Characterization of Rotational Stacking Layers in Large-Area MoSe 2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon

Yoon Ho Choi, Dong Hyeok Lim, Jae Hun Jeong, Dambi Park, Kwang Sik Jeong, Minju Kim, Aeran Song, Hee Suk Chung, Kwun Bum Chung, Yeonjin Yi, Mann-Ho Cho

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Transition metal dichalcogenides (TMDCs) are promising next-generation materials for optoelectronic devices because, at subnanometer thicknesses, they have a transparency, flexibility, and band gap in the near-infrared to visible light range. In this study, we examined continuous, large-area MoSe 2 film, grown by molecular beam epitaxy on an amorphous SiO 2 /Si substrate, which facilitated direct device fabrication without exfoliation. Spectroscopic measurements were implemented to verify the formation of a homogeneous MoSe 2 film by performing mapping on the micrometer scale and measurements at multiple positions. The crystalline structure of the film showed hexagonal (2H) rotationally stacked layers. The local strain at the grain boundaries was mapped using a geometric phase analysis, which showed a higher strain for a 30° twist angle compared to a 13° angle. Furthermore, the photon-matter interaction for the rotational stacking structures was investigated as a function of the number of layers using spectroscopic ellipsometry. The optical band gap for the grown MoSe 2 was in the near-infrared range, 1.24-1.39 eV. As the film thickness increased, the band gap energy decreased. The atomically controlled thin MoSe 2 showed promise for application to nanoelectronics, photodetectors, light emitting diodes, and valleytronics.

Original languageEnglish
Pages (from-to)30786-30796
Number of pages11
JournalACS Applied Materials and Interfaces
Volume9
Issue number36
DOIs
Publication statusPublished - 2017 Sep 13

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Molecular beam epitaxy
Photons
Energy gap
Infrared radiation
Nanoelectronics
Spectroscopic ellipsometry
Optical band gaps
Photodetectors
Optoelectronic devices
Transparency
Transition metals
Light emitting diodes
Film thickness
Grain boundaries
Crystalline materials
Fabrication
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Choi, Yoon Ho ; Lim, Dong Hyeok ; Jeong, Jae Hun ; Park, Dambi ; Jeong, Kwang Sik ; Kim, Minju ; Song, Aeran ; Chung, Hee Suk ; Chung, Kwun Bum ; Yi, Yeonjin ; Cho, Mann-Ho. / Characterization of Rotational Stacking Layers in Large-Area MoSe 2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon In: ACS Applied Materials and Interfaces. 2017 ; Vol. 9, No. 36. pp. 30786-30796.
@article{6c4f755eb316456db5d3f6192ed9df25,
title = "Characterization of Rotational Stacking Layers in Large-Area MoSe 2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon",
abstract = "Transition metal dichalcogenides (TMDCs) are promising next-generation materials for optoelectronic devices because, at subnanometer thicknesses, they have a transparency, flexibility, and band gap in the near-infrared to visible light range. In this study, we examined continuous, large-area MoSe 2 film, grown by molecular beam epitaxy on an amorphous SiO 2 /Si substrate, which facilitated direct device fabrication without exfoliation. Spectroscopic measurements were implemented to verify the formation of a homogeneous MoSe 2 film by performing mapping on the micrometer scale and measurements at multiple positions. The crystalline structure of the film showed hexagonal (2H) rotationally stacked layers. The local strain at the grain boundaries was mapped using a geometric phase analysis, which showed a higher strain for a 30° twist angle compared to a 13° angle. Furthermore, the photon-matter interaction for the rotational stacking structures was investigated as a function of the number of layers using spectroscopic ellipsometry. The optical band gap for the grown MoSe 2 was in the near-infrared range, 1.24-1.39 eV. As the film thickness increased, the band gap energy decreased. The atomically controlled thin MoSe 2 showed promise for application to nanoelectronics, photodetectors, light emitting diodes, and valleytronics.",
author = "Choi, {Yoon Ho} and Lim, {Dong Hyeok} and Jeong, {Jae Hun} and Dambi Park and Jeong, {Kwang Sik} and Minju Kim and Aeran Song and Chung, {Hee Suk} and Chung, {Kwun Bum} and Yeonjin Yi and Mann-Ho Cho",
year = "2017",
month = "9",
day = "13",
doi = "10.1021/acsami.7b05475",
language = "English",
volume = "9",
pages = "30786--30796",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "36",

}

Characterization of Rotational Stacking Layers in Large-Area MoSe 2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon . / Choi, Yoon Ho; Lim, Dong Hyeok; Jeong, Jae Hun; Park, Dambi; Jeong, Kwang Sik; Kim, Minju; Song, Aeran; Chung, Hee Suk; Chung, Kwun Bum; Yi, Yeonjin; Cho, Mann-Ho.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 36, 13.09.2017, p. 30786-30796.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characterization of Rotational Stacking Layers in Large-Area MoSe 2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon

AU - Choi, Yoon Ho

AU - Lim, Dong Hyeok

AU - Jeong, Jae Hun

AU - Park, Dambi

AU - Jeong, Kwang Sik

AU - Kim, Minju

AU - Song, Aeran

AU - Chung, Hee Suk

AU - Chung, Kwun Bum

AU - Yi, Yeonjin

AU - Cho, Mann-Ho

PY - 2017/9/13

Y1 - 2017/9/13

N2 - Transition metal dichalcogenides (TMDCs) are promising next-generation materials for optoelectronic devices because, at subnanometer thicknesses, they have a transparency, flexibility, and band gap in the near-infrared to visible light range. In this study, we examined continuous, large-area MoSe 2 film, grown by molecular beam epitaxy on an amorphous SiO 2 /Si substrate, which facilitated direct device fabrication without exfoliation. Spectroscopic measurements were implemented to verify the formation of a homogeneous MoSe 2 film by performing mapping on the micrometer scale and measurements at multiple positions. The crystalline structure of the film showed hexagonal (2H) rotationally stacked layers. The local strain at the grain boundaries was mapped using a geometric phase analysis, which showed a higher strain for a 30° twist angle compared to a 13° angle. Furthermore, the photon-matter interaction for the rotational stacking structures was investigated as a function of the number of layers using spectroscopic ellipsometry. The optical band gap for the grown MoSe 2 was in the near-infrared range, 1.24-1.39 eV. As the film thickness increased, the band gap energy decreased. The atomically controlled thin MoSe 2 showed promise for application to nanoelectronics, photodetectors, light emitting diodes, and valleytronics.

AB - Transition metal dichalcogenides (TMDCs) are promising next-generation materials for optoelectronic devices because, at subnanometer thicknesses, they have a transparency, flexibility, and band gap in the near-infrared to visible light range. In this study, we examined continuous, large-area MoSe 2 film, grown by molecular beam epitaxy on an amorphous SiO 2 /Si substrate, which facilitated direct device fabrication without exfoliation. Spectroscopic measurements were implemented to verify the formation of a homogeneous MoSe 2 film by performing mapping on the micrometer scale and measurements at multiple positions. The crystalline structure of the film showed hexagonal (2H) rotationally stacked layers. The local strain at the grain boundaries was mapped using a geometric phase analysis, which showed a higher strain for a 30° twist angle compared to a 13° angle. Furthermore, the photon-matter interaction for the rotational stacking structures was investigated as a function of the number of layers using spectroscopic ellipsometry. The optical band gap for the grown MoSe 2 was in the near-infrared range, 1.24-1.39 eV. As the film thickness increased, the band gap energy decreased. The atomically controlled thin MoSe 2 showed promise for application to nanoelectronics, photodetectors, light emitting diodes, and valleytronics.

UR - http://www.scopus.com/inward/record.url?scp=85029492235&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85029492235&partnerID=8YFLogxK

U2 - 10.1021/acsami.7b05475

DO - 10.1021/acsami.7b05475

M3 - Article

VL - 9

SP - 30786

EP - 30796

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 36

ER -