The chemical structure of ultrathin SiO2 film, with nitrogen incorporated by remote nitrogen plasma, was discussed. It was found that the nitridation dominantly occurred at the interfacial region as the nitridation temperature increased. The analysis showed that the defect formation due to nitrogen incorporation resulted in a negative shift of the capacitance-voltage curve.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2002 Sep 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films