Abstract
The chalcogenide-based phase change memory has been suggested as an alternative non-volatile memory device at the 180 nm technology node. These materials appear to have a reversable phase change between amorphous and crystalline phasees. A sputtered Ge 2Sb 2Te 5 film is deposited on a (100) Si substrate. In order to investigate the crystallization tendency at a certain temperature, we use X-ray diffraction and X-ray photoelectron spectroscopy. The film morphology is observed by using atomic forces microscopy. Grain growth and a phase transition from cubic to hexagonal occurs when the films are heated from 170°C and 380°C, and Ge-Te and Te-Sb bonds increased with annealing.
Original language | English |
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Pages (from-to) | 10-13 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 44 |
Issue number | 1 |
Publication status | Published - 2004 Jan |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)