Characterization of SiC:H films deposited using HMDS precursor with C 2H2 dilution gas by remote PECVD system

Sung Hyuk Cho, Doo Jin Choi

Research output: Contribution to journalArticle

Abstract

Amorphous SiC:H films were deposited on (100) silicon wafer by remote-Plasma Enhanced Chemical Vapor Deposition system in the temperature range of 400°C-450°C. Hexamethyldisilane (HMDS) and C2H 2 gas were used as a precursor and a dilution gas, respectively. The lower deposition temperature and lower sp3/sp2 carbon bonding ratio made lower dielectric constant.

Original languageEnglish
Pages (from-to)558-560
Number of pages3
JournalJournal of the Ceramic Society of Japan
Volume117
Issue number1365
DOIs
Publication statusPublished - 2009 May

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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