Chemically cross-linked thin poly(vinylidene fluoride-cotrifluoroethylene) films for nonvolatile ferroelectric polymer memory

Yu Jin Shin, Seok Ju Kang, Hee Joon Jung, Youn Jung Park, Insung Bae, Dong Hoon Choi, Cheolmin Park

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Both chemically and electrically robust ferroelectric poly(vinylidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) films were developed by spin-coating and subsequent thermal annealing with the thermal cross-linking agent 2,4,4-trimethyl-1,6-hexanediamine (THDA). Well-defined ferroelectric β crystalline domains were developed with THDA up to approximately 50 wt %, with respect to polymer concentration, resulting in characteristic ferroelectric hysteresis polarization-voltage loops in metal/cross-linked ferroelectric layer/metal capacitors with remnant polarization of approximately 4 μC/cm2. Our chemically networked film allowed for facile stacking of a solution-processable organic semiconductor on top of the film, leading to a bottom-gate ferroelectric field effect transistor (FeFET). A low-voltage operating FeFET was realized with a networked PVDF-TrFE film, which had significantly reduced gate leakage current between the drain and gate electrodes. A solution-processed single crystalline tri-isopropylsilylethynyl pentacene FeFET with a chemically cross-linked PVDF-TrFE film showed reliable I-V hysteresis with source-drain ON/OFF current bistablility of 1 × 103 at a sweeping gate voltage of ±20 V. Furthermore, both thermal micro/nanoimprinting and transfer printing techniques were conveniently combined for micro/nanopatterning of chemically resistant cross-linked PVDF-TrFE films.

Original languageEnglish
Pages (from-to)582-589
Number of pages8
JournalACS Applied Materials and Interfaces
Volume3
Issue number2
DOIs
Publication statusPublished - 2011 Feb 23

Fingerprint

Ferroelectric materials
Polymers
1,6-diaminohexane
Data storage equipment
Ethylene
Field effect transistors
Hysteresis
Electric potential
Metals
Polarization
Crystalline materials
Semiconducting organic compounds
Spin coating
polyvinylidene fluoride
Leakage currents
Printing
Capacitors
Annealing
Electrodes
ethylene

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Shin, Yu Jin ; Kang, Seok Ju ; Jung, Hee Joon ; Park, Youn Jung ; Bae, Insung ; Choi, Dong Hoon ; Park, Cheolmin. / Chemically cross-linked thin poly(vinylidene fluoride-cotrifluoroethylene) films for nonvolatile ferroelectric polymer memory. In: ACS Applied Materials and Interfaces. 2011 ; Vol. 3, No. 2. pp. 582-589.
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Chemically cross-linked thin poly(vinylidene fluoride-cotrifluoroethylene) films for nonvolatile ferroelectric polymer memory. / Shin, Yu Jin; Kang, Seok Ju; Jung, Hee Joon; Park, Youn Jung; Bae, Insung; Choi, Dong Hoon; Park, Cheolmin.

In: ACS Applied Materials and Interfaces, Vol. 3, No. 2, 23.02.2011, p. 582-589.

Research output: Contribution to journalArticle

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