Chemically tunable ultrathin silsesquiazane interlayer for n-type and p-type organic transistors on flexible plastic

Wi Hyoung Lee, Seung Goo Lee, Young Je Kwark, Dong Ryeol Lee, Shichoon Lee, Jeong Ho Cho

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In organic field-effect transistors (OFETs), surface modification of the gate-dielectric is a critical technique for enhancing the electrical properties of the device. Here, we report a simple and versatile method for fabricating an ultrathin cross-linked interlayer (thickness ∼3 nm) on an oxide gate dielectric by using polymeric silsesquiazane (SSQZ). The fabricated siloxane film exhibited an ultrasmooth surface with minimal hydroxyl groups; the properties of the surface were chemically tuned by introducing phenyl and phenyl/fluorine pendent groups into the SSQZ. The growth characteristics of two semiconductors-pentacene (p-type) and N,N′-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13, n-type)-on this ultrathin film were systematically investigated according to the type of pendent groups in the SSQZ-treated gate dielectric. Pentacene films on phenyl/fluorine groups exhibited large grains and excellent crystalline homogeneity. By contrast, PTCDI-C13 films exhibited greater crystalline order and perfectness when deposited on phenyl groups rather than on phenyl/fluorine groups. These microstructural characteristics of the organic semiconductors, as well as the dipole moment of the pendent groups, determined the electrical properties of FETs based on pentacene or PTCDI-C13. Importantly, compared to FETs in which the gate dielectric was treated with a silane-coupling agent (a commonly used surface treatment), the FETs fabricated using the tunable SSQZ treatment showed much higher field-effect mobilities. Finally, surface treatment with an ultrathin SSQZ layer was also utilized to fabricate flexible OFETs on a plastic substrate. This was facilitated by the facile SSQZ deposition process and the compatibility of SSQZ with the plastic substrate.

Original languageEnglish
Pages (from-to)22807-22814
Number of pages8
JournalACS Applied Materials and Interfaces
Volume6
Issue number24
DOIs
Publication statusPublished - 2014 Dec 24

Fingerprint

Gate dielectrics
Fluorine
Transistors
Field effect transistors
Plastics
Surface treatment
Organic field effect transistors
Electric properties
Perylene
Siloxanes
Crystalline materials
Silanes
Semiconducting organic compounds
Ultrathin films
Coupling agents
Dipole moment
Substrates
Hydroxyl Radical
Oxides
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Lee, Wi Hyoung ; Lee, Seung Goo ; Kwark, Young Je ; Lee, Dong Ryeol ; Lee, Shichoon ; Cho, Jeong Ho. / Chemically tunable ultrathin silsesquiazane interlayer for n-type and p-type organic transistors on flexible plastic. In: ACS Applied Materials and Interfaces. 2014 ; Vol. 6, No. 24. pp. 22807-22814.
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abstract = "In organic field-effect transistors (OFETs), surface modification of the gate-dielectric is a critical technique for enhancing the electrical properties of the device. Here, we report a simple and versatile method for fabricating an ultrathin cross-linked interlayer (thickness ∼3 nm) on an oxide gate dielectric by using polymeric silsesquiazane (SSQZ). The fabricated siloxane film exhibited an ultrasmooth surface with minimal hydroxyl groups; the properties of the surface were chemically tuned by introducing phenyl and phenyl/fluorine pendent groups into the SSQZ. The growth characteristics of two semiconductors-pentacene (p-type) and N,N′-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13, n-type)-on this ultrathin film were systematically investigated according to the type of pendent groups in the SSQZ-treated gate dielectric. Pentacene films on phenyl/fluorine groups exhibited large grains and excellent crystalline homogeneity. By contrast, PTCDI-C13 films exhibited greater crystalline order and perfectness when deposited on phenyl groups rather than on phenyl/fluorine groups. These microstructural characteristics of the organic semiconductors, as well as the dipole moment of the pendent groups, determined the electrical properties of FETs based on pentacene or PTCDI-C13. Importantly, compared to FETs in which the gate dielectric was treated with a silane-coupling agent (a commonly used surface treatment), the FETs fabricated using the tunable SSQZ treatment showed much higher field-effect mobilities. Finally, surface treatment with an ultrathin SSQZ layer was also utilized to fabricate flexible OFETs on a plastic substrate. This was facilitated by the facile SSQZ deposition process and the compatibility of SSQZ with the plastic substrate.",
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Chemically tunable ultrathin silsesquiazane interlayer for n-type and p-type organic transistors on flexible plastic. / Lee, Wi Hyoung; Lee, Seung Goo; Kwark, Young Je; Lee, Dong Ryeol; Lee, Shichoon; Cho, Jeong Ho.

In: ACS Applied Materials and Interfaces, Vol. 6, No. 24, 24.12.2014, p. 22807-22814.

Research output: Contribution to journalArticle

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