We present the characterization of poly-Si TFT fabricated below 170°C on plastic substrate using excimer laser crystallization of Xe sputtered Si films and gate insulator by using inductively coupled plasma CVD. In addition, stability and uniformity of TFT array between before and after sintering will be compared.
|Number of pages||3|
|Publication status||Published - 2005 Dec 1|
|Event||IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan|
Duration: 2005 Dec 6 → 2005 Dec 9
|Other||IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005|
|Period||05/12/6 → 05/12/9|
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