Charge transfer study of aluminum-based single electron transistors fabricated by using a controlled anodization technique

Ju Jin Kim, Jeong O. Lee, Jinhee Kim, Kyung-hwa Yoo, Jong Wan Park, Jung Bum Choi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have investigated the conduction properties of ultra small aluminum-based single electron transistors which were fabricated by using standard electron beam lithography and a controlled anodization technique. Sharply defined Coulomb-staircases due to single-electron tunneling are observed up to 30 K and the Coulomb blockade persists to temperatures as high as 80 K. Clear periodic and ideal current modulations by gate voltage are also observed up to nearly 25 K. The junction parameters were obtained by fitting the experimental conductance curves to theoretical ones. The determined total capacitance and single electron charging energy are 47 aF and 1.71 meV, respectively. The detailed analysis based on the Orthodox theory shows that asymmetric behaviors of the anodized sample are mainly due to the large anisotropy ratio in the junction resistances, not in the junction capacitances.

Original languageEnglish
Pages (from-to)750-754
Number of pages5
JournalJournal of the Korean Physical Society
Volume33
Issue number6
Publication statusPublished - 1998 Dec 1

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single electron transistors
charge transfer
aluminum
capacitance
stairways
electron tunneling
charging
lithography
electron beams
modulation
conduction
anisotropy
electric potential
curves
electrons
temperature
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, Ju Jin ; Lee, Jeong O. ; Kim, Jinhee ; Yoo, Kyung-hwa ; Park, Jong Wan ; Choi, Jung Bum. / Charge transfer study of aluminum-based single electron transistors fabricated by using a controlled anodization technique. In: Journal of the Korean Physical Society. 1998 ; Vol. 33, No. 6. pp. 750-754.
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Charge transfer study of aluminum-based single electron transistors fabricated by using a controlled anodization technique. / Kim, Ju Jin; Lee, Jeong O.; Kim, Jinhee; Yoo, Kyung-hwa; Park, Jong Wan; Choi, Jung Bum.

In: Journal of the Korean Physical Society, Vol. 33, No. 6, 01.12.1998, p. 750-754.

Research output: Contribution to journalArticle

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AU - Choi, Jung Bum

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AB - We have investigated the conduction properties of ultra small aluminum-based single electron transistors which were fabricated by using standard electron beam lithography and a controlled anodization technique. Sharply defined Coulomb-staircases due to single-electron tunneling are observed up to 30 K and the Coulomb blockade persists to temperatures as high as 80 K. Clear periodic and ideal current modulations by gate voltage are also observed up to nearly 25 K. The junction parameters were obtained by fitting the experimental conductance curves to theoretical ones. The determined total capacitance and single electron charging energy are 47 aF and 1.71 meV, respectively. The detailed analysis based on the Orthodox theory shows that asymmetric behaviors of the anodized sample are mainly due to the large anisotropy ratio in the junction resistances, not in the junction capacitances.

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