Clarification of electronic and thermal transport properties of Pb-, Ag-, and Cu-doped p-type Bi 0.52 Sb 1.48 Te 3

Kwanlae Kim, Gwansik Kim, Sang Il Kim, Kyu Hyoung Lee, Wooyoung Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The feasibility of using Bi 2 Te 3 -based alloys in low-grade heat thermoelectric power generation has been intensively investigated via a substitutional doping approach over the last decade. However, the comprehensive and quantitative understanding of the electronic and thermal transport parameters of doped Bi 2 Te 3 -based alloys including their carrier concentration (n c ), carrier mobility (μ Hall ), density of state (DOS) effective mass (m d ), and electronic (κ ele ), lattice (κ lat ), and bipolar thermal (κ bp ) conductivities is still elusive. The understanding of these parameters is a prerequisite for designing the modules for real-time applications. In this study, we investigated the effect of Pb, Ag, and Cu doping on the thermoelectric transport parameters of p-type Bi 0.52 Sb 1.48 Te 3 (BST) both theoretically and experimentally. The thermoelectric transport properties of BST and their temperature dependences could be systematically tuned in a low-temperature range by controlled doping of Pb, Ag, and Cu mainly because of the increased concentration of the majority hole carriers. In addition, a zT value of 1 could be obtained over the wide temperature range of 300–400 K by optimizing the doping elements and contents because of the synergetic effect of the suppression of bipolar conduction at higher temperatures and the gradual increase in m d with the doping content at n c < 10 20 cm −3 .

Original languageEnglish
Pages (from-to)593-602
Number of pages10
JournalJournal of Alloys and Compounds
Volume772
DOIs
Publication statusPublished - 2019 Jan 25

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Transport properties
Doping (additives)
Temperature
Carrier mobility
Thermoelectric power
Chemical elements
Power generation
Carrier concentration
Thermal conductivity
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Clarification of electronic and thermal transport properties of Pb-, Ag-, and Cu-doped p-type Bi 0.52 Sb 1.48 Te 3",
abstract = "The feasibility of using Bi 2 Te 3 -based alloys in low-grade heat thermoelectric power generation has been intensively investigated via a substitutional doping approach over the last decade. However, the comprehensive and quantitative understanding of the electronic and thermal transport parameters of doped Bi 2 Te 3 -based alloys including their carrier concentration (n c ), carrier mobility (μ Hall ), density of state (DOS) effective mass (m d ∗ ), and electronic (κ ele ), lattice (κ lat ), and bipolar thermal (κ bp ) conductivities is still elusive. The understanding of these parameters is a prerequisite for designing the modules for real-time applications. In this study, we investigated the effect of Pb, Ag, and Cu doping on the thermoelectric transport parameters of p-type Bi 0.52 Sb 1.48 Te 3 (BST) both theoretically and experimentally. The thermoelectric transport properties of BST and their temperature dependences could be systematically tuned in a low-temperature range by controlled doping of Pb, Ag, and Cu mainly because of the increased concentration of the majority hole carriers. In addition, a zT value of 1 could be obtained over the wide temperature range of 300–400 K by optimizing the doping elements and contents because of the synergetic effect of the suppression of bipolar conduction at higher temperatures and the gradual increase in m d ∗ with the doping content at n c < 10 20 cm −3 .",
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Clarification of electronic and thermal transport properties of Pb-, Ag-, and Cu-doped p-type Bi 0.52 Sb 1.48 Te 3 . / Kim, Kwanlae; Kim, Gwansik; Kim, Sang Il; Lee, Kyu Hyoung; Lee, Wooyoung.

In: Journal of Alloys and Compounds, Vol. 772, 25.01.2019, p. 593-602.

Research output: Contribution to journalArticle

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AU - Lee, Wooyoung

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