Chemical Bonding Characteristics of Ge 2 Sb 2 Te 5 for Thin Films

Min Jung Shin, Doo Jin Choi, Myung Jin Kang, Se Young Choi, In Woo Jang, Kye Nam Lee, Young Jin Park

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The chalcogenide-based phase change memory has been suggested as an alternative non-volatile memory device at the 180 nm technology node. These materials appear to have a reversable phase change between amorphous and crystalline phasees. A sputtered Ge 2 Sb 2 Te 5 film is deposited on a (100) Si substrate. In order to investigate the crystallization tendency at a certain temperature, we use X-ray diffraction and X-ray photoelectron spectroscopy. The film morphology is observed by using atomic forces microscopy. Grain growth and a phase transition from cubic to hexagonal occurs when the films are heated from 170°C and 380°C, and Ge-Te and Te-Sb bonds increased with annealing.

Original languageEnglish
Pages (from-to)10-13
Number of pages4
JournalJournal of the Korean Physical Society
Volume44
Issue number1
Publication statusPublished - 2004 Jan 1

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thin films
tendencies
x rays
photoelectron spectroscopy
atomic force microscopy
crystallization
annealing
diffraction
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Shin, M. J., Choi, D. J., Kang, M. J., Choi, S. Y., Jang, I. W., Lee, K. N., & Park, Y. J. (2004). Chemical Bonding Characteristics of Ge 2 Sb 2 Te 5 for Thin Films Journal of the Korean Physical Society, 44(1), 10-13.
Shin, Min Jung ; Choi, Doo Jin ; Kang, Myung Jin ; Choi, Se Young ; Jang, In Woo ; Lee, Kye Nam ; Park, Young Jin. / Chemical Bonding Characteristics of Ge 2 Sb 2 Te 5 for Thin Films In: Journal of the Korean Physical Society. 2004 ; Vol. 44, No. 1. pp. 10-13.
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Shin, MJ, Choi, DJ, Kang, MJ, Choi, SY, Jang, IW, Lee, KN & Park, YJ 2004, ' Chemical Bonding Characteristics of Ge 2 Sb 2 Te 5 for Thin Films ', Journal of the Korean Physical Society, vol. 44, no. 1, pp. 10-13.

Chemical Bonding Characteristics of Ge 2 Sb 2 Te 5 for Thin Films . / Shin, Min Jung; Choi, Doo Jin; Kang, Myung Jin; Choi, Se Young; Jang, In Woo; Lee, Kye Nam; Park, Young Jin.

In: Journal of the Korean Physical Society, Vol. 44, No. 1, 01.01.2004, p. 10-13.

Research output: Contribution to journalArticle

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AU - Shin, Min Jung

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AU - Choi, Se Young

AU - Jang, In Woo

AU - Lee, Kye Nam

AU - Park, Young Jin

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AB - The chalcogenide-based phase change memory has been suggested as an alternative non-volatile memory device at the 180 nm technology node. These materials appear to have a reversable phase change between amorphous and crystalline phasees. A sputtered Ge 2 Sb 2 Te 5 film is deposited on a (100) Si substrate. In order to investigate the crystallization tendency at a certain temperature, we use X-ray diffraction and X-ray photoelectron spectroscopy. The film morphology is observed by using atomic forces microscopy. Grain growth and a phase transition from cubic to hexagonal occurs when the films are heated from 170°C and 380°C, and Ge-Te and Te-Sb bonds increased with annealing.

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