Abstract
The feasibility of using Bi 2 Te 3 -based alloys in low-grade heat thermoelectric power generation has been intensively investigated via a substitutional doping approach over the last decade. However, the comprehensive and quantitative understanding of the electronic and thermal transport parameters of doped Bi 2 Te 3 -based alloys including their carrier concentration (n c ), carrier mobility (μ Hall ), density of state (DOS) effective mass (m d ∗ ), and electronic (κ ele ), lattice (κ lat ), and bipolar thermal (κ bp ) conductivities is still elusive. The understanding of these parameters is a prerequisite for designing the modules for real-time applications. In this study, we investigated the effect of Pb, Ag, and Cu doping on the thermoelectric transport parameters of p-type Bi 0.52 Sb 1.48 Te 3 (BST) both theoretically and experimentally. The thermoelectric transport properties of BST and their temperature dependences could be systematically tuned in a low-temperature range by controlled doping of Pb, Ag, and Cu mainly because of the increased concentration of the majority hole carriers. In addition, a zT value of 1 could be obtained over the wide temperature range of 300–400 K by optimizing the doping elements and contents because of the synergetic effect of the suppression of bipolar conduction at higher temperatures and the gradual increase in m d ∗ with the doping content at n c < 10 20 cm −3 .
| Original language | English |
|---|---|
| Pages (from-to) | 593-602 |
| Number of pages | 10 |
| Journal | Journal of Alloys and Compounds |
| Volume | 772 |
| DOIs | |
| Publication status | Published - 2019 Jan 25 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry
Cite this
}
Clarification of electronic and thermal transport properties of Pb-, Ag-, and Cu-doped p-type Bi 0.52 Sb 1.48 Te 3 . / Kim, Kwanlae; Kim, Gwansik; Kim, Sang Il; Lee, Kyu Hyoung; Lee, Wooyoung.
In: Journal of Alloys and Compounds, Vol. 772, 25.01.2019, p. 593-602.Research output: Contribution to journal › Article
TY - JOUR
T1 - Clarification of electronic and thermal transport properties of Pb-, Ag-, and Cu-doped p-type Bi 0.52 Sb 1.48 Te 3
AU - Kim, Kwanlae
AU - Kim, Gwansik
AU - Kim, Sang Il
AU - Lee, Kyu Hyoung
AU - Lee, Wooyoung
PY - 2019/1/25
Y1 - 2019/1/25
N2 - The feasibility of using Bi 2 Te 3 -based alloys in low-grade heat thermoelectric power generation has been intensively investigated via a substitutional doping approach over the last decade. However, the comprehensive and quantitative understanding of the electronic and thermal transport parameters of doped Bi 2 Te 3 -based alloys including their carrier concentration (n c ), carrier mobility (μ Hall ), density of state (DOS) effective mass (m d ∗ ), and electronic (κ ele ), lattice (κ lat ), and bipolar thermal (κ bp ) conductivities is still elusive. The understanding of these parameters is a prerequisite for designing the modules for real-time applications. In this study, we investigated the effect of Pb, Ag, and Cu doping on the thermoelectric transport parameters of p-type Bi 0.52 Sb 1.48 Te 3 (BST) both theoretically and experimentally. The thermoelectric transport properties of BST and their temperature dependences could be systematically tuned in a low-temperature range by controlled doping of Pb, Ag, and Cu mainly because of the increased concentration of the majority hole carriers. In addition, a zT value of 1 could be obtained over the wide temperature range of 300–400 K by optimizing the doping elements and contents because of the synergetic effect of the suppression of bipolar conduction at higher temperatures and the gradual increase in m d ∗ with the doping content at n c < 10 20 cm −3 .
AB - The feasibility of using Bi 2 Te 3 -based alloys in low-grade heat thermoelectric power generation has been intensively investigated via a substitutional doping approach over the last decade. However, the comprehensive and quantitative understanding of the electronic and thermal transport parameters of doped Bi 2 Te 3 -based alloys including their carrier concentration (n c ), carrier mobility (μ Hall ), density of state (DOS) effective mass (m d ∗ ), and electronic (κ ele ), lattice (κ lat ), and bipolar thermal (κ bp ) conductivities is still elusive. The understanding of these parameters is a prerequisite for designing the modules for real-time applications. In this study, we investigated the effect of Pb, Ag, and Cu doping on the thermoelectric transport parameters of p-type Bi 0.52 Sb 1.48 Te 3 (BST) both theoretically and experimentally. The thermoelectric transport properties of BST and their temperature dependences could be systematically tuned in a low-temperature range by controlled doping of Pb, Ag, and Cu mainly because of the increased concentration of the majority hole carriers. In addition, a zT value of 1 could be obtained over the wide temperature range of 300–400 K by optimizing the doping elements and contents because of the synergetic effect of the suppression of bipolar conduction at higher temperatures and the gradual increase in m d ∗ with the doping content at n c < 10 20 cm −3 .
UR - http://www.scopus.com/inward/record.url?scp=85053513462&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85053513462&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2018.09.099
DO - 10.1016/j.jallcom.2018.09.099
M3 - Article
AN - SCOPUS:85053513462
VL - 772
SP - 593
EP - 602
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
SN - 0925-8388
ER -