Chemical Bonding Characteristics of Ge 2 Sb 2 Te 5 for Thin Films

Min Jung Shin, Doo Jin Choi, Myung Jin Kang, Se Young Choi, In Woo Jang, Kye Nam Lee, Young Jin Park

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34 Citations (Scopus)


The chalcogenide-based phase change memory has been suggested as an alternative non-volatile memory device at the 180 nm technology node. These materials appear to have a reversable phase change between amorphous and crystalline phasees. A sputtered Ge 2 Sb 2 Te 5 film is deposited on a (100) Si substrate. In order to investigate the crystallization tendency at a certain temperature, we use X-ray diffraction and X-ray photoelectron spectroscopy. The film morphology is observed by using atomic forces microscopy. Grain growth and a phase transition from cubic to hexagonal occurs when the films are heated from 170°C and 380°C, and Ge-Te and Te-Sb bonds increased with annealing.

Original languageEnglish
Pages (from-to)10-13
Number of pages4
JournalJournal of the Korean Physical Society
Issue number1
Publication statusPublished - 2004 Jan 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Shin, M. J., Choi, D. J., Kang, M. J., Choi, S. Y., Jang, I. W., Lee, K. N., & Park, Y. J. (2004). Chemical Bonding Characteristics of Ge 2 Sb 2 Te 5 for Thin Films Journal of the Korean Physical Society, 44(1), 10-13.