Abstract
The deposition of MoS2 and TiS2 thin films from the metal-organic precursors Mo(S-t-Bu)4 and Ti(S-t-Bu)4 has been investigated. Stoichiometric films with low levels of oxygen and carbon contaminants can be grown at temperatures between 110 and 350°C and low pressure. The films are amorphous when grown at these low temperatures and have granular morphologies in which the grains are 30-90 nm in diameter, the larger grain sizes being observed at higher deposition temperatures. For the MoS2 deposits, the electrical conductivity was ∼1 Ω-1cm-1. For both precursors, the organic byproducts generated during deposition consist principally of isobutylene and tert-butylthiol; smaller amounts of hydrogen sulfide, isobutane, di-tert-butyl sulfide, and di-tert-butyl disulfide are also generated. A β-hydrogen abstraction/proton-transfer mechanism accounts for the distributions of the organic byproducts seen during the deposition of MoS2 and TiS2 films. Our results differ in some respects from those of a previous study of the deposition of thin films from the titanium thiolate precursor.
| Original language | English |
|---|---|
| Pages (from-to) | 1847-1853 |
| Number of pages | 7 |
| Journal | Chemistry of Materials |
| Volume | 9 |
| Issue number | 8 |
| Publication status | Published - 1997 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Chemical Engineering(all)
- Materials Chemistry
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Chemical Vapor Deposition of MoS2 and TiS2 Films from the Metal-Organic Precursors Mo(S-t-Bu)4 and Ti(S-t-Bu)4. / Cheon, Jinwoo; Gozum, John E.; Girolami, Gregory S.
In: Chemistry of Materials, Vol. 9, No. 8, 01.12.1997, p. 1847-1853.Research output: Contribution to journal › Article
TY - JOUR
T1 - Chemical Vapor Deposition of MoS2 and TiS2 Films from the Metal-Organic Precursors Mo(S-t-Bu)4 and Ti(S-t-Bu)4
AU - Cheon, Jinwoo
AU - Gozum, John E.
AU - Girolami, Gregory S.
PY - 1997/12/1
Y1 - 1997/12/1
N2 - The deposition of MoS2 and TiS2 thin films from the metal-organic precursors Mo(S-t-Bu)4 and Ti(S-t-Bu)4 has been investigated. Stoichiometric films with low levels of oxygen and carbon contaminants can be grown at temperatures between 110 and 350°C and low pressure. The films are amorphous when grown at these low temperatures and have granular morphologies in which the grains are 30-90 nm in diameter, the larger grain sizes being observed at higher deposition temperatures. For the MoS2 deposits, the electrical conductivity was ∼1 Ω-1cm-1. For both precursors, the organic byproducts generated during deposition consist principally of isobutylene and tert-butylthiol; smaller amounts of hydrogen sulfide, isobutane, di-tert-butyl sulfide, and di-tert-butyl disulfide are also generated. A β-hydrogen abstraction/proton-transfer mechanism accounts for the distributions of the organic byproducts seen during the deposition of MoS2 and TiS2 films. Our results differ in some respects from those of a previous study of the deposition of thin films from the titanium thiolate precursor.
AB - The deposition of MoS2 and TiS2 thin films from the metal-organic precursors Mo(S-t-Bu)4 and Ti(S-t-Bu)4 has been investigated. Stoichiometric films with low levels of oxygen and carbon contaminants can be grown at temperatures between 110 and 350°C and low pressure. The films are amorphous when grown at these low temperatures and have granular morphologies in which the grains are 30-90 nm in diameter, the larger grain sizes being observed at higher deposition temperatures. For the MoS2 deposits, the electrical conductivity was ∼1 Ω-1cm-1. For both precursors, the organic byproducts generated during deposition consist principally of isobutylene and tert-butylthiol; smaller amounts of hydrogen sulfide, isobutane, di-tert-butyl sulfide, and di-tert-butyl disulfide are also generated. A β-hydrogen abstraction/proton-transfer mechanism accounts for the distributions of the organic byproducts seen during the deposition of MoS2 and TiS2 films. Our results differ in some respects from those of a previous study of the deposition of thin films from the titanium thiolate precursor.
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M3 - Article
AN - SCOPUS:0000359939
VL - 9
SP - 1847
EP - 1853
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 8
ER -