Abstract
We studied the phase-change behavior of Ge2Sb2Te5, which is a chalcogenide material widely used in phase-change memory, using precisely controlled electrical pulses to improve the efficiency of the switching operation. The electrical pulse is a critical parameter that supplies source energy to reversibly switch the phase of the material between amorphous and crystalline. The electrical pulse conditions are classified into rising time, setting time (ST) and falling time (FT). We investigated the individual influence of each step on the phase of the material with fine nanoscale pulses. We also studied the complex influence of the ratio of ST and FT to investigate the correlation among the steps. The result showed that the state of the phase-change material and electrical properties were significantly determined according to the specific condition of the pulse. Furthermore, we used transmission electron microscopy to observe the cross-sectional images of the material to confirm these phenomena. Finally, retention cycling tests were performed to elucidate the most stable conditions of the material with respect to the specific ratio of the electrical pulses. The results indicated that the FT should be more than double the ST for the SET operation and more than 10% of the ST for the RESET operation.
| Original language | English |
|---|---|
| Article number | 095006 |
| Journal | Semiconductor Science and Technology |
| Volume | 31 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2016 Aug 10 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
}
Characterization of phase-change behavior of a Ge2Sb2Te5 thin film using finely controlled electrical pulses for switching. / Lee, Hyun Cheol; Jeong, Jin Hwan; Choi, Doo Jin.
In: Semiconductor Science and Technology, Vol. 31, No. 9, 095006, 10.08.2016.Research output: Contribution to journal › Article
TY - JOUR
T1 - Characterization of phase-change behavior of a Ge2Sb2Te5 thin film using finely controlled electrical pulses for switching
AU - Lee, Hyun Cheol
AU - Jeong, Jin Hwan
AU - Choi, Doo Jin
PY - 2016/8/10
Y1 - 2016/8/10
N2 - We studied the phase-change behavior of Ge2Sb2Te5, which is a chalcogenide material widely used in phase-change memory, using precisely controlled electrical pulses to improve the efficiency of the switching operation. The electrical pulse is a critical parameter that supplies source energy to reversibly switch the phase of the material between amorphous and crystalline. The electrical pulse conditions are classified into rising time, setting time (ST) and falling time (FT). We investigated the individual influence of each step on the phase of the material with fine nanoscale pulses. We also studied the complex influence of the ratio of ST and FT to investigate the correlation among the steps. The result showed that the state of the phase-change material and electrical properties were significantly determined according to the specific condition of the pulse. Furthermore, we used transmission electron microscopy to observe the cross-sectional images of the material to confirm these phenomena. Finally, retention cycling tests were performed to elucidate the most stable conditions of the material with respect to the specific ratio of the electrical pulses. The results indicated that the FT should be more than double the ST for the SET operation and more than 10% of the ST for the RESET operation.
AB - We studied the phase-change behavior of Ge2Sb2Te5, which is a chalcogenide material widely used in phase-change memory, using precisely controlled electrical pulses to improve the efficiency of the switching operation. The electrical pulse is a critical parameter that supplies source energy to reversibly switch the phase of the material between amorphous and crystalline. The electrical pulse conditions are classified into rising time, setting time (ST) and falling time (FT). We investigated the individual influence of each step on the phase of the material with fine nanoscale pulses. We also studied the complex influence of the ratio of ST and FT to investigate the correlation among the steps. The result showed that the state of the phase-change material and electrical properties were significantly determined according to the specific condition of the pulse. Furthermore, we used transmission electron microscopy to observe the cross-sectional images of the material to confirm these phenomena. Finally, retention cycling tests were performed to elucidate the most stable conditions of the material with respect to the specific ratio of the electrical pulses. The results indicated that the FT should be more than double the ST for the SET operation and more than 10% of the ST for the RESET operation.
UR - http://www.scopus.com/inward/record.url?scp=84988429271&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84988429271&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/31/9/095006
DO - 10.1088/0268-1242/31/9/095006
M3 - Article
VL - 31
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 9
M1 - 095006
ER -