We demonstrate herein an effective method of forming a high-quality contact between metal and graphene on a wafer as large as 6 in. This gold-assisted transfer method producing no polymer residue on the graphene surface is introduced, and then the gold film is used directly as an electrode to form the transfer length method pattern for calculating the contact resistance. The graphene surface obtained using the gold-assisted transfer method is clean and uniform without residue or contamination, and its contact resistance is at least 60% lower than that obtained using the conventional poly(methyl methacrylate) assisted transfer method.
Bibliographical noteFunding Information:
This work was partially supported by the Priority Research Centers Program (2009-0093823), the Pioneer Research Center Program (2010-0019313), and the Basic Science Research Program (2013-8-8074) through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)