Characterization of in-situ synthesized CdSxSe1-x ternary alloy nanowire photosensor

Hong Rae Kim, Byoung Gi An, Young Wook Chang, Min Jung Kang, Jae Gwan Park, Jae Chul Pyun

Research output: Contribution to journalArticle

Abstract

CdSxSe1-x ternary alloy nanowires (x = 0, 0.5, 1.0) were fabricated by in-situ synthesis on interdigitated electrode. Morphology analysis of the alloy nanowires according to the synthesis zone and composition analysis of the nanowires were carried out by SEM and EDX. The crystal structures of the alloy nanowires were studied by XRD analysis. The I-V characteristics of the nanowire photosensors were analyzed according to the intensity of incident light. The influence of zonal synthesis position on the photosensor response to the wavelength of incident light was also analyzed, and was found to be related to the bandgap of alloy nanowires. The analysis results indicate that photosensors with a specific photoresponse could be selected based on the composition of the source materials of nanowires as well as by controlling the in-situ synthesis zone.

Original languageEnglish
Pages (from-to)308-316
Number of pages9
JournalJournal of the Korean Ceramic Society
Volume56
Issue number3
DOIs
Publication statusPublished - 2019 Jan 1

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Ternary alloys
Nanowires
Chemical analysis
Energy dispersive spectroscopy
Energy gap
Crystal structure
Wavelength
Scanning electron microscopy
Electrodes

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

Kim, Hong Rae ; An, Byoung Gi ; Chang, Young Wook ; Kang, Min Jung ; Park, Jae Gwan ; Pyun, Jae Chul. / Characterization of in-situ synthesized CdSxSe1-x ternary alloy nanowire photosensor. In: Journal of the Korean Ceramic Society. 2019 ; Vol. 56, No. 3. pp. 308-316.
@article{b44fee0ae7aa4905b72c8556a15ec54b,
title = "Characterization of in-situ synthesized CdSxSe1-x ternary alloy nanowire photosensor",
abstract = "CdSxSe1-x ternary alloy nanowires (x = 0, 0.5, 1.0) were fabricated by in-situ synthesis on interdigitated electrode. Morphology analysis of the alloy nanowires according to the synthesis zone and composition analysis of the nanowires were carried out by SEM and EDX. The crystal structures of the alloy nanowires were studied by XRD analysis. The I-V characteristics of the nanowire photosensors were analyzed according to the intensity of incident light. The influence of zonal synthesis position on the photosensor response to the wavelength of incident light was also analyzed, and was found to be related to the bandgap of alloy nanowires. The analysis results indicate that photosensors with a specific photoresponse could be selected based on the composition of the source materials of nanowires as well as by controlling the in-situ synthesis zone.",
author = "Kim, {Hong Rae} and An, {Byoung Gi} and Chang, {Young Wook} and Kang, {Min Jung} and Park, {Jae Gwan} and Pyun, {Jae Chul}",
year = "2019",
month = "1",
day = "1",
doi = "10.4191/kcers.2019.56.3.10",
language = "English",
volume = "56",
pages = "308--316",
journal = "Journal of the Korean Ceramic Society",
issn = "1229-7801",
publisher = "Korean Ceramic Society",
number = "3",

}

Characterization of in-situ synthesized CdSxSe1-x ternary alloy nanowire photosensor. / Kim, Hong Rae; An, Byoung Gi; Chang, Young Wook; Kang, Min Jung; Park, Jae Gwan; Pyun, Jae Chul.

In: Journal of the Korean Ceramic Society, Vol. 56, No. 3, 01.01.2019, p. 308-316.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characterization of in-situ synthesized CdSxSe1-x ternary alloy nanowire photosensor

AU - Kim, Hong Rae

AU - An, Byoung Gi

AU - Chang, Young Wook

AU - Kang, Min Jung

AU - Park, Jae Gwan

AU - Pyun, Jae Chul

PY - 2019/1/1

Y1 - 2019/1/1

N2 - CdSxSe1-x ternary alloy nanowires (x = 0, 0.5, 1.0) were fabricated by in-situ synthesis on interdigitated electrode. Morphology analysis of the alloy nanowires according to the synthesis zone and composition analysis of the nanowires were carried out by SEM and EDX. The crystal structures of the alloy nanowires were studied by XRD analysis. The I-V characteristics of the nanowire photosensors were analyzed according to the intensity of incident light. The influence of zonal synthesis position on the photosensor response to the wavelength of incident light was also analyzed, and was found to be related to the bandgap of alloy nanowires. The analysis results indicate that photosensors with a specific photoresponse could be selected based on the composition of the source materials of nanowires as well as by controlling the in-situ synthesis zone.

AB - CdSxSe1-x ternary alloy nanowires (x = 0, 0.5, 1.0) were fabricated by in-situ synthesis on interdigitated electrode. Morphology analysis of the alloy nanowires according to the synthesis zone and composition analysis of the nanowires were carried out by SEM and EDX. The crystal structures of the alloy nanowires were studied by XRD analysis. The I-V characteristics of the nanowire photosensors were analyzed according to the intensity of incident light. The influence of zonal synthesis position on the photosensor response to the wavelength of incident light was also analyzed, and was found to be related to the bandgap of alloy nanowires. The analysis results indicate that photosensors with a specific photoresponse could be selected based on the composition of the source materials of nanowires as well as by controlling the in-situ synthesis zone.

UR - http://www.scopus.com/inward/record.url?scp=85070792845&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85070792845&partnerID=8YFLogxK

U2 - 10.4191/kcers.2019.56.3.10

DO - 10.4191/kcers.2019.56.3.10

M3 - Article

AN - SCOPUS:85070792845

VL - 56

SP - 308

EP - 316

JO - Journal of the Korean Ceramic Society

JF - Journal of the Korean Ceramic Society

SN - 1229-7801

IS - 3

ER -