Characterization of PLZT thin film prepared by photochemical deposition using photosensitive metal-organic precursors

Hyeong Ho Park, Woo Sik Kim, Jun Kyu Yang, Hyung-Ho Park, Ross H. Hill

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The electrical properties of lanthanum doped lead zirconate titanate (PLZT) thin films prepared by photochemical metal-organic deposition (PMOD) using photosensitive starting precursors have been characterized. PLZT films with various La concentration were prepared by PMOD on Si(1 0 0) for observing the image of self-patterned PLZT film or on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) for ferroelectric properties measurement. Even though PLZT film with 0 mol% of La, strictly PZT, showed an asymmetric behavior in polarization-voltage (P-E) relation, PLZT film by doping La showed symmetric behavior in P-E relation. The amelioration of electric and ferroelectric properties with increased substitution of La in PLZT film was observed, especially with 3 mol% La doped PLZT film, the most characteristic P-E hysteresis loop in the point of imprint property was obtained with comparatively large remnant polarization, 30 μC/cm2 at 15 V. Also, capacitance and leakage current behavior of PLZT film were revealed to be sensitive to the contents of La.

Original languageEnglish
Pages (from-to)215-220
Number of pages6
JournalMicroelectronic Engineering
Volume71
Issue number2
DOIs
Publication statusPublished - 2004 Feb 1

Fingerprint

Lanthanum
lanthanum
Lead
Metals
Thin films
thin films
metals
Polarization
Ferroelectric materials
Electric potential
electric potential
polarization
lead titanate zirconate
Hysteresis loops
Leakage currents
polarization characteristics
Electric properties
Substitution reactions
Capacitance
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Park, Hyeong Ho ; Kim, Woo Sik ; Yang, Jun Kyu ; Park, Hyung-Ho ; Hill, Ross H. / Characterization of PLZT thin film prepared by photochemical deposition using photosensitive metal-organic precursors. In: Microelectronic Engineering. 2004 ; Vol. 71, No. 2. pp. 215-220.
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Characterization of PLZT thin film prepared by photochemical deposition using photosensitive metal-organic precursors. / Park, Hyeong Ho; Kim, Woo Sik; Yang, Jun Kyu; Park, Hyung-Ho; Hill, Ross H.

In: Microelectronic Engineering, Vol. 71, No. 2, 01.02.2004, p. 215-220.

Research output: Contribution to journalArticle

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T1 - Characterization of PLZT thin film prepared by photochemical deposition using photosensitive metal-organic precursors

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N2 - The electrical properties of lanthanum doped lead zirconate titanate (PLZT) thin films prepared by photochemical metal-organic deposition (PMOD) using photosensitive starting precursors have been characterized. PLZT films with various La concentration were prepared by PMOD on Si(1 0 0) for observing the image of self-patterned PLZT film or on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) for ferroelectric properties measurement. Even though PLZT film with 0 mol% of La, strictly PZT, showed an asymmetric behavior in polarization-voltage (P-E) relation, PLZT film by doping La showed symmetric behavior in P-E relation. The amelioration of electric and ferroelectric properties with increased substitution of La in PLZT film was observed, especially with 3 mol% La doped PLZT film, the most characteristic P-E hysteresis loop in the point of imprint property was obtained with comparatively large remnant polarization, 30 μC/cm2 at 15 V. Also, capacitance and leakage current behavior of PLZT film were revealed to be sensitive to the contents of La.

AB - The electrical properties of lanthanum doped lead zirconate titanate (PLZT) thin films prepared by photochemical metal-organic deposition (PMOD) using photosensitive starting precursors have been characterized. PLZT films with various La concentration were prepared by PMOD on Si(1 0 0) for observing the image of self-patterned PLZT film or on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) for ferroelectric properties measurement. Even though PLZT film with 0 mol% of La, strictly PZT, showed an asymmetric behavior in polarization-voltage (P-E) relation, PLZT film by doping La showed symmetric behavior in P-E relation. The amelioration of electric and ferroelectric properties with increased substitution of La in PLZT film was observed, especially with 3 mol% La doped PLZT film, the most characteristic P-E hysteresis loop in the point of imprint property was obtained with comparatively large remnant polarization, 30 μC/cm2 at 15 V. Also, capacitance and leakage current behavior of PLZT film were revealed to be sensitive to the contents of La.

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