Chemical structure of ultrathin SiO2 film with nitrogen incorporated by remote nitrogen plasma

M. H. Cho; Y. S. Roh; C. N. Whang; K. Jeong; D. H. Ko; J. Y. Yoo; N. I. Lee; K. Fujihara

doi:10.1116/1.1497991

Chemical structure of ultrathin SiO₂ film with nitrogen incorporated by remote nitrogen plasma

M. H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, D. H. Ko, J. Y. Yoo, N. I. Lee, K. Fujihara

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The chemical structure of ultrathin SiO₂ film, with nitrogen incorporated by remote nitrogen plasma, was discussed. It was found that the nitridation dominantly occurred at the interfacial region as the nitridation temperature increased. The analysis showed that the defect formation due to nitrogen incorporation resulted in a negative shift of the capacitance-voltage curve.

Original language	English
Pages (from-to)	1676-1681
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	20
Issue number	5
DOIs	https://doi.org/10.1116/1.1497991
Publication status	Published - 2002 Sept

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.1497991

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abstract = "The chemical structure of ultrathin SiO2 film, with nitrogen incorporated by remote nitrogen plasma, was discussed. It was found that the nitridation dominantly occurred at the interfacial region as the nitridation temperature increased. The analysis showed that the defect formation due to nitrogen incorporation resulted in a negative shift of the capacitance-voltage curve.",

author = "Cho, {M. H.} and Roh, {Y. S.} and Whang, {C. N.} and K. Jeong and Ko, {D. H.} and Yoo, {J. Y.} and Lee, {N. I.} and K. Fujihara",

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AU - Roh, Y. S.

AU - Whang, C. N.

AU - Jeong, K.

AU - Ko, D. H.

AU - Yoo, J. Y.

AU - Lee, N. I.

AU - Fujihara, K.

PY - 2002/9

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N2 - The chemical structure of ultrathin SiO2 film, with nitrogen incorporated by remote nitrogen plasma, was discussed. It was found that the nitridation dominantly occurred at the interfacial region as the nitridation temperature increased. The analysis showed that the defect formation due to nitrogen incorporation resulted in a negative shift of the capacitance-voltage curve.

AB - The chemical structure of ultrathin SiO2 film, with nitrogen incorporated by remote nitrogen plasma, was discussed. It was found that the nitridation dominantly occurred at the interfacial region as the nitridation temperature increased. The analysis showed that the defect formation due to nitrogen incorporation resulted in a negative shift of the capacitance-voltage curve.

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Chemical structure of ultrathin SiO₂ film with nitrogen incorporated by remote nitrogen plasma

Abstract

All Science Journal Classification (ASJC) codes

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