Abstract
ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.
| Original language | English |
|---|---|
| Title of host publication | Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design |
| Pages | 689-692 |
| Number of pages | 4 |
| Volume | 544-545 |
| Publication status | Published - 2007 Dec 1 |
| Event | 8th International Symposium on Eco-Materials Processing and Design, ISEPD-8 - Kitakyushu, Japan Duration: 2007 Jan 11 → 2007 Jan 13 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 544-545 |
| ISSN (Print) | 0255-5476 |
Other
| Other | 8th International Symposium on Eco-Materials Processing and Design, ISEPD-8 |
|---|---|
| Country | Japan |
| City | Kitakyushu |
| Period | 07/1/11 → 07/1/13 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
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Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method. / Kuk, Seoungwoo; Bang, Seokhwan; Kim, Inhoe; Jeon, Sunyeol; Jeon, Hyeongtag; Park, Hyung Ho; Chang, Ho Jung.
Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design. Vol. 544-545 2007. p. 689-692 (Materials Science Forum; Vol. 544-545).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method
AU - Kuk, Seoungwoo
AU - Bang, Seokhwan
AU - Kim, Inhoe
AU - Jeon, Sunyeol
AU - Jeon, Hyeongtag
AU - Park, Hyung Ho
AU - Chang, Ho Jung
PY - 2007/12/1
Y1 - 2007/12/1
N2 - ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.
AB - ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.
UR - http://www.scopus.com/inward/record.url?scp=38349113840&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=38349113840&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:38349113840
SN - 0878494316
SN - 9780878494316
VL - 544-545
T3 - Materials Science Forum
SP - 689
EP - 692
BT - Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design
ER -