CMOS band-edge Schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction

Brian E. Cossa, Wei Yip Loh, Jungwoo Oh, Greg Smith, Casey Smith, Hemant Adhikari, Barry Sassman, Srivatsan Parthasarathy, Joel Barnett, Prashant Majhi, Robert M. Wallacea, Jiyoung Kim, Raj Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

We demonstrate for the first time Schottky barrier height (SBH) tuning using interfacial SiO 2/high-κ dipoles resulting in SBH ≤ 0.1 eV from the conduction band-edge (CBE) and SBH ≤ 0.2 eV from the valence band-edge (VBE). The near band-edge electron and hole SBHs have been obtained using a dielectric-dipole mitigated (DDM) scheme with single metal on Si junction. By optimizing the dielectric thickness, we obtained effective dipole modulation to the SBH of +0.5 and -0.3 eV for AlO x/SiO 2 and LaO x/SiO 2, respectively, demonstrating reductions in SBH and contact resistance that are necessary for continued enhanced performance in future technology nodes.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Pages104-105
Number of pages2
Publication statusPublished - 2009 Nov 16
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: 2009 Jun 162009 Jun 18

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2009 Symposium on VLSI Technology, VLSIT 2009
CountryJapan
CityKyoto
Period09/6/1609/6/18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Cossa, B. E., Loh, W. Y., Oh, J., Smith, G., Smith, C., Adhikari, H., Sassman, B., Parthasarathy, S., Barnett, J., Majhi, P., Wallacea, R. M., Kim, J., & Jammy, R. (2009). CMOS band-edge Schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction. In 2009 Symposium on VLSI Technology, VLSIT 2009 (pp. 104-105). [5200650] (Digest of Technical Papers - Symposium on VLSI Technology).