Chemical structure of ultrathin SiO2 film with nitrogen incorporated by remote nitrogen plasma

M. H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, D. H. Ko, J. Y. Yoo, N. I. Lee, K. Fujihara

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The chemical structure of ultrathin SiO2 film, with nitrogen incorporated by remote nitrogen plasma, was discussed. It was found that the nitridation dominantly occurred at the interfacial region as the nitridation temperature increased. The analysis showed that the defect formation due to nitrogen incorporation resulted in a negative shift of the capacitance-voltage curve.

Original languageEnglish
Pages (from-to)1676-1681
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume20
Issue number5
DOIs
Publication statusPublished - 2002 Sep 1

Fingerprint

Nitrogen plasma
Nitridation
nitrogen plasma
Ultrathin films
Nitrogen
nitrogen
Capacitance
capacitance
Defects
shift
defects
Electric potential
electric potential
curves
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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abstract = "The chemical structure of ultrathin SiO2 film, with nitrogen incorporated by remote nitrogen plasma, was discussed. It was found that the nitridation dominantly occurred at the interfacial region as the nitridation temperature increased. The analysis showed that the defect formation due to nitrogen incorporation resulted in a negative shift of the capacitance-voltage curve.",
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Chemical structure of ultrathin SiO2 film with nitrogen incorporated by remote nitrogen plasma. / Cho, M. H.; Roh, Y. S.; Whang, C. N.; Jeong, K.; Ko, D. H.; Yoo, J. Y.; Lee, N. I.; Fujihara, K.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 20, No. 5, 01.09.2002, p. 1676-1681.

Research output: Contribution to journalArticle

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AU - Ko, D. H.

AU - Yoo, J. Y.

AU - Lee, N. I.

AU - Fujihara, K.

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