Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method

Seoungwoo Kuk; Seokhwan Bang; Inhoe Kim; Sunyeol Jeon; Hyeongtag Jeon; Hyung Ho Park; Ho Jung Chang

doi:10.4028/0-87849-431-6.689

Chemical and electrical properties of ZnS deposited with DEZ and H ₂S by atomic layer deposition method

Seoungwoo Kuk, Seokhwan Bang, Inhoe Kim, Sunyeol Jeon, Hyeongtag Jeon, Hyung Ho Park, Ho Jung Chang

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H₂S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.

Original language	English
Title of host publication	Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design
Publisher	Trans Tech Publications Ltd
Pages	689-692
Number of pages	4
ISBN (Print)	0878494316, 9780878494316
DOIs	https://doi.org/10.4028/0-87849-431-6.689
Publication status	Published - 2007
Event	8th International Symposium on Eco-Materials Processing and Design, ISEPD-8 - Kitakyushu, Japan Duration: 2007 Jan 11 → 2007 Jan 13

Publication series

Name	Materials Science Forum
Volume	544-545
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	8th International Symposium on Eco-Materials Processing and Design, ISEPD-8
Country/Territory	Japan
City	Kitakyushu
Period	07/1/11 → 07/1/13

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/0-87849-431-6.689

Cite this

Kuk, S., Bang, S., Kim, I., Jeon, S., Jeon, H., Park, H. H., & Chang, H. J. (2007). Chemical and electrical properties of ZnS deposited with DEZ and H ₂S by atomic layer deposition method. In Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design (pp. 689-692). (Materials Science Forum; Vol. 544-545). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-431-6.689

Kuk, Seoungwoo ; Bang, Seokhwan ; Kim, Inhoe et al. / Chemical and electrical properties of ZnS deposited with DEZ and H ₂S by atomic layer deposition method. Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design. Trans Tech Publications Ltd, 2007. pp. 689-692 (Materials Science Forum).

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title = "Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method",

abstract = "ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 {\AA}/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.",

author = "Seoungwoo Kuk and Seokhwan Bang and Inhoe Kim and Sunyeol Jeon and Hyeongtag Jeon and Park, {Hyung Ho} and Chang, {Ho Jung}",

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pages = "689--692",

booktitle = "Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design",

note = "8th International Symposium on Eco-Materials Processing and Design, ISEPD-8 ; Conference date: 11-01-2007 Through 13-01-2007",

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Kuk, S, Bang, S, Kim, I, Jeon, S, Jeon, H, Park, HH & Chang, HJ 2007, Chemical and electrical properties of ZnS deposited with DEZ and H ₂S by atomic layer deposition method. in Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design. Materials Science Forum, vol. 544-545, Trans Tech Publications Ltd, pp. 689-692, 8th International Symposium on Eco-Materials Processing and Design, ISEPD-8, Kitakyushu, Japan, 07/1/11. https://doi.org/10.4028/0-87849-431-6.689

Chemical and electrical properties of ZnS deposited with DEZ and H ₂S by atomic layer deposition method. / Kuk, Seoungwoo; Bang, Seokhwan; Kim, Inhoe et al.

Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design. Trans Tech Publications Ltd, 2007. p. 689-692 (Materials Science Forum; Vol. 544-545).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method

AU - Kuk, Seoungwoo

AU - Bang, Seokhwan

AU - Kim, Inhoe

AU - Jeon, Sunyeol

AU - Jeon, Hyeongtag

AU - Park, Hyung Ho

AU - Chang, Ho Jung

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N2 - ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.

AB - ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.

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Kuk S, Bang S, Kim I, Jeon S, Jeon H, Park HH et al. Chemical and electrical properties of ZnS deposited with DEZ and H ₂S by atomic layer deposition method. In Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design. Trans Tech Publications Ltd. 2007. p. 689-692. (Materials Science Forum). doi: 10.4028/0-87849-431-6.689