Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors

Hyo Soon Kang; Chang Soon Choi; Woo Young Choi; Dae Hyun Kim; Kwang Seok Seo

doi:10.1063/1.1739278

Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors

Hyo Soon Kang, Chang Soon Choi, Woo Young Choi, Dae Hyun Kim, Kwang Seok Seo

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

The phototransistor internal gain in metamorphic high-electron-mobility transistors (mHEMT) was analyzed. The phototransistor internal gain was determined by estimating the primary photocurrents that were due to absorbed optical power from the device when it acted as a photodetector. It was observed that the dominant photodetection mechanism was the photocunductive effect when the device was turn-off and photovoltaic effect when the device was turned-on. It was observed that the phototransistor internal gain was represented by the ratio between the photodetected power and absorbed optical power due to the photovoltaic effects.

Original language	English
Pages (from-to)	3780-3782
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	19
DOIs	https://doi.org/10.1063/1.1739278
Publication status	Published - 2004 May 10

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Physics and Astronomy (miscellaneous)

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abstract = "The phototransistor internal gain in metamorphic high-electron-mobility transistors (mHEMT) was analyzed. The phototransistor internal gain was determined by estimating the primary photocurrents that were due to absorbed optical power from the device when it acted as a photodetector. It was observed that the dominant photodetection mechanism was the photocunductive effect when the device was turn-off and photovoltaic effect when the device was turned-on. It was observed that the phototransistor internal gain was represented by the ratio between the photodetected power and absorbed optical power due to the photovoltaic effects.",

author = "Kang, {Hyo Soon} and Choi, {Chang Soon} and Choi, {Woo Young} and Kim, {Dae Hyun} and Seo, {Kwang Seok}",

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AU - Kang, Hyo Soon

AU - Choi, Chang Soon

AU - Choi, Woo Young

AU - Kim, Dae Hyun

AU - Seo, Kwang Seok

PY - 2004/5/10

Y1 - 2004/5/10

N2 - The phototransistor internal gain in metamorphic high-electron-mobility transistors (mHEMT) was analyzed. The phototransistor internal gain was determined by estimating the primary photocurrents that were due to absorbed optical power from the device when it acted as a photodetector. It was observed that the dominant photodetection mechanism was the photocunductive effect when the device was turn-off and photovoltaic effect when the device was turned-on. It was observed that the phototransistor internal gain was represented by the ratio between the photodetected power and absorbed optical power due to the photovoltaic effects.

AB - The phototransistor internal gain in metamorphic high-electron-mobility transistors (mHEMT) was analyzed. The phototransistor internal gain was determined by estimating the primary photocurrents that were due to absorbed optical power from the device when it acted as a photodetector. It was observed that the dominant photodetection mechanism was the photocunductive effect when the device was turn-off and photovoltaic effect when the device was turned-on. It was observed that the phototransistor internal gain was represented by the ratio between the photodetected power and absorbed optical power due to the photovoltaic effects.

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Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors

Abstract

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