Charge Transport in Thick Reduced Graphene Oxide Film

Ho Jong Kim, Daehee Kim, Suyong Jung, Sam Nyung Yi, Yong Ju Yun, Soo Kyung Chang, Dong Han Ha

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We have investigated temperature-dependent charge transport behavior in thick reduced graphene oxide (RGO) film. Our results show that charges transport through two parallel percolating conducting pathways. One contains large disordered regions as one of its constituents, so its conductance is determined dominantly by variable range hopping (VRH). The other is composed of small and medium disordered regions and crystalline sp2 domains, so its conductance is determined by a serial connection of quantum tunneling and thermal activation. The more oxygen functional groups are removed from GO film upon progressive reduction, the lower the potential barriers between the crystalline sp2 domains and disordered regions become. The contribution of thermal activation to total conductance does not appear evidently for highly reduced GO film having low potential barriers, but thermal activation causes the conductance of moderately reduced film to change continuously, even at low temperatures where the VRH is almost frozen out.

Original languageEnglish
Pages (from-to)28685-28690
Number of pages6
JournalJournal of Physical Chemistry C
Volume119
Issue number51
DOIs
Publication statusPublished - 2015 Dec 24

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Charge Transport in Thick Reduced Graphene Oxide Film'. Together they form a unique fingerprint.

  • Cite this

    Kim, H. J., Kim, D., Jung, S., Yi, S. N., Yun, Y. J., Chang, S. K., & Ha, D. H. (2015). Charge Transport in Thick Reduced Graphene Oxide Film. Journal of Physical Chemistry C, 119(51), 28685-28690. https://doi.org/10.1021/acs.jpcc.5b10734