Chemical configuration of nitrogen in ultrathin Si oxynitride on Si(100)

J. W. Kim, H. W. Yeom, Y. D. Chung, K. Jeong, C. N. Whang, M. K. Lee, H. J. Shin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Chemical bonding structures of nitrogen within very thin oxynitride films on Si(100) have been investigated by high-resolution photoemission spectroscopy using synchrotron radiation. The oxynitride films nitrided by the rapid thermal process with NO and (formula presented) are systematically compared. Two distinct N (formula presented) components are resolved for both films with a binding-energy difference of 0.61 eV, which are assigned to the N atoms at the interfaces and those in the (formula presented) matrix. Both components are unambiguously attributed to represent a (formula presented) like chemical configuration with three nearest-neighbor Si atoms. The energy shift of 0.61 eV between these components is thought be due to the second-nearest-neighbor effect combined with core-hole screening. The difference between (formula presented)- and NO-nitrided films and the interface suboxide species identified by Si (formula presented) core levels are discussed.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number3
DOIs
Publication statusPublished - 2002 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Chemical configuration of nitrogen in ultrathin Si oxynitride on Si(100)'. Together they form a unique fingerprint.

  • Cite this