Abstract
The phototransistor internal gain in metamorphic high-electron-mobility transistors (mHEMT) was analyzed. The phototransistor internal gain was determined by estimating the primary photocurrents that were due to absorbed optical power from the device when it acted as a photodetector. It was observed that the dominant photodetection mechanism was the photocunductive effect when the device was turn-off and photovoltaic effect when the device was turned-on. It was observed that the phototransistor internal gain was represented by the ratio between the photodetected power and absorbed optical power due to the photovoltaic effects.
| Original language | English |
|---|---|
| Pages (from-to) | 3780-3782 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 84 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 2004 May 10 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Kang, H. S., Choi, C. S., Choi, W. Y., Kim, D. H., & Seo, K. S. (2004). Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors. Applied Physics Letters, 84(19), 3780-3782. https://doi.org/10.1063/1.1739278