Chemical surface passivation of HfO2 films in a ZnO nanowire transistor

Tae Hyoung Moon, Min Chang Jeong, Byeong Yun Oh, Moon Ho Ham, Min Hong Jeun, Woo Young Lee, Jae Min Myoung

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The effects of different annealing atmospheres on the chemical surface structure of HfO2 gate dielectric layers have been evaluated in terms of the improvement in the transconductance (gm), current on/off ratio (Ion/Ioff), and carrier mobility (μe) of a back-gated ZnO nanowire field-effect transistor (FET). Compared to O 2 and N2 annealed HfO2-gated transistors, the H2 annealed HfO2-gated ZnO nanowire FET exhibited a higher transconductance of 1.77 × 10-7AV-1, on/off current ratio of ∼1.2 × 104, and electron mobility of 11.90cm 2V-1s-1.

Original languageEnglish
Pages (from-to)2116-2121
Number of pages6
JournalNanotechnology
Volume17
Issue number9
DOIs
Publication statusPublished - 2006 May 14

Fingerprint

Transconductance
transconductance
Field effect transistors
Passivation
passivity
Nanowires
Transistors
nanowires
transistors
field effect transistors
Electron mobility
Gate dielectrics
Carrier mobility
carrier mobility
electron mobility
Surface structure
Annealing
Ions
atmospheres
annealing

All Science Journal Classification (ASJC) codes

  • Engineering (miscellaneous)
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Moon, Tae Hyoung ; Jeong, Min Chang ; Oh, Byeong Yun ; Ham, Moon Ho ; Jeun, Min Hong ; Lee, Woo Young ; Myoung, Jae Min. / Chemical surface passivation of HfO2 films in a ZnO nanowire transistor. In: Nanotechnology. 2006 ; Vol. 17, No. 9. pp. 2116-2121.
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Chemical surface passivation of HfO2 films in a ZnO nanowire transistor. / Moon, Tae Hyoung; Jeong, Min Chang; Oh, Byeong Yun; Ham, Moon Ho; Jeun, Min Hong; Lee, Woo Young; Myoung, Jae Min.

In: Nanotechnology, Vol. 17, No. 9, 14.05.2006, p. 2116-2121.

Research output: Contribution to journalArticle

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AU - Lee, Woo Young

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AB - The effects of different annealing atmospheres on the chemical surface structure of HfO2 gate dielectric layers have been evaluated in terms of the improvement in the transconductance (gm), current on/off ratio (Ion/Ioff), and carrier mobility (μe) of a back-gated ZnO nanowire field-effect transistor (FET). Compared to O 2 and N2 annealed HfO2-gated transistors, the H2 annealed HfO2-gated ZnO nanowire FET exhibited a higher transconductance of 1.77 × 10-7AV-1, on/off current ratio of ∼1.2 × 104, and electron mobility of 11.90cm 2V-1s-1.

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