Chemical state analysis of heavily phosphorus-doped epitaxial silicon films grown on Si (1 0 0) by X-ray photoelectron spectroscopy

Engineering & Materials Science

• X ray photoelectron spectroscopy 100%
• Phosphorus 99%
• Binding energy 65%
• Silicon 64%
• Electronegativity 36%
• Core levels 32%
• System-in-package 28%
• Atoms 21%
• Thin films 19%
• Industrial applications 18%
• Substrates 14%

Physics & Astronomy

• silicon films 87%
• phosphorus 79%
• photoelectron spectroscopy 67%
• binding energy 46%
• x rays 36%
• high resolution 33%
• orbitals 19%
• thin films 14%
• atoms 13%

Chemical Compounds

• X-Ray Photoelectron Spectroscopy 57%
• Binding Energy 48%
• Liquid Film 39%
• Core Level 33%
• Electronegativity 29%
• Application 8%