Abstract
The chalcogenide-based phase change memory has been suggested as an alternative non-volatile memory device at the 180 nm technology node. These materials appear to have a reversable phase change between amorphous and crystalline phasees. A sputtered Ge 2 Sb 2 Te 5 film is deposited on a (100) Si substrate. In order to investigate the crystallization tendency at a certain temperature, we use X-ray diffraction and X-ray photoelectron spectroscopy. The film morphology is observed by using atomic forces microscopy. Grain growth and a phase transition from cubic to hexagonal occurs when the films are heated from 170°C and 380°C, and Ge-Te and Te-Sb bonds increased with annealing.
| Original language | English |
|---|---|
| Pages (from-to) | 10-13 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 44 |
| Issue number | 1 |
| Publication status | Published - 2004 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Chemical Bonding Characteristics of Ge 2 Sb 2 Te 5 for Thin Films . / Shin, Min Jung; Choi, Doo Jin; Kang, Myung Jin; Choi, Se Young; Jang, In Woo; Lee, Kye Nam; Park, Young Jin.
In: Journal of the Korean Physical Society, Vol. 44, No. 1, 01.01.2004, p. 10-13.Research output: Contribution to journal › Article
TY - JOUR
T1 - Chemical Bonding Characteristics of Ge 2 Sb 2 Te 5 for Thin Films
AU - Shin, Min Jung
AU - Choi, Doo Jin
AU - Kang, Myung Jin
AU - Choi, Se Young
AU - Jang, In Woo
AU - Lee, Kye Nam
AU - Park, Young Jin
PY - 2004/1/1
Y1 - 2004/1/1
N2 - The chalcogenide-based phase change memory has been suggested as an alternative non-volatile memory device at the 180 nm technology node. These materials appear to have a reversable phase change between amorphous and crystalline phasees. A sputtered Ge 2 Sb 2 Te 5 film is deposited on a (100) Si substrate. In order to investigate the crystallization tendency at a certain temperature, we use X-ray diffraction and X-ray photoelectron spectroscopy. The film morphology is observed by using atomic forces microscopy. Grain growth and a phase transition from cubic to hexagonal occurs when the films are heated from 170°C and 380°C, and Ge-Te and Te-Sb bonds increased with annealing.
AB - The chalcogenide-based phase change memory has been suggested as an alternative non-volatile memory device at the 180 nm technology node. These materials appear to have a reversable phase change between amorphous and crystalline phasees. A sputtered Ge 2 Sb 2 Te 5 film is deposited on a (100) Si substrate. In order to investigate the crystallization tendency at a certain temperature, we use X-ray diffraction and X-ray photoelectron spectroscopy. The film morphology is observed by using atomic forces microscopy. Grain growth and a phase transition from cubic to hexagonal occurs when the films are heated from 170°C and 380°C, and Ge-Te and Te-Sb bonds increased with annealing.
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M3 - Article
VL - 44
SP - 10
EP - 13
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 1
ER -