Characterization of pentacene organic thin film transistors fabricated on SiN x films by non-photolithographic processes

M. H. Choo, W. S. Hong, Seongil Im

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Non-photolithographic organic thin film transistors (OTFTs) were fabricated using pentacene and SiN x films on p-Si (100) at room temperature to investigate both the effects of their device structure (two different types of OTFTs, top-electrode and bottom-electrode) and the pentacene film deposition-rate on their current-voltage characteristics. OTFTs of the top-electrode type were prepared by thermal evaporation at various deposition rates of 1, 3, 5 and 7 Å/s. The top-electrode OTFTs exhibited 40 times higher amount of currents than the bottom-electrode OTFTs at the same bias conditions. An optimum OTFT was obtained using 5 Å/s and exhibited the saturation current, I D of approximately 4 μA at a gate bias of -40 V along with the field effect mobility of ∼0.046 cm 2 /Vs and the on/off current ratio of ∼10 5 .

Original languageEnglish
Pages (from-to)492-496
Number of pages5
JournalThin Solid Films
Volume420-421
DOIs
Publication statusPublished - 2002 Dec 2

Fingerprint

Thin film transistors
transistors
thin films
Electrodes
electrodes
Deposition rates
Thermal evaporation
Current voltage characteristics
pentacene
evaporation
saturation
electric potential
room temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Characterization of pentacene organic thin film transistors fabricated on SiN x films by non-photolithographic processes",
abstract = "Non-photolithographic organic thin film transistors (OTFTs) were fabricated using pentacene and SiN x films on p-Si (100) at room temperature to investigate both the effects of their device structure (two different types of OTFTs, top-electrode and bottom-electrode) and the pentacene film deposition-rate on their current-voltage characteristics. OTFTs of the top-electrode type were prepared by thermal evaporation at various deposition rates of 1, 3, 5 and 7 {\AA}/s. The top-electrode OTFTs exhibited 40 times higher amount of currents than the bottom-electrode OTFTs at the same bias conditions. An optimum OTFT was obtained using 5 {\AA}/s and exhibited the saturation current, I D of approximately 4 μA at a gate bias of -40 V along with the field effect mobility of ∼0.046 cm 2 /Vs and the on/off current ratio of ∼10 5 .",
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Characterization of pentacene organic thin film transistors fabricated on SiN x films by non-photolithographic processes . / Choo, M. H.; Hong, W. S.; Im, Seongil.

In: Thin Solid Films, Vol. 420-421, 02.12.2002, p. 492-496.

Research output: Contribution to journalArticle

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