Chemical Vapor Deposition of MoS2 and TiS2 Films from the Metal-Organic Precursors Mo(S-t-Bu)4 and Ti(S-t-Bu)4

Jinwoo Cheon, John E. Gozum, Gregory S. Girolami

Research output: Contribution to journalArticle

77 Citations (Scopus)

Abstract

The deposition of MoS2 and TiS2 thin films from the metal-organic precursors Mo(S-t-Bu)4 and Ti(S-t-Bu)4 has been investigated. Stoichiometric films with low levels of oxygen and carbon contaminants can be grown at temperatures between 110 and 350°C and low pressure. The films are amorphous when grown at these low temperatures and have granular morphologies in which the grains are 30-90 nm in diameter, the larger grain sizes being observed at higher deposition temperatures. For the MoS2 deposits, the electrical conductivity was ∼1 Ω-1cm-1. For both precursors, the organic byproducts generated during deposition consist principally of isobutylene and tert-butylthiol; smaller amounts of hydrogen sulfide, isobutane, di-tert-butyl sulfide, and di-tert-butyl disulfide are also generated. A β-hydrogen abstraction/proton-transfer mechanism accounts for the distributions of the organic byproducts seen during the deposition of MoS2 and TiS2 films. Our results differ in some respects from those of a previous study of the deposition of thin films from the titanium thiolate precursor.

Original languageEnglish
Pages (from-to)1847-1853
Number of pages7
JournalChemistry of Materials
Volume9
Issue number8
Publication statusPublished - 1997 Dec 1

Fingerprint

Chemical vapor deposition
Metals
Byproducts
Butanes
Thin films
Hydrogen Sulfide
Proton transfer
Hydrogen sulfide
Sulfides
Amorphous films
Titanium
Disulfides
Temperature
Hydrogen
Carbon
Deposits
Impurities
Oxygen

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

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abstract = "The deposition of MoS2 and TiS2 thin films from the metal-organic precursors Mo(S-t-Bu)4 and Ti(S-t-Bu)4 has been investigated. Stoichiometric films with low levels of oxygen and carbon contaminants can be grown at temperatures between 110 and 350°C and low pressure. The films are amorphous when grown at these low temperatures and have granular morphologies in which the grains are 30-90 nm in diameter, the larger grain sizes being observed at higher deposition temperatures. For the MoS2 deposits, the electrical conductivity was ∼1 Ω-1cm-1. For both precursors, the organic byproducts generated during deposition consist principally of isobutylene and tert-butylthiol; smaller amounts of hydrogen sulfide, isobutane, di-tert-butyl sulfide, and di-tert-butyl disulfide are also generated. A β-hydrogen abstraction/proton-transfer mechanism accounts for the distributions of the organic byproducts seen during the deposition of MoS2 and TiS2 films. Our results differ in some respects from those of a previous study of the deposition of thin films from the titanium thiolate precursor.",
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Chemical Vapor Deposition of MoS2 and TiS2 Films from the Metal-Organic Precursors Mo(S-t-Bu)4 and Ti(S-t-Bu)4 . / Cheon, Jinwoo; Gozum, John E.; Girolami, Gregory S.

In: Chemistry of Materials, Vol. 9, No. 8, 01.12.1997, p. 1847-1853.

Research output: Contribution to journalArticle

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