Charge-Transfer-Induced p-Type Channel in MoS 2 Flake Field Effect Transistors

Sung Wook Min, Minho Yoon, Sung Jin Yang, Kyeong Rok Ko, Seongil Im

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The two-dimensional transition-metal dichalcogenide semiconductor MoS 2 has received extensive attention for decades because of its outstanding electrical and mechanical properties for next-generation devices. One weakness of MoS 2 , however, is that it shows only n-type conduction, revealing its limitations for homogeneous PN diodes and complementary inverters. Here, we introduce a charge-transfer method to modify the conduction property of MoS 2 from n- to p-type. We initially deposited an n-type InGaZnO (IGZO) film on top of the MoS 2 flake so that electron charges might be transferred from MoS 2 to IGZO during air ambient annealing. As a result, electron charges were depleted in MoS 2 . Such charge depletion lowered the MoS 2 Fermi level, which makes hole conduction favorable in MoS 2 when optimum source/drain electrodes with a high work function are selected. Our IGZO-supported MoS 2 flake field effect transistors (FETs) clearly display channel-type conversion from n- to p-channel in this way. Under short- and long-annealing conditions, n- and p-channel MoS 2 FETs are achieved, respectively, and a low-voltage complementary inverter is demonstrated using both channels in a single MoS 2 flake.

Original languageEnglish
Pages (from-to)4206-4212
Number of pages7
JournalACS Applied Materials and Interfaces
Volume10
Issue number4
DOIs
Publication statusPublished - 2018 Jan 31

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Field effect transistors
Charge transfer
Annealing
Electrons
Fermi level
Transition metals
Diodes
Electric properties
Semiconductor materials
Mechanical properties
Electrodes
Electric potential
Air

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Min, Sung Wook ; Yoon, Minho ; Yang, Sung Jin ; Ko, Kyeong Rok ; Im, Seongil. / Charge-Transfer-Induced p-Type Channel in MoS 2 Flake Field Effect Transistors In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 4. pp. 4206-4212.
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Charge-Transfer-Induced p-Type Channel in MoS 2 Flake Field Effect Transistors . / Min, Sung Wook; Yoon, Minho; Yang, Sung Jin; Ko, Kyeong Rok; Im, Seongil.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 4, 31.01.2018, p. 4206-4212.

Research output: Contribution to journalArticle

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