Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor-dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based on C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm2 V-1 s-1 and a maximal mobility of 2.9 cm2 V-1 s-1 with on/off ratios of 107. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C60 on CVD h-BN is mainly responsible for the superior charge transport behavior. We believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.
Bibliographical noteFunding Information:
T.H.L. acknowledges support by a Research Grant from Kwangwoon University in 2016 and support by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2016R1C1B1014935). Y.N. and T.H.L. acknowledge support by the Stanford CIS-FMA and ILJU Foundation. K.K. acknowledges support from the Future-Innovative Research Fund (1.170005.01) of UNIST (Ulsan National Institute of Science & Technology) and the Nano? Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (2009-0082580). H.J.P. and Z.L. acknowledge the support from a National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (2015R1A2A2A01006992). D.S. is grateful for the Ph.D. studentship from the EPSRC-DTP award. L.S. gratefully acknowledges support from the Kodak Graduate Fellowship. E.J.G.S. acknowledges the use of computational resources from the UK national high performance computing service, ARCHER, for which access was obtained via the UKCP consortium and funded by EPSRC Grant EP/K013564/1, and the Extreme Science and Engineering Discovery Environment (XSEDE), supported by National Science Foundation Grants TG-DMR120049 and TGDMR150017. The Queen?s Fellow Award through Startup Grant M8407MPH as well as the Energy PRP funded by Queen?s University Belfast are also acknowledged. X.G. acknowledges support from Bridging Research Interactions through collaboration with the Development Grants in Energy (BRIDGE) program under the SunShot initiative of the U.S. Department of Energy (DOE) program via Contract DE-FOA- 0000654-1588. L.S., X.G., and Z.B. are supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Award Number DE-SC0016523. Portions of this research were performed at the Stanford Synchrotron Radiation Lightsource, a national user facility operated by Stanford University on behalf of the U.S. DOE, Office of Basic Energy Sciences, under Contract DE-AC02-76SF00515.
© 2017 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Chemistry