Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors

Hyo Soon Kang, Chang Soon Choi, Woo-Young Choi, Dae Hyun Kim, Kwang Seok Seo

Research output: Contribution to journalArticle

68 Citations (Scopus)

Abstract

The phototransistor internal gain in metamorphic high-electron-mobility transistors (mHEMT) was analyzed. The phototransistor internal gain was determined by estimating the primary photocurrents that were due to absorbed optical power from the device when it acted as a photodetector. It was observed that the dominant photodetection mechanism was the photocunductive effect when the device was turn-off and photovoltaic effect when the device was turned-on. It was observed that the phototransistor internal gain was represented by the ratio between the photodetected power and absorbed optical power due to the photovoltaic effects.

Original languageEnglish
Pages (from-to)3780-3782
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number19
DOIs
Publication statusPublished - 2004 May 10

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phototransistors
high electron mobility transistors
photovoltaic effect
photocurrents
photometers
estimating

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kang, Hyo Soon ; Choi, Chang Soon ; Choi, Woo-Young ; Kim, Dae Hyun ; Seo, Kwang Seok. / Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors. In: Applied Physics Letters. 2004 ; Vol. 84, No. 19. pp. 3780-3782.
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Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors. / Kang, Hyo Soon; Choi, Chang Soon; Choi, Woo-Young; Kim, Dae Hyun; Seo, Kwang Seok.

In: Applied Physics Letters, Vol. 84, No. 19, 10.05.2004, p. 3780-3782.

Research output: Contribution to journalArticle

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