Characterization of silicon avalanche photodetectors fabricated in standard CMOS process

Hyo Soon Kang, Myung Jae Lee, Woo Young Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present and characterize silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process. When the bias is above the avalanche breakdown voltage, the device exhibits photodetection frequency response peaking due to resonance caused by appearance of inductive components in avalanche region.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
PublisherOptical Society of America
ISBN (Print)1424411742, 9781424411740
Publication statusPublished - 2007 Jan 1
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 - Seoul, Korea, Republic of
Duration: 2007 Aug 262007 Aug 26

Other

OtherConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
CountryKorea, Republic of
CitySeoul
Period07/8/2607/8/26

Fingerprint

Photodetectors
Electric breakdown
avalanches
Frequency response
photometers
CMOS
Silicon
silicon
Metals
electrical faults
frequency response
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Kang, H. S., Lee, M. J., & Choi, W. Y. (2007). Characterization of silicon avalanche photodetectors fabricated in standard CMOS process. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 Optical Society of America.
Kang, Hyo Soon ; Lee, Myung Jae ; Choi, Woo Young. / Characterization of silicon avalanche photodetectors fabricated in standard CMOS process. Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007. Optical Society of America, 2007.
@inproceedings{c394b7a28374452194d857610cb04253,
title = "Characterization of silicon avalanche photodetectors fabricated in standard CMOS process",
abstract = "We present and characterize silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process. When the bias is above the avalanche breakdown voltage, the device exhibits photodetection frequency response peaking due to resonance caused by appearance of inductive components in avalanche region.",
author = "Kang, {Hyo Soon} and Lee, {Myung Jae} and Choi, {Woo Young}",
year = "2007",
month = "1",
day = "1",
language = "English",
isbn = "1424411742",
booktitle = "Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007",
publisher = "Optical Society of America",

}

Kang, HS, Lee, MJ & Choi, WY 2007, Characterization of silicon avalanche photodetectors fabricated in standard CMOS process. in Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007. Optical Society of America, Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007, Seoul, Korea, Republic of, 07/8/26.

Characterization of silicon avalanche photodetectors fabricated in standard CMOS process. / Kang, Hyo Soon; Lee, Myung Jae; Choi, Woo Young.

Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007. Optical Society of America, 2007.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Characterization of silicon avalanche photodetectors fabricated in standard CMOS process

AU - Kang, Hyo Soon

AU - Lee, Myung Jae

AU - Choi, Woo Young

PY - 2007/1/1

Y1 - 2007/1/1

N2 - We present and characterize silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process. When the bias is above the avalanche breakdown voltage, the device exhibits photodetection frequency response peaking due to resonance caused by appearance of inductive components in avalanche region.

AB - We present and characterize silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process. When the bias is above the avalanche breakdown voltage, the device exhibits photodetection frequency response peaking due to resonance caused by appearance of inductive components in avalanche region.

UR - http://www.scopus.com/inward/record.url?scp=84899088283&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899088283&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1424411742

SN - 9781424411740

BT - Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007

PB - Optical Society of America

ER -

Kang HS, Lee MJ, Choi WY. Characterization of silicon avalanche photodetectors fabricated in standard CMOS process. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007. Optical Society of America. 2007