Chemical reaction at the interface between pentacene and HfO2

S. J. Kang, Yeonjin Yi, C. Y. Kim, Kyung-hwa Yoo, A. Moewes, Mann-Ho Cho, J. D. Denlinger, C. N. Whang, G. S. Chang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The electronic structure and the interface formation at the interface region between pentacene and HfO2 are investigated using x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and x-ray emission spectroscopy (XES). The measured C 1s XPS spectra of pentacene indicate that chemical bonding occurs at the interface between pentacene and HfO2. The carbon of pentacene reacts with oxygen belonging to HfO2 and band bending occurs at the interface due to a redistribution of charge. The determined interface dipole and band bending between pentacene and HfO2 are 0.04 and 0.1eV, respectively. The highest occupied molecular orbital (HOMO) level is observed at 0.68eV below the Fermi level. This chemical reaction allows us to grow a pentacene film with large grains onto HfO2. We conclude that high performance pentacene thin film transistors can be obtained by inserting an ultrathin HfO2 layer between pentacene and a gate insulator.

Original languageEnglish
Article number205328
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number20
DOIs
Publication statusPublished - 2005 Nov 15

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Chemical reactions
chemical reactions
Photoelectron spectroscopy
X rays
Ultraviolet photoelectron spectroscopy
photoelectron spectroscopy
x ray spectroscopy
Emission spectroscopy
Molecular orbitals
Thin film transistors
Fermi level
Electronic structure
ultraviolet spectroscopy
Carbon
Oxygen
molecular orbitals
transistors
pentacene
insulators
dipoles

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kang, S. J. ; Yi, Yeonjin ; Kim, C. Y. ; Yoo, Kyung-hwa ; Moewes, A. ; Cho, Mann-Ho ; Denlinger, J. D. ; Whang, C. N. ; Chang, G. S. / Chemical reaction at the interface between pentacene and HfO2. In: Physical Review B - Condensed Matter and Materials Physics. 2005 ; Vol. 72, No. 20.
@article{a2ee180b2f8641a683a519027559d9fd,
title = "Chemical reaction at the interface between pentacene and HfO2",
abstract = "The electronic structure and the interface formation at the interface region between pentacene and HfO2 are investigated using x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and x-ray emission spectroscopy (XES). The measured C 1s XPS spectra of pentacene indicate that chemical bonding occurs at the interface between pentacene and HfO2. The carbon of pentacene reacts with oxygen belonging to HfO2 and band bending occurs at the interface due to a redistribution of charge. The determined interface dipole and band bending between pentacene and HfO2 are 0.04 and 0.1eV, respectively. The highest occupied molecular orbital (HOMO) level is observed at 0.68eV below the Fermi level. This chemical reaction allows us to grow a pentacene film with large grains onto HfO2. We conclude that high performance pentacene thin film transistors can be obtained by inserting an ultrathin HfO2 layer between pentacene and a gate insulator.",
author = "Kang, {S. J.} and Yeonjin Yi and Kim, {C. Y.} and Kyung-hwa Yoo and A. Moewes and Mann-Ho Cho and Denlinger, {J. D.} and Whang, {C. N.} and Chang, {G. S.}",
year = "2005",
month = "11",
day = "15",
doi = "10.1103/PhysRevB.72.205328",
language = "English",
volume = "72",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "20",

}

Chemical reaction at the interface between pentacene and HfO2. / Kang, S. J.; Yi, Yeonjin; Kim, C. Y.; Yoo, Kyung-hwa; Moewes, A.; Cho, Mann-Ho; Denlinger, J. D.; Whang, C. N.; Chang, G. S.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 72, No. 20, 205328, 15.11.2005.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Chemical reaction at the interface between pentacene and HfO2

AU - Kang, S. J.

AU - Yi, Yeonjin

AU - Kim, C. Y.

AU - Yoo, Kyung-hwa

AU - Moewes, A.

AU - Cho, Mann-Ho

AU - Denlinger, J. D.

AU - Whang, C. N.

AU - Chang, G. S.

PY - 2005/11/15

Y1 - 2005/11/15

N2 - The electronic structure and the interface formation at the interface region between pentacene and HfO2 are investigated using x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and x-ray emission spectroscopy (XES). The measured C 1s XPS spectra of pentacene indicate that chemical bonding occurs at the interface between pentacene and HfO2. The carbon of pentacene reacts with oxygen belonging to HfO2 and band bending occurs at the interface due to a redistribution of charge. The determined interface dipole and band bending between pentacene and HfO2 are 0.04 and 0.1eV, respectively. The highest occupied molecular orbital (HOMO) level is observed at 0.68eV below the Fermi level. This chemical reaction allows us to grow a pentacene film with large grains onto HfO2. We conclude that high performance pentacene thin film transistors can be obtained by inserting an ultrathin HfO2 layer between pentacene and a gate insulator.

AB - The electronic structure and the interface formation at the interface region between pentacene and HfO2 are investigated using x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and x-ray emission spectroscopy (XES). The measured C 1s XPS spectra of pentacene indicate that chemical bonding occurs at the interface between pentacene and HfO2. The carbon of pentacene reacts with oxygen belonging to HfO2 and band bending occurs at the interface due to a redistribution of charge. The determined interface dipole and band bending between pentacene and HfO2 are 0.04 and 0.1eV, respectively. The highest occupied molecular orbital (HOMO) level is observed at 0.68eV below the Fermi level. This chemical reaction allows us to grow a pentacene film with large grains onto HfO2. We conclude that high performance pentacene thin film transistors can be obtained by inserting an ultrathin HfO2 layer between pentacene and a gate insulator.

UR - http://www.scopus.com/inward/record.url?scp=29744468771&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29744468771&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.72.205328

DO - 10.1103/PhysRevB.72.205328

M3 - Article

AN - SCOPUS:29744468771

VL - 72

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 20

M1 - 205328

ER -