Chemical bonding structures of nitrogen within very thin oxynitride films on Si(100) have been investigated by high-resolution photoemission spectroscopy using synchrotron radiation. The oxynitride films nitrided by the rapid thermal process with NO and (formula presented) are systematically compared. Two distinct N (formula presented) components are resolved for both films with a binding-energy difference of 0.61 eV, which are assigned to the N atoms at the interfaces and those in the (formula presented) matrix. Both components are unambiguously attributed to represent a (formula presented) like chemical configuration with three nearest-neighbor Si atoms. The energy shift of 0.61 eV between these components is thought be due to the second-nearest-neighbor effect combined with core-hole screening. The difference between (formula presented)- and NO-nitrided films and the interface suboxide species identified by Si (formula presented) core levels are discussed.
|Number of pages||5|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2002 Jan 1|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics