Chemical configuration of nitrogen in ultrathin Si oxynitride on Si(100)

J. W. Kim, H. W. Yeom, Y. D. Chung, K. Jeong, C. N. Whang, M. K. Lee, H. J. Shin

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1 Citation (Scopus)


Chemical bonding structures of nitrogen within very thin oxynitride films on Si(100) have been investigated by high-resolution photoemission spectroscopy using synchrotron radiation. The oxynitride films nitrided by the rapid thermal process with NO and (formula presented) are systematically compared. Two distinct N (formula presented) components are resolved for both films with a binding-energy difference of 0.61 eV, which are assigned to the N atoms at the interfaces and those in the (formula presented) matrix. Both components are unambiguously attributed to represent a (formula presented) like chemical configuration with three nearest-neighbor Si atoms. The energy shift of 0.61 eV between these components is thought be due to the second-nearest-neighbor effect combined with core-hole screening. The difference between (formula presented)- and NO-nitrided films and the interface suboxide species identified by Si (formula presented) core levels are discussed.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number3
Publication statusPublished - 2002

Bibliographical note

Copyright 2017 Elsevier B.V., All rights reserved.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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