Chemical vapor deposition of copper films: Influence of the seeding layers

Kyoung Ryul Yoon, Seok Kim, Doo Jin Choi, Ki Hwan Kim, Seok Keun Koh

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

The low pressure chemical vapor deposition of Cu was investigated on TiN substrates that had been locally seeded with thin Cu layers. These Cu layers were 5 angstroms, 40 angstroms and 130 angstroms thick and had been produced by PIB (Partially Ionized Beam) deposition. The growth rate and the XRD peak intensity ratio (I(111)/I(200)) of CVD-Cu increased somewhat in the case of Cu seeded TiN/Si substrates compared with as-received TiN/Si substrate. At the deposition temperature of 200 °C, Cu film deposited on the 40 angstroms seeded substrate had the lowest electrical resistivity value, 2.42 μ Ω·cm that is as high as 1.5 times the bulk copper value. In adhesion test, as the seeding thickness increased from 0 angstrom to 130 angstroms, the adhesion strength increased from 21 N to 27 N.

Original languageEnglish
Pages (from-to)225-230
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume427
Publication statusPublished - 1996 Dec 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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