Characterization of residual strain in epitaxial Ge layers grown in sub-100 nm width SiO 2 trench arrays

Byongju Kim, Hyunchul Jang, Sangmo Koo, Jeong Hoon Kim, Dae Hyun Kim, Byoung Gi Min, Jason S. Song, Dae Hong Ko

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We examined the selective epitaxial growth of Ge on Si(001) substrates with 40, 65, and 90 nm width trench arrays by ultra-high vacuum chemical vapor deposition. Because SiO 2 trench walls were present, no surface undulation in the direction parallel to the trenches was observed and compressive strain developed in the same direction. Based on reciprocal space mapping (RSM) measurements, this strain along the parallel direction increased from - 0.28 to - 0.72% as the width of the exposed Si substrate between the SiO 2 walls decreased from 90 to 40 nm, which was due to a decrease in strain relaxation. We calculated the effect of the Si trench width on changes in strain after removing the SiO 2 walls and compared the calculated values with the RSM results. No significant change in the strain relaxation was detected along the direction perpendicular to the trenches, and the strain changes were < 0.1%.

Original languageEnglish
Pages (from-to)45-51
Number of pages7
JournalThin Solid Films
Volume580
DOIs
Publication statusPublished - 2015 Apr 1

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Strain relaxation
Strain measurement
Ultrahigh vacuum
Substrates
Epitaxial growth
strain measurement
Chemical vapor deposition
ultrahigh vacuum
vapor deposition
Direction compound

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, Byongju ; Jang, Hyunchul ; Koo, Sangmo ; Kim, Jeong Hoon ; Kim, Dae Hyun ; Min, Byoung Gi ; Song, Jason S. ; Ko, Dae Hong. / Characterization of residual strain in epitaxial Ge layers grown in sub-100 nm width SiO 2 trench arrays In: Thin Solid Films. 2015 ; Vol. 580. pp. 45-51.
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abstract = "We examined the selective epitaxial growth of Ge on Si(001) substrates with 40, 65, and 90 nm width trench arrays by ultra-high vacuum chemical vapor deposition. Because SiO 2 trench walls were present, no surface undulation in the direction parallel to the trenches was observed and compressive strain developed in the same direction. Based on reciprocal space mapping (RSM) measurements, this strain along the parallel direction increased from - 0.28 to - 0.72{\%} as the width of the exposed Si substrate between the SiO 2 walls decreased from 90 to 40 nm, which was due to a decrease in strain relaxation. We calculated the effect of the Si trench width on changes in strain after removing the SiO 2 walls and compared the calculated values with the RSM results. No significant change in the strain relaxation was detected along the direction perpendicular to the trenches, and the strain changes were < 0.1{\%}.",
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Characterization of residual strain in epitaxial Ge layers grown in sub-100 nm width SiO 2 trench arrays . / Kim, Byongju; Jang, Hyunchul; Koo, Sangmo; Kim, Jeong Hoon; Kim, Dae Hyun; Min, Byoung Gi; Song, Jason S.; Ko, Dae Hong.

In: Thin Solid Films, Vol. 580, 01.04.2015, p. 45-51.

Research output: Contribution to journalArticle

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AU - Jang, Hyunchul

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AU - Kim, Jeong Hoon

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AU - Min, Byoung Gi

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AU - Ko, Dae Hong

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AB - We examined the selective epitaxial growth of Ge on Si(001) substrates with 40, 65, and 90 nm width trench arrays by ultra-high vacuum chemical vapor deposition. Because SiO 2 trench walls were present, no surface undulation in the direction parallel to the trenches was observed and compressive strain developed in the same direction. Based on reciprocal space mapping (RSM) measurements, this strain along the parallel direction increased from - 0.28 to - 0.72% as the width of the exposed Si substrate between the SiO 2 walls decreased from 90 to 40 nm, which was due to a decrease in strain relaxation. We calculated the effect of the Si trench width on changes in strain after removing the SiO 2 walls and compared the calculated values with the RSM results. No significant change in the strain relaxation was detected along the direction perpendicular to the trenches, and the strain changes were < 0.1%.

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