The chalcogenide-based phase change memory has been suggested as an alternative non-volatile memory device at the 180 nm technology node. These materials appear to have a reversable phase change between amorphous and crystalline phasees. A sputtered Ge 2Sb 2Te 5 film is deposited on a (100) Si substrate. In order to investigate the crystallization tendency at a certain temperature, we use X-ray diffraction and X-ray photoelectron spectroscopy. The film morphology is observed by using atomic forces microscopy. Grain growth and a phase transition from cubic to hexagonal occurs when the films are heated from 170°C and 380°C, and Ge-Te and Te-Sb bonds increased with annealing.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2004 Jan|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)