Characterization of pentacene organic thin film transistors fabricated on SiNx films by non-photolithographic processes

M. H. Choo, W. S. Hong, Seongil Im

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27 Citations (Scopus)

Abstract

Non-photolithographic organic thin film transistors (OTFTs) were fabricated using pentacene and SiNx films on p-Si (100) at room temperature to investigate both the effects of their device structure (two different types of OTFTs, top-electrode and bottom-electrode) and the pentacene film deposition-rate on their current-voltage characteristics. OTFTs of the top-electrode type were prepared by thermal evaporation at various deposition rates of 1, 3, 5 and 7 Å/s. The top-electrode OTFTs exhibited 40 times higher amount of currents than the bottom-electrode OTFTs at the same bias conditions. An optimum OTFT was obtained using 5 Å/s and exhibited the saturation current, ID of approximately 4 μA at a gate bias of -40 V along with the field effect mobility of ∼0.046 cm2/Vs and the on/off current ratio of ∼105.

Original languageEnglish
Pages (from-to)492-496
Number of pages5
JournalThin Solid Films
Volume420-421
DOIs
Publication statusPublished - 2002 Dec 2

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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