Characterization of silicon avalanche photodetectors fabricated in standard CMOS process

Hyo Soon Kang, Myung Jae Lee, Woo Young Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present and characterize silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process. When the bias is above the avalanche breakdown voltage, the device exhibits photodetection frequency response peaking due to resonance caused by appearance of inductive components in avalanche region.

Original languageEnglish
Title of host publication2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
DOIs
Publication statusPublished - 2007 Dec 1
Event2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM - Seoul, Korea, Republic of
Duration: 2007 Aug 262007 Aug 31

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Other

Other2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
CountryKorea, Republic of
CitySeoul
Period07/8/2607/8/31

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Kang, H. S., Lee, M. J., & Choi, W. Y. (2007). Characterization of silicon avalanche photodetectors fabricated in standard CMOS process. In 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM [4391724] (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2007.4391724