Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors

Hyo Soon Kang, Chang Soon Choi, Woo Young Choi, Dae Hyun Kim, Kwang Seok Seo

Research output: Contribution to journalArticle

74 Citations (Scopus)

Abstract

The phototransistor internal gain in metamorphic high-electron-mobility transistors (mHEMT) was analyzed. The phototransistor internal gain was determined by estimating the primary photocurrents that were due to absorbed optical power from the device when it acted as a photodetector. It was observed that the dominant photodetection mechanism was the photocunductive effect when the device was turn-off and photovoltaic effect when the device was turned-on. It was observed that the phototransistor internal gain was represented by the ratio between the photodetected power and absorbed optical power due to the photovoltaic effects.

Original languageEnglish
Pages (from-to)3780-3782
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number19
DOIs
Publication statusPublished - 2004 May 10

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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