Abstract
The phototransistor internal gain in metamorphic high-electron-mobility transistors (mHEMT) was analyzed. The phototransistor internal gain was determined by estimating the primary photocurrents that were due to absorbed optical power from the device when it acted as a photodetector. It was observed that the dominant photodetection mechanism was the photocunductive effect when the device was turn-off and photovoltaic effect when the device was turned-on. It was observed that the phototransistor internal gain was represented by the ratio between the photodetected power and absorbed optical power due to the photovoltaic effects.
| Original language | English |
|---|---|
| Pages (from-to) | 3780-3782 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 84 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 2004 May 10 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors. / Kang, Hyo Soon; Choi, Chang Soon; Choi, Woo-Young; Kim, Dae Hyun; Seo, Kwang Seok.
In: Applied Physics Letters, Vol. 84, No. 19, 10.05.2004, p. 3780-3782.Research output: Contribution to journal › Article
TY - JOUR
T1 - Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors
AU - Kang, Hyo Soon
AU - Choi, Chang Soon
AU - Choi, Woo-Young
AU - Kim, Dae Hyun
AU - Seo, Kwang Seok
PY - 2004/5/10
Y1 - 2004/5/10
N2 - The phototransistor internal gain in metamorphic high-electron-mobility transistors (mHEMT) was analyzed. The phototransistor internal gain was determined by estimating the primary photocurrents that were due to absorbed optical power from the device when it acted as a photodetector. It was observed that the dominant photodetection mechanism was the photocunductive effect when the device was turn-off and photovoltaic effect when the device was turned-on. It was observed that the phototransistor internal gain was represented by the ratio between the photodetected power and absorbed optical power due to the photovoltaic effects.
AB - The phototransistor internal gain in metamorphic high-electron-mobility transistors (mHEMT) was analyzed. The phototransistor internal gain was determined by estimating the primary photocurrents that were due to absorbed optical power from the device when it acted as a photodetector. It was observed that the dominant photodetection mechanism was the photocunductive effect when the device was turn-off and photovoltaic effect when the device was turned-on. It was observed that the phototransistor internal gain was represented by the ratio between the photodetected power and absorbed optical power due to the photovoltaic effects.
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U2 - 10.1063/1.1739278
DO - 10.1063/1.1739278
M3 - Article
VL - 84
SP - 3780
EP - 3782
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 19
ER -