Charge-trap effects of 2D DNA nanostructures implanted in solution-processed InGaZnO thin-film transistor

Keun Woo Lee; Kyung Min Kim; Si Joon Kim; Sreekantha Reddy Dugasani; Junwye Lee; Sung Ha Park; Hyun Jae Kim

doi:10.1088/0022-3727/46/21/215102

Charge-trap effects of 2D DNA nanostructures implanted in solution-processed InGaZnO thin-film transistor

Keun Woo Lee, Kyung Min Kim, Si Joon Kim, Sreekantha Reddy Dugasani, Junwye Lee, Sung Ha Park, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A double crossover (DX) tile-based 2D DNA nanostructure was fabricated and implanted successfully in solution-processed InGaZnO thin film transistor. Observations indicated that the DNA nanostructure plays an important role as a trap charge centre under high electric field in the memory device. At positive gate voltage the memory device with the DNA shows appreciable trapped charge and at negative gate voltage reveals detrapped negative charge characteristics. Consequently, various dimensional DNA nanostructures may play a central role in nanoscale devices and applications in the near future.

Original language	English
Article number	215102
Journal	Journal of Physics D: Applied Physics
Volume	46
Issue number	21
DOIs	https://doi.org/10.1088/0022-3727/46/21/215102
Publication status	Published - 2013 May 29

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/46/21/215102

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title = "Charge-trap effects of 2D DNA nanostructures implanted in solution-processed InGaZnO thin-film transistor",

abstract = "A double crossover (DX) tile-based 2D DNA nanostructure was fabricated and implanted successfully in solution-processed InGaZnO thin film transistor. Observations indicated that the DNA nanostructure plays an important role as a trap charge centre under high electric field in the memory device. At positive gate voltage the memory device with the DNA shows appreciable trapped charge and at negative gate voltage reveals detrapped negative charge characteristics. Consequently, various dimensional DNA nanostructures may play a central role in nanoscale devices and applications in the near future.",

author = "Lee, {Keun Woo} and Kim, {Kyung Min} and Kim, {Si Joon} and Dugasani, {Sreekantha Reddy} and Junwye Lee and Park, {Sung Ha} and Kim, {Hyun Jae}",

year = "2013",

month = may,

day = "29",

doi = "10.1088/0022-3727/46/21/215102",

language = "English",

volume = "46",

journal = "Journal Physics D: Applied Physics",

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Charge-trap effects of 2D DNA nanostructures implanted in solution-processed InGaZnO thin-film transistor. / Lee, Keun Woo; Kim, Kyung Min; Kim, Si Joon; Dugasani, Sreekantha Reddy; Lee, Junwye; Park, Sung Ha; Kim, Hyun Jae.

In: Journal of Physics D: Applied Physics, Vol. 46, No. 21, 215102, 29.05.2013.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Charge-trap effects of 2D DNA nanostructures implanted in solution-processed InGaZnO thin-film transistor

AU - Lee, Keun Woo

AU - Kim, Kyung Min

AU - Kim, Si Joon

AU - Dugasani, Sreekantha Reddy

AU - Lee, Junwye

AU - Park, Sung Ha

AU - Kim, Hyun Jae

PY - 2013/5/29

Y1 - 2013/5/29

N2 - A double crossover (DX) tile-based 2D DNA nanostructure was fabricated and implanted successfully in solution-processed InGaZnO thin film transistor. Observations indicated that the DNA nanostructure plays an important role as a trap charge centre under high electric field in the memory device. At positive gate voltage the memory device with the DNA shows appreciable trapped charge and at negative gate voltage reveals detrapped negative charge characteristics. Consequently, various dimensional DNA nanostructures may play a central role in nanoscale devices and applications in the near future.

AB - A double crossover (DX) tile-based 2D DNA nanostructure was fabricated and implanted successfully in solution-processed InGaZnO thin film transistor. Observations indicated that the DNA nanostructure plays an important role as a trap charge centre under high electric field in the memory device. At positive gate voltage the memory device with the DNA shows appreciable trapped charge and at negative gate voltage reveals detrapped negative charge characteristics. Consequently, various dimensional DNA nanostructures may play a central role in nanoscale devices and applications in the near future.

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Charge-trap effects of 2D DNA nanostructures implanted in solution-processed InGaZnO thin-film transistor

Abstract

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