Chemical stability and electrical performance of dual-active-layered zinc-tin-oxide/indium-gallium-zinc-oxide thin-film transistors using a solution process

Chul Ho Kim, You Seung Rim, Hyun Jae Kim

Research output: Contribution to journalArticle

46 Citations (Scopus)


We investigated the chemical stability and electrical properties of dual-active-layered zinc-tin-oxide (ZTO)/indium-gallium-zinc-oxide (IGZO) structures (DALZI) with the durability of the chemical damage. The IGZO film was easily corroded or removed by an etchant, but the DALZI film was effectively protected by the high chemical stability of ZTO. Furthermore, the electrical performance of the DALZI thin-film transistor (TFT) was improved by densification compared to the IGZO TFT owing to the passivation of the pin holes or pore sites and the increase in the carrier concentration due to the effect of Sn4+ doping.

Original languageEnglish
Pages (from-to)6108-6112
Number of pages5
JournalACS Applied Materials and Interfaces
Issue number13
Publication statusPublished - 2013 Jul 10


All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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