thin films using NH3 and N2 plasmas as reactants were comparatively studied. The HfOxNy test structures prepared using NH3 and N2 plasmas were analyzed by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and high resolution transmission electron microscopy (HR-TEM) to investigate the chemical composition, crystallinity, and cross-sectional layers including the interfacial layer, respectively. By utilizing NH3 and N2 plasmas, the nitrogen-incorporated HfOxNy thin films fabricated by in-situ PE-ALD showed a high dielectric constant and thermal stability, which suppresses the interfacial layer and increases the crystallization temperature. The high leakage current densities of the HfOxNy thin film test structures fabricated using NH3 and N2 plasmas caused by lowering the energy bandgap and band offset are related to the HfN bond ratio and dielectric constant.",
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Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas. / Lee, Young Bok; Oh, Il Kwon; Cho, Edward Namkyu; Moon, Pyung; Kim, Hyungjun; Yun, Ilgu.

In: Applied Surface Science, Vol. 349, 01.01.2015, p. 757-762.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Lee, Young Bok

AU - Oh, Il Kwon

AU - Cho, Edward Namkyu

AU - Moon, Pyung

AU - Kim, Hyungjun

AU - Yun, Ilgu

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AB - The structural and electrical characteristics of in-situ nitrogen-incorporated plasma enhanced atomic layer deposition (PE-ALD) HfOxNy thin films using NH3 and N2 plasmas as reactants were comparatively studied. The HfOxNy test structures prepared using NH3 and N2 plasmas were analyzed by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and high resolution transmission electron microscopy (HR-TEM) to investigate the chemical composition, crystallinity, and cross-sectional layers including the interfacial layer, respectively. By utilizing NH3 and N2 plasmas, the nitrogen-incorporated HfOxNy thin films fabricated by in-situ PE-ALD showed a high dielectric constant and thermal stability, which suppresses the interfacial layer and increases the crystallization temperature. The high leakage current densities of the HfOxNy thin film test structures fabricated using NH3 and N2 plasmas caused by lowering the energy bandgap and band offset are related to the HfN bond ratio and dielectric constant.

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