Charge-trap effects of 2D DNA nanostructures implanted in solution-processed InGaZnO thin-film transistor

Keun Woo Lee, Kyung Min Kim, Si Joon Kim, Sreekantha Reddy Dugasani, Junwye Lee, Sung Ha Park, Hyun Jae Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A double crossover (DX) tile-based 2D DNA nanostructure was fabricated and implanted successfully in solution-processed InGaZnO thin film transistor. Observations indicated that the DNA nanostructure plays an important role as a trap charge centre under high electric field in the memory device. At positive gate voltage the memory device with the DNA shows appreciable trapped charge and at negative gate voltage reveals detrapped negative charge characteristics. Consequently, various dimensional DNA nanostructures may play a central role in nanoscale devices and applications in the near future.

Original languageEnglish
Article number215102
JournalJournal of Physics D: Applied Physics
Volume46
Issue number21
DOIs
Publication statusPublished - 2013 May 29

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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