Characterization of wafer-scale MoS2 and WSe2 2D films by spectroscopic ellipsometry

Mangesh S. Diware, Kyunam Park, Jihun Mun, Han Gyeol Park, Won Chegal, Yong Jai Cho, Hyun Mo Cho, Jusang Park, Hyungjun Kim, Sang Woo Kang, Young Dong Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Here, we present the spectroscopic ellipsometry investigation of synthetically grown wafer-scale two-dimensional (2D) MoS2 and WSe2 films to access quality and thickness uniformity. MoS2 and WSe2 samples were grown by chemical vapor deposition and atomic layer deposition, respectively. Complex dielectric function (ε=ε1+iε2) and thickness information of these 2D films were extracted from the measured data using multilayer optical calculations. Broad spectral range (1.2–6 eV) and multiple angles of incidence were used to reduce correlations among fitting parameter. Lineshape of ε of MoS2 and WSe2 monolayer films are consistent with literature but shows higher values, suggests better quality of our samples. Eight-inch wafer size MoS2 monolayer sample shows ∼ 70% uniformity with an average thickness of 0.65 ± 0.2 nm, and three-layer WSe2 sample of 8 × 1 cm2 area shows ∼ 80% uniformity with an average thickness of 2.5 ± 0.4 nm. Our results will be helpful to accelerate commercialization process of 2D devices.

Original languageEnglish
Pages (from-to)1329-1334
Number of pages6
JournalCurrent Applied Physics
Volume17
Issue number10
DOIs
Publication statusPublished - 2017 Oct 1

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Spectroscopic ellipsometry
ellipsometry
wafers
Monolayers
Optical multilayers
Atomic layer deposition
commercialization
Chemical vapor deposition
atomic layer epitaxy
incidence
vapor deposition

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Diware, M. S., Park, K., Mun, J., Park, H. G., Chegal, W., Cho, Y. J., ... Kim, Y. D. (2017). Characterization of wafer-scale MoS2 and WSe2 2D films by spectroscopic ellipsometry. Current Applied Physics, 17(10), 1329-1334. https://doi.org/10.1016/j.cap.2017.07.001
Diware, Mangesh S. ; Park, Kyunam ; Mun, Jihun ; Park, Han Gyeol ; Chegal, Won ; Cho, Yong Jai ; Cho, Hyun Mo ; Park, Jusang ; Kim, Hyungjun ; Kang, Sang Woo ; Kim, Young Dong. / Characterization of wafer-scale MoS2 and WSe2 2D films by spectroscopic ellipsometry. In: Current Applied Physics. 2017 ; Vol. 17, No. 10. pp. 1329-1334.
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Diware, MS, Park, K, Mun, J, Park, HG, Chegal, W, Cho, YJ, Cho, HM, Park, J, Kim, H, Kang, SW & Kim, YD 2017, 'Characterization of wafer-scale MoS2 and WSe2 2D films by spectroscopic ellipsometry', Current Applied Physics, vol. 17, no. 10, pp. 1329-1334. https://doi.org/10.1016/j.cap.2017.07.001

Characterization of wafer-scale MoS2 and WSe2 2D films by spectroscopic ellipsometry. / Diware, Mangesh S.; Park, Kyunam; Mun, Jihun; Park, Han Gyeol; Chegal, Won; Cho, Yong Jai; Cho, Hyun Mo; Park, Jusang; Kim, Hyungjun; Kang, Sang Woo; Kim, Young Dong.

In: Current Applied Physics, Vol. 17, No. 10, 01.10.2017, p. 1329-1334.

Research output: Contribution to journalArticle

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AU - Diware, Mangesh S.

AU - Park, Kyunam

AU - Mun, Jihun

AU - Park, Han Gyeol

AU - Chegal, Won

AU - Cho, Yong Jai

AU - Cho, Hyun Mo

AU - Park, Jusang

AU - Kim, Hyungjun

AU - Kang, Sang Woo

AU - Kim, Young Dong

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N2 - Here, we present the spectroscopic ellipsometry investigation of synthetically grown wafer-scale two-dimensional (2D) MoS2 and WSe2 films to access quality and thickness uniformity. MoS2 and WSe2 samples were grown by chemical vapor deposition and atomic layer deposition, respectively. Complex dielectric function (ε=ε1+iε2) and thickness information of these 2D films were extracted from the measured data using multilayer optical calculations. Broad spectral range (1.2–6 eV) and multiple angles of incidence were used to reduce correlations among fitting parameter. Lineshape of ε of MoS2 and WSe2 monolayer films are consistent with literature but shows higher values, suggests better quality of our samples. Eight-inch wafer size MoS2 monolayer sample shows ∼ 70% uniformity with an average thickness of 0.65 ± 0.2 nm, and three-layer WSe2 sample of 8 × 1 cm2 area shows ∼ 80% uniformity with an average thickness of 2.5 ± 0.4 nm. Our results will be helpful to accelerate commercialization process of 2D devices.

AB - Here, we present the spectroscopic ellipsometry investigation of synthetically grown wafer-scale two-dimensional (2D) MoS2 and WSe2 films to access quality and thickness uniformity. MoS2 and WSe2 samples were grown by chemical vapor deposition and atomic layer deposition, respectively. Complex dielectric function (ε=ε1+iε2) and thickness information of these 2D films were extracted from the measured data using multilayer optical calculations. Broad spectral range (1.2–6 eV) and multiple angles of incidence were used to reduce correlations among fitting parameter. Lineshape of ε of MoS2 and WSe2 monolayer films are consistent with literature but shows higher values, suggests better quality of our samples. Eight-inch wafer size MoS2 monolayer sample shows ∼ 70% uniformity with an average thickness of 0.65 ± 0.2 nm, and three-layer WSe2 sample of 8 × 1 cm2 area shows ∼ 80% uniformity with an average thickness of 2.5 ± 0.4 nm. Our results will be helpful to accelerate commercialization process of 2D devices.

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