TY - GEN
T1 - Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method
AU - Kuk, Seoungwoo
AU - Bang, Seokhwan
AU - Kim, Inhoe
AU - Jeon, Sunyeol
AU - Jeon, Hyeongtag
AU - Park, Hyung Ho
AU - Chang, Ho Jung
PY - 2007
Y1 - 2007
N2 - ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.
AB - ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.
UR - http://www.scopus.com/inward/record.url?scp=38349113840&partnerID=8YFLogxK
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U2 - 10.4028/0-87849-431-6.689
DO - 10.4028/0-87849-431-6.689
M3 - Conference contribution
AN - SCOPUS:38349113840
SN - 0878494316
SN - 9780878494316
T3 - Materials Science Forum
SP - 689
EP - 692
BT - Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design
PB - Trans Tech Publications Ltd
T2 - 8th International Symposium on Eco-Materials Processing and Design, ISEPD-8
Y2 - 11 January 2007 through 13 January 2007
ER -