Characterization of silicon avalanche photodetectors fabricated in standard CMOS process

Hyo Soon Kang, Myung Jae Lee, Woo Young Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present and characterize silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process. When the bias is above the avalanche breakdown voltage, the device exhibits photodetection frequency response peaking due to resonance caused by appearance of inductive components in avalanche region.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
PublisherOptical Society of America
ISBN (Print)1424411742, 9781424411740
Publication statusPublished - 2007
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 - Seoul, Korea, Republic of
Duration: 2007 Aug 262007 Aug 26

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
CountryKorea, Republic of
CitySeoul
Period07/8/2607/8/26

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Kang, H. S., Lee, M. J., & Choi, W. Y. (2007). Characterization of silicon avalanche photodetectors fabricated in standard CMOS process. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 (Optics InfoBase Conference Papers). Optical Society of America.