CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICs

Jun Bo Yoon, Yun Seok Choi, Byeong Il Kim, Yunseong Eo, Euisik Yoon

Research output: Contribution to journalArticle

121 Citations (Scopus)

Abstract

Fully CMOS-compatible, highly suspended spiral inductors have been designed and fabricated on standard silicon substrate (1∼30 Ω·cm in resistivity) by surface micromachining technology (no substrate etch involved). The RF characteristics of the fabricated inductors have been measured and their equivalent circuit parameters have been extracted using a conventional lumped-element model. We have achieved a high peak Q-factor of 70 at 6 GHz with inductance of 1.38 nH (at 1 GHz) and a self-resonant frequency of over 20 GHz. To the best of our knowledge, this is the highest Q-factor ever reported on standard silicon substrate. This work has demonstrated that the proposed microelectromechanical systems (MEMS) inductors can be a viable technology option to meet the today's strong demands on high-Q on-chip inductors for multi-GHz silicon RF ICs.

Original languageEnglish
Pages (from-to)591-593
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number10
DOIs
Publication statusPublished - 2002 Oct

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Silicon
Substrates
Surface micromachining
Equivalent circuits
Inductance
MEMS
Natural frequencies

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Yoon, Jun Bo ; Choi, Yun Seok ; Kim, Byeong Il ; Eo, Yunseong ; Yoon, Euisik. / CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICs. In: IEEE Electron Device Letters. 2002 ; Vol. 23, No. 10. pp. 591-593.
@article{c086ce83eb774ff492a799a193e58079,
title = "CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICs",
abstract = "Fully CMOS-compatible, highly suspended spiral inductors have been designed and fabricated on standard silicon substrate (1∼30 Ω·cm in resistivity) by surface micromachining technology (no substrate etch involved). The RF characteristics of the fabricated inductors have been measured and their equivalent circuit parameters have been extracted using a conventional lumped-element model. We have achieved a high peak Q-factor of 70 at 6 GHz with inductance of 1.38 nH (at 1 GHz) and a self-resonant frequency of over 20 GHz. To the best of our knowledge, this is the highest Q-factor ever reported on standard silicon substrate. This work has demonstrated that the proposed microelectromechanical systems (MEMS) inductors can be a viable technology option to meet the today's strong demands on high-Q on-chip inductors for multi-GHz silicon RF ICs.",
author = "Yoon, {Jun Bo} and Choi, {Yun Seok} and Kim, {Byeong Il} and Yunseong Eo and Euisik Yoon",
year = "2002",
month = "10",
doi = "10.1109/LED.2002.803767",
language = "English",
volume = "23",
pages = "591--593",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICs. / Yoon, Jun Bo; Choi, Yun Seok; Kim, Byeong Il; Eo, Yunseong; Yoon, Euisik.

In: IEEE Electron Device Letters, Vol. 23, No. 10, 10.2002, p. 591-593.

Research output: Contribution to journalArticle

TY - JOUR

T1 - CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICs

AU - Yoon, Jun Bo

AU - Choi, Yun Seok

AU - Kim, Byeong Il

AU - Eo, Yunseong

AU - Yoon, Euisik

PY - 2002/10

Y1 - 2002/10

N2 - Fully CMOS-compatible, highly suspended spiral inductors have been designed and fabricated on standard silicon substrate (1∼30 Ω·cm in resistivity) by surface micromachining technology (no substrate etch involved). The RF characteristics of the fabricated inductors have been measured and their equivalent circuit parameters have been extracted using a conventional lumped-element model. We have achieved a high peak Q-factor of 70 at 6 GHz with inductance of 1.38 nH (at 1 GHz) and a self-resonant frequency of over 20 GHz. To the best of our knowledge, this is the highest Q-factor ever reported on standard silicon substrate. This work has demonstrated that the proposed microelectromechanical systems (MEMS) inductors can be a viable technology option to meet the today's strong demands on high-Q on-chip inductors for multi-GHz silicon RF ICs.

AB - Fully CMOS-compatible, highly suspended spiral inductors have been designed and fabricated on standard silicon substrate (1∼30 Ω·cm in resistivity) by surface micromachining technology (no substrate etch involved). The RF characteristics of the fabricated inductors have been measured and their equivalent circuit parameters have been extracted using a conventional lumped-element model. We have achieved a high peak Q-factor of 70 at 6 GHz with inductance of 1.38 nH (at 1 GHz) and a self-resonant frequency of over 20 GHz. To the best of our knowledge, this is the highest Q-factor ever reported on standard silicon substrate. This work has demonstrated that the proposed microelectromechanical systems (MEMS) inductors can be a viable technology option to meet the today's strong demands on high-Q on-chip inductors for multi-GHz silicon RF ICs.

UR - http://www.scopus.com/inward/record.url?scp=0036805474&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036805474&partnerID=8YFLogxK

U2 - 10.1109/LED.2002.803767

DO - 10.1109/LED.2002.803767

M3 - Article

AN - SCOPUS:0036805474

VL - 23

SP - 591

EP - 593

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 10

ER -