Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors

Tae Hoon Lee, Kwanpyo Kim, Gwangwoo Kim, Hyo Ju Park, Declan Scullion, Leo Shaw, Myung Gil Kim, Xiaodan Gu, Won Gyu Bae, Elton J.G. Santos, Zonghoon Lee, Hyeon Suk Shin, Yoshio Nishi, Zhenan Bao

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor-dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based on C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm2 V-1 s-1 and a maximal mobility of 2.9 cm2 V-1 s-1 with on/off ratios of 107. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C60 on CVD h-BN is mainly responsible for the superior charge transport behavior. We believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.

Original languageEnglish
Pages (from-to)2341-2347
Number of pages7
JournalChemistry of Materials
Volume29
Issue number5
DOIs
Publication statusPublished - 2017 Mar 14

Fingerprint

Organic field effect transistors
Boron nitride
Vapors
Flexible electronics
Charge transfer
Semiconducting organic compounds
Field effect transistors
Transistors
Grain boundaries
Semiconductor materials
boron nitride
Costs

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Lee, Tae Hoon ; Kim, Kwanpyo ; Kim, Gwangwoo ; Park, Hyo Ju ; Scullion, Declan ; Shaw, Leo ; Kim, Myung Gil ; Gu, Xiaodan ; Bae, Won Gyu ; Santos, Elton J.G. ; Lee, Zonghoon ; Shin, Hyeon Suk ; Nishi, Yoshio ; Bao, Zhenan. / Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors. In: Chemistry of Materials. 2017 ; Vol. 29, No. 5. pp. 2341-2347.
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abstract = "Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor-dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based on C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm2 V-1 s-1 and a maximal mobility of 2.9 cm2 V-1 s-1 with on/off ratios of 107. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C60 on CVD h-BN is mainly responsible for the superior charge transport behavior. We believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.",
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Lee, TH, Kim, K, Kim, G, Park, HJ, Scullion, D, Shaw, L, Kim, MG, Gu, X, Bae, WG, Santos, EJG, Lee, Z, Shin, HS, Nishi, Y & Bao, Z 2017, 'Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors', Chemistry of Materials, vol. 29, no. 5, pp. 2341-2347. https://doi.org/10.1021/acs.chemmater.6b05517

Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors. / Lee, Tae Hoon; Kim, Kwanpyo; Kim, Gwangwoo; Park, Hyo Ju; Scullion, Declan; Shaw, Leo; Kim, Myung Gil; Gu, Xiaodan; Bae, Won Gyu; Santos, Elton J.G.; Lee, Zonghoon; Shin, Hyeon Suk; Nishi, Yoshio; Bao, Zhenan.

In: Chemistry of Materials, Vol. 29, No. 5, 14.03.2017, p. 2341-2347.

Research output: Contribution to journalArticle

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AU - Lee, Tae Hoon

AU - Kim, Kwanpyo

AU - Kim, Gwangwoo

AU - Park, Hyo Ju

AU - Scullion, Declan

AU - Shaw, Leo

AU - Kim, Myung Gil

AU - Gu, Xiaodan

AU - Bae, Won Gyu

AU - Santos, Elton J.G.

AU - Lee, Zonghoon

AU - Shin, Hyeon Suk

AU - Nishi, Yoshio

AU - Bao, Zhenan

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Y1 - 2017/3/14

N2 - Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor-dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based on C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm2 V-1 s-1 and a maximal mobility of 2.9 cm2 V-1 s-1 with on/off ratios of 107. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C60 on CVD h-BN is mainly responsible for the superior charge transport behavior. We believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.

AB - Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor-dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based on C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm2 V-1 s-1 and a maximal mobility of 2.9 cm2 V-1 s-1 with on/off ratios of 107. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C60 on CVD h-BN is mainly responsible for the superior charge transport behavior. We believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.

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