Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method

Seoungwoo Kuk, Seokhwan Bang, Inhoe Kim, Sunyeol Jeon, Hyeongtag Jeon, Hyung Ho Park, Ho Jung Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.

Original languageEnglish
Title of host publicationEco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design
Pages689-692
Number of pages4
Volume544-545
Publication statusPublished - 2007 Dec 1
Event8th International Symposium on Eco-Materials Processing and Design, ISEPD-8 - Kitakyushu, Japan
Duration: 2007 Jan 112007 Jan 13

Publication series

NameMaterials Science Forum
Volume544-545
ISSN (Print)0255-5476

Other

Other8th International Symposium on Eco-Materials Processing and Design, ISEPD-8
CountryJapan
CityKitakyushu
Period07/1/1107/1/13

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Deposition rates
chemical properties
Chemical properties
Zinc
Electric properties
Energy gap
zinc
electrical properties
Zinc sulfide
Hydrogen Sulfide
zinc sulfides
hydrogen sulfide
Hall effect
Hydrogen sulfide
Thin film transistors
thin films
Transparency
transistors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kuk, S., Bang, S., Kim, I., Jeon, S., Jeon, H., Park, H. H., & Chang, H. J. (2007). Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method. In Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design (Vol. 544-545, pp. 689-692). (Materials Science Forum; Vol. 544-545).
Kuk, Seoungwoo ; Bang, Seokhwan ; Kim, Inhoe ; Jeon, Sunyeol ; Jeon, Hyeongtag ; Park, Hyung Ho ; Chang, Ho Jung. / Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method. Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design. Vol. 544-545 2007. pp. 689-692 (Materials Science Forum).
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abstract = "ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 {\AA}/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.",
author = "Seoungwoo Kuk and Seokhwan Bang and Inhoe Kim and Sunyeol Jeon and Hyeongtag Jeon and Park, {Hyung Ho} and Chang, {Ho Jung}",
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language = "English",
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Kuk, S, Bang, S, Kim, I, Jeon, S, Jeon, H, Park, HH & Chang, HJ 2007, Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method. in Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design. vol. 544-545, Materials Science Forum, vol. 544-545, pp. 689-692, 8th International Symposium on Eco-Materials Processing and Design, ISEPD-8, Kitakyushu, Japan, 07/1/11.

Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method. / Kuk, Seoungwoo; Bang, Seokhwan; Kim, Inhoe; Jeon, Sunyeol; Jeon, Hyeongtag; Park, Hyung Ho; Chang, Ho Jung.

Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design. Vol. 544-545 2007. p. 689-692 (Materials Science Forum; Vol. 544-545).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.

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Kuk S, Bang S, Kim I, Jeon S, Jeon H, Park HH et al. Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method. In Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design. Vol. 544-545. 2007. p. 689-692. (Materials Science Forum).