Abstract
A double crossover (DX) tile-based 2D DNA nanostructure was fabricated and implanted successfully in solution-processed InGaZnO thin film transistor. Observations indicated that the DNA nanostructure plays an important role as a trap charge centre under high electric field in the memory device. At positive gate voltage the memory device with the DNA shows appreciable trapped charge and at negative gate voltage reveals detrapped negative charge characteristics. Consequently, various dimensional DNA nanostructures may play a central role in nanoscale devices and applications in the near future.
| Original language | English |
|---|---|
| Article number | 215102 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 46 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 2013 May 29 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
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Charge-trap effects of 2D DNA nanostructures implanted in solution-processed InGaZnO thin-film transistor. / Lee, Keun Woo; Kim, Kyung Min; Kim, Si Joon; Dugasani, Sreekantha Reddy; Lee, Junwye; Park, Sung Ha; Kim, Hyun Jae.
In: Journal of Physics D: Applied Physics, Vol. 46, No. 21, 215102, 29.05.2013.Research output: Contribution to journal › Article
TY - JOUR
T1 - Charge-trap effects of 2D DNA nanostructures implanted in solution-processed InGaZnO thin-film transistor
AU - Lee, Keun Woo
AU - Kim, Kyung Min
AU - Kim, Si Joon
AU - Dugasani, Sreekantha Reddy
AU - Lee, Junwye
AU - Park, Sung Ha
AU - Kim, Hyun Jae
PY - 2013/5/29
Y1 - 2013/5/29
N2 - A double crossover (DX) tile-based 2D DNA nanostructure was fabricated and implanted successfully in solution-processed InGaZnO thin film transistor. Observations indicated that the DNA nanostructure plays an important role as a trap charge centre under high electric field in the memory device. At positive gate voltage the memory device with the DNA shows appreciable trapped charge and at negative gate voltage reveals detrapped negative charge characteristics. Consequently, various dimensional DNA nanostructures may play a central role in nanoscale devices and applications in the near future.
AB - A double crossover (DX) tile-based 2D DNA nanostructure was fabricated and implanted successfully in solution-processed InGaZnO thin film transistor. Observations indicated that the DNA nanostructure plays an important role as a trap charge centre under high electric field in the memory device. At positive gate voltage the memory device with the DNA shows appreciable trapped charge and at negative gate voltage reveals detrapped negative charge characteristics. Consequently, various dimensional DNA nanostructures may play a central role in nanoscale devices and applications in the near future.
UR - http://www.scopus.com/inward/record.url?scp=84878220955&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84878220955&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/46/21/215102
DO - 10.1088/0022-3727/46/21/215102
M3 - Article
AN - SCOPUS:84878220955
VL - 46
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 21
M1 - 215102
ER -