Chemical configuration of nitrogen in ultrathin Si oxynitride on Si(100)

J. W. Kim, H. W. Yeom, Y. D. Chung, KwangHo Jeong, C. N. Whang, M. K. Lee, H. J. Shin

Research output: Contribution to journalArticle

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Abstract

Chemical bonding structures of nitrogen within very thin oxynitride films on Si(100) have been investigated by high-resolution photoemission spectroscopy using synchrotron radiation. The oxynitride films nitrided by the rapid thermal process with NO and (formula presented) are systematically compared. Two distinct N (formula presented) components are resolved for both films with a binding-energy difference of 0.61 eV, which are assigned to the N atoms at the interfaces and those in the (formula presented) matrix. Both components are unambiguously attributed to represent a (formula presented) like chemical configuration with three nearest-neighbor Si atoms. The energy shift of 0.61 eV between these components is thought be due to the second-nearest-neighbor effect combined with core-hole screening. The difference between (formula presented)- and NO-nitrided films and the interface suboxide species identified by Si (formula presented) core levels are discussed.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number3
DOIs
Publication statusPublished - 2002 Jan 1

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oxynitrides
Nitrogen
nitrogen
configurations
Atoms
Core levels
Photoelectron spectroscopy
Synchrotron radiation
Binding energy
Screening
Thin films
atoms
synchrotron radiation
photoelectric emission
screening
binding energy
shift
high resolution
matrices
spectroscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kim, J. W. ; Yeom, H. W. ; Chung, Y. D. ; Jeong, KwangHo ; Whang, C. N. ; Lee, M. K. ; Shin, H. J. / Chemical configuration of nitrogen in ultrathin Si oxynitride on Si(100). In: Physical Review B - Condensed Matter and Materials Physics. 2002 ; Vol. 66, No. 3. pp. 1-5.
@article{ad8baa0615c745e48eba6fab52d7bb9a,
title = "Chemical configuration of nitrogen in ultrathin Si oxynitride on Si(100)",
abstract = "Chemical bonding structures of nitrogen within very thin oxynitride films on Si(100) have been investigated by high-resolution photoemission spectroscopy using synchrotron radiation. The oxynitride films nitrided by the rapid thermal process with NO and (formula presented) are systematically compared. Two distinct N (formula presented) components are resolved for both films with a binding-energy difference of 0.61 eV, which are assigned to the N atoms at the interfaces and those in the (formula presented) matrix. Both components are unambiguously attributed to represent a (formula presented) like chemical configuration with three nearest-neighbor Si atoms. The energy shift of 0.61 eV between these components is thought be due to the second-nearest-neighbor effect combined with core-hole screening. The difference between (formula presented)- and NO-nitrided films and the interface suboxide species identified by Si (formula presented) core levels are discussed.",
author = "Kim, {J. W.} and Yeom, {H. W.} and Chung, {Y. D.} and KwangHo Jeong and Whang, {C. N.} and Lee, {M. K.} and Shin, {H. J.}",
year = "2002",
month = "1",
day = "1",
doi = "10.1103/PhysRevB.66.035312",
language = "English",
volume = "66",
pages = "1--5",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "3",

}

Chemical configuration of nitrogen in ultrathin Si oxynitride on Si(100). / Kim, J. W.; Yeom, H. W.; Chung, Y. D.; Jeong, KwangHo; Whang, C. N.; Lee, M. K.; Shin, H. J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 66, No. 3, 01.01.2002, p. 1-5.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Chemical configuration of nitrogen in ultrathin Si oxynitride on Si(100)

AU - Kim, J. W.

AU - Yeom, H. W.

AU - Chung, Y. D.

AU - Jeong, KwangHo

AU - Whang, C. N.

AU - Lee, M. K.

AU - Shin, H. J.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Chemical bonding structures of nitrogen within very thin oxynitride films on Si(100) have been investigated by high-resolution photoemission spectroscopy using synchrotron radiation. The oxynitride films nitrided by the rapid thermal process with NO and (formula presented) are systematically compared. Two distinct N (formula presented) components are resolved for both films with a binding-energy difference of 0.61 eV, which are assigned to the N atoms at the interfaces and those in the (formula presented) matrix. Both components are unambiguously attributed to represent a (formula presented) like chemical configuration with three nearest-neighbor Si atoms. The energy shift of 0.61 eV between these components is thought be due to the second-nearest-neighbor effect combined with core-hole screening. The difference between (formula presented)- and NO-nitrided films and the interface suboxide species identified by Si (formula presented) core levels are discussed.

AB - Chemical bonding structures of nitrogen within very thin oxynitride films on Si(100) have been investigated by high-resolution photoemission spectroscopy using synchrotron radiation. The oxynitride films nitrided by the rapid thermal process with NO and (formula presented) are systematically compared. Two distinct N (formula presented) components are resolved for both films with a binding-energy difference of 0.61 eV, which are assigned to the N atoms at the interfaces and those in the (formula presented) matrix. Both components are unambiguously attributed to represent a (formula presented) like chemical configuration with three nearest-neighbor Si atoms. The energy shift of 0.61 eV between these components is thought be due to the second-nearest-neighbor effect combined with core-hole screening. The difference between (formula presented)- and NO-nitrided films and the interface suboxide species identified by Si (formula presented) core levels are discussed.

UR - http://www.scopus.com/inward/record.url?scp=85038971601&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85038971601&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.66.035312

DO - 10.1103/PhysRevB.66.035312

M3 - Article

VL - 66

SP - 1

EP - 5

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 3

ER -