Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method

Seoungwoo Kuk, Seokhwan Bang, Inhoe Kim, Sunyeol Jeon, Hyeongtag Jeon, Hyung Ho Park, Ho Jung Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.

Original languageEnglish
Title of host publicationEco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design
PublisherTrans Tech Publications Ltd
Pages689-692
Number of pages4
ISBN (Print)0878494316, 9780878494316
DOIs
Publication statusPublished - 2007
Event8th International Symposium on Eco-Materials Processing and Design, ISEPD-8 - Kitakyushu, Japan
Duration: 2007 Jan 112007 Jan 13

Publication series

NameMaterials Science Forum
Volume544-545
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other8th International Symposium on Eco-Materials Processing and Design, ISEPD-8
CountryJapan
CityKitakyushu
Period07/1/1107/1/13

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Chemical and electrical properties of ZnS deposited with DEZ and H <sub>2</sub>S by atomic layer deposition method'. Together they form a unique fingerprint.

  • Cite this

    Kuk, S., Bang, S., Kim, I., Jeon, S., Jeon, H., Park, H. H., & Chang, H. J. (2007). Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method. In Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design (pp. 689-692). (Materials Science Forum; Vol. 544-545). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-431-6.689