Chemical vapor deposition of copper films

Influence of the seeding layers

Kyoung Ryul Yoon, Seok Kim, Doo Jin Choi, Ki Hwan Kim, Seok Keun Koh

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

The low pressure chemical vapor deposition of Cu was investigated on TiN substrates that had been locally seeded with thin Cu layers. These Cu layers were 5 angstroms, 40 angstroms and 130 angstroms thick and had been produced by PIB (Partially Ionized Beam) deposition. The growth rate and the XRD peak intensity ratio (I(111)/I(200)) of CVD-Cu increased somewhat in the case of Cu seeded TiN/Si substrates compared with as-received TiN/Si substrate. At the deposition temperature of 200 °C, Cu film deposited on the 40 angstroms seeded substrate had the lowest electrical resistivity value, 2.42 μ Ω·cm that is as high as 1.5 times the bulk copper value. In adhesion test, as the seeding thickness increased from 0 angstrom to 130 angstroms, the adhesion strength increased from 21 N to 27 N.

Original languageEnglish
Pages (from-to)225-230
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume427
Publication statusPublished - 1996 Dec 1

Fingerprint

inoculation
Copper
Chemical vapor deposition
vapor deposition
copper
Substrates
adhesion tests
Low pressure chemical vapor deposition
Bond strength (materials)
adhesion
Adhesion
low pressure
electrical resistivity
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Yoon, Kyoung Ryul ; Kim, Seok ; Choi, Doo Jin ; Kim, Ki Hwan ; Koh, Seok Keun. / Chemical vapor deposition of copper films : Influence of the seeding layers. In: Materials Research Society Symposium - Proceedings. 1996 ; Vol. 427. pp. 225-230.
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Chemical vapor deposition of copper films : Influence of the seeding layers. / Yoon, Kyoung Ryul; Kim, Seok; Choi, Doo Jin; Kim, Ki Hwan; Koh, Seok Keun.

In: Materials Research Society Symposium - Proceedings, Vol. 427, 01.12.1996, p. 225-230.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Chemical vapor deposition of copper films

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AU - Yoon, Kyoung Ryul

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AU - Kim, Ki Hwan

AU - Koh, Seok Keun

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AB - The low pressure chemical vapor deposition of Cu was investigated on TiN substrates that had been locally seeded with thin Cu layers. These Cu layers were 5 angstroms, 40 angstroms and 130 angstroms thick and had been produced by PIB (Partially Ionized Beam) deposition. The growth rate and the XRD peak intensity ratio (I(111)/I(200)) of CVD-Cu increased somewhat in the case of Cu seeded TiN/Si substrates compared with as-received TiN/Si substrate. At the deposition temperature of 200 °C, Cu film deposited on the 40 angstroms seeded substrate had the lowest electrical resistivity value, 2.42 μ Ω·cm that is as high as 1.5 times the bulk copper value. In adhesion test, as the seeding thickness increased from 0 angstrom to 130 angstroms, the adhesion strength increased from 21 N to 27 N.

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